SANYO MCH3309 Datasheet
Ordering number : ENN6910
Preliminary
MCH3309
P-Channel Silicon MOSFET
MCH3309
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
Package Dimensions
unit : mm
2167
[MCH3309]
0.3
3
12
0.65
2.0
0.250.25
1.6
2.1
0.15
1 : Gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --6.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W
0.85
0.15
2 : Source
3 : Drain
SANYO : MCPH3
--20 V
±10 V
--1.5 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.3 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 290 pF
Output Capacitance Coss VDS=--10V, f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--0.8A, VGS=--4V 180 235 mΩ
RDS(on)2 ID=--0.4A, VGS=--2.5V 240 340 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --1 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--0.8A 1.6 2.3 S
min typ max
Marking : JJ Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11801 TS IM TA-3058
No.6910-1/4
MCH3309
Continued from preceding page.
Parameter Symbol Conditions
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 32 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1.5A 0.6 nC
Diode Forward Voltage V
SD
See specified Test Circuit 35 ns
r
See specified Test Circuit 27 ns
f
IS=--1.5A, VGS=0 --0.87 --1.5 V
min typ max
Switching Time Test Circuit
VDD= --10V
V
IN
0V
--4V
PW=10µs
D.C.≤1%
V
IN
G
D
ID= --0.8A
RL=12.5Ω
V
OUT
Ratings
Unit
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
600
P.G
--4.0V
I
D
--3.0V
--2.5V
50Ω
-- V
--2.0V
--6.0V
--0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source V oltage, V
RDS(on) -- V
DS
DS
GS
S
V
MCH3309
= --1.5V
GS
-- V
IT02731
Ta=25°C
I
-- V
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5
D
Gate-to-Source V oltage, V
500
RDS(on) -- Ta
Ta=75°C
--25°C
GS
25°C
GS
-- V
VDS= --10V
IT02732
500
400
(on) -- mΩ
DS
300
ID= --0.4A
200
100
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6
--0.8A
Gate-to-Source V oltage, V
--7 --8 --9 --10
IT02733
-- V
GS
400
(on) -- mΩ
DS
300
= --0.4A, V
I
D
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
= --0.8A, V
I
D
GS
GS
= --2.5V
= --4.0V
Ambient Temperature, Ta -- °C
IT02734
No.6910-2/4
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