SANYO MCH3306 Datasheet
Ordering number : ENN6900
MCH3306
P-Channel Silicon MOSFET
MCH3306
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
Package Dimensions
unit : mm
2167
[MCH3306]
0.3
3
12
0.65
2.0
0.250.25
1.6
2.1
0.15
1 : Gate
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --8 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W
0.85
0.15
2 : Source
3 : Drain
SANYO : MCPH3
--20 V
±10 V
--2 A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.3 --1.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1A, VGS=--4V 110 145 mΩ
RDS(on)2 ID=--0.5A, VGS=--2.5V 140 200 mΩ
RDS(on)3 ID=--0.1A, VGS=--1.8V 180 260 mΩ
=--1mA, VGS=0 --20 V
VDS=--20V, VGS=0 --10 µA
VGS=±8V, VDS=0 ±10 µA
VDS=--10V, ID=--1A 2.1 3.0 S
min typ max
Marking : JF Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12201 TS IM TA-3149
No.6900-1/4
MCH3306
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 410 pF
Output Capacitance Coss VDS=--10V, f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 40 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 42 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 10 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 1.2 nC
Diode Forward Voltage V
SD
See specified Test Circuit 27 ns
r
See specified Test Circuit 38 ns
f
IS=--2A, VGS=0 --0.88 --1.2 V
min typ max
Switching Time Test Circuit
G
VDD= --10V
ID= --1A
RL=10Ω
D
V
OUT
0V
--4V
PW=10µs
D.C.≤1%
V
IN
V
IN
Ratings
Unit
P.G
--2.0
--2.5V
--1.6
--3.0V
-- A
D
--1.2
--4.0V
--10V
--0.8
Drain Current, I
--0.4
0
0
400
350
50Ω
I
-- V
--0.2
D
--1.8V
--1.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
DS
Drain-to-Source V oltage, V
RDS(on) -- V
S
DS
GS
MCH3306
V
= --1.0V
GS
-- V
IT02753
Ta=25°C
I
-- V
--4.0
VDS= --10V
--3.5
--3.0
-- A
--2.5
D
--2.0
--1.5
Drain Current, I
--1.0
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
D
Gate-to-Source V oltage, V
400
350
RDS(on) -- Ta
Ta=75°C
GS
25°C
--25°C
GS
-- V
IT02754
300
(on) -- mΩ
250
DS
200
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
--1.0A
--0.5A
ID= --0.1A
0 --2 --4 --6 --8 --10
Gate-to-Source V oltage, V
GS
-- V
IT02755
300
(on) -- mΩ
250
DS
200
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
= --0.1A, V
I
D
= --0.5A, V
I
D
= --1.0A, V
I
D
= --1.8V
GS
GS
GS
= --2.5V
= --4.0V
Ambient Temperature, Ta -- °C
IT02756
No.6900-2/4
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