SANYO MCH3310 Datasheet
Ordering number : ENN6863
MCH3310
P-Channel Silicon MOSFET
MCH3310
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2167
[MCH3310]
0.3
3
12
0.65
2.0
0.250.25
1.6
2.1
0.15
1 : Gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --6.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W
0.85
0.15
2 : Source
3 : Drain
SANYO : MCPH3
--30 V
±20 V
--1.5 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--0.8A, VGS=--10V 210 270 mΩ
RDS(on)2 ID=--0.4A, VGS=--4V 360 500 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--0.8A 1.0 1.5 S
min typ max
Marking : JK Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3060
No.6863-1/4
MCH3310
Continued from preceding page.
Parameter Symbol Conditions
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 22 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.5A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.5A 0.7 nC
Diode Forward Voltage V
SD
See specified Test Circuit 4 ns
r
See specified Test Circuit 8 ns
f
IS=--1.5A, VGS=0 --0.89 --1.5 V
min typ max
Switching Time Test Circuit
VDD= --15V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --0.8A
RL=18.7Ω
V
OUT
Ratings
Unit
P.G
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--0.2
Drain-to-Source V oltage, V
800
700
600
(on) -- mΩ
500
DS
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
ID= --0.4A
0
0 --1 --2 --3 --4 --5 --6
Gate-to-Source V oltage, V
50Ω
I
-- V
D
DS
--8V
--6V
--5V
--4V
--10V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
DS
RDS(on) -- V
GS
--0.8A
--7 --8 --9 --10
GS
S
V
-- V
GS
-- V
MCH3310
= --3V
IT02742
Ta=25°C
IT02744
I
-- V
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
--1.2
D
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --4.0--3.5--3.0--2.5
D
Gate-to-Source V oltage, V
600
500
(on) -- mΩ
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.4A, V
I
D
I
D
GS
= --0.8A, V
Ta=75°C
GS
GS
--25°C
GS
= --4V
= --10V
Ambient Temperature, Ta -- °C
25°C
-- V
No.6863-2/4
IT02743
IT02745
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