SANYO MCH3308 Datasheet
Ordering number : ENN7008
MCH3308
P-Channel Silicon MOSFET
MCH3308
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2167A
[MCH3308]
0.65
2.0
0.3
3
12
0.07
2.1
0.250.25
1.6
0.15
3
1 : Gate
2 : Source
3 : Drain
Specifications
0.85
12
SANYO : MCPH3
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --4 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.8 W
--30 V
±20 V
--1 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--500mA, VGS=--10V 420 550 mΩ
RDS(on)2 ID=--300mA, VGS=--4V 720 1000 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--500mA 0.57 0.82 S
Marking : JH Contin ued on ne xt page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73001 TS IM TA-3226
No.7008-1/4
MCH3308
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 75 pF
Output Capacitance Coss VDS=--10V, f=1MHz 16 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 9 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 12 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1A 2.6 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1A 0.5 nC
Diode Forward Voltage V
SD
See specified Test Circuit 4 ns
r
See specified Test Circuit 4 ns
f
IS=--1A, VGS=0 --0.89 --1.5 V
Switching Time Test Circuit
Ratings
min typ max
Unit
--10V
P.G
--2.0
--1.5
-- A
D
--1.0
Drain Current, I
--0.5
V
0V
PW=10µs
D.C .≤1%
G
50Ω
-- V
VDD= --15V
D
DS
--6V
--5V
ID= --500mA
RL=30Ω
MCH3308
S
V
OUT
--1.4
VDS= --10V
--1.2
I
D
-- V
GS
IN
V
IN
I
D
--10V
--8V
--4V
V
GS
= --3V
--1.0
-- A
D
--0.8
--0.6
--0.4
Drain Current, I
--0.2
Ta=75°C
--25°C
0
0
--0.2
--0.4 --0.6 --0.8 --2.0--1.0 --1.2 --1.4 --1.6 --1.8
Drain-to-Source V oltage, V
1400
1200
ID= --0.3A
1000
(on) -- mΩ
DS
800
600
400
200
Static Drain-to-Source
On-State Resistance, R
0
--1 --2 --3 --4 --6 --7 --8--5 --9 --10
RDS(on) -- V
--0.5A
Gate-to-Source V oltage, V
DS
GS
GS
-- V
-- V
IT03310
Ta=25°C
IT03312
GS
= --4V
GS
25°C
GS
= --10V
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
1200
1000
800
(on) -- mΩ
DS
600
400
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Ta
= --0.3A, V
I
D
= --0.5A, V
I
D
Ambient Temperature, Ta -- °C
-- V
No.7008-2/4
IT03311
IT03313
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