SANYO MCH3302 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6369
MCH3302
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed swithcing.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : JB Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %14–A
PD
Mounted on a ceramic board (900mm2×0.8mm)
D
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01–=
1)no(IDV,Am005–=
2)no(IDV,Am003–=
SD
SD
SD
Package Dimensions
unit:mm
2167
[MCH3302]
0.3
3
12
0.65
2.0
V,Am1–=
0=03–V
SG
V,V03–=
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–5.2–V
D
D
Am005–=076059Sm
V01–=053064mΩ
SG
V4–=086059mΩ
SG
zHM1=f,V01–=09Fp
zHM1=f,V01–=05Fp
zHM1=f,V01–=02Fp
0.250.25
1.6
0.15
0.15
2.1
0.85
nimpytxam
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
03–V
02±V
1–A
1W
˚C
˚C
sgnitaR
tinU
31000TS (KOTO) TA-2454 No.6369-1/4
MCH3302
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
Switching Time Test Circuit
VDD=--15V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=--500mA
RL=30Ω
V
)no(tiucriCtseTdeificepseeS6sn
d
r
)ffo(tiucriCtseTdeificepseeS02sn
d
f
I
V,A1–=
0=9.0–5.1–V
SG
OUT
DS
S
tiucriCtseTdeificepseeS5.9sn
tiucriCtseTdeificepseeS61sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
sgnitaR
nimpytxam
A1–=4Cn
D
A1–=1Cn
D
A1–=1Cn
D
tinU
P.G
--1.6
--1.4
--1.2
–A
--1.0
D
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
1000
900
800
–mΩ
700
600
DS(on)
500
ID=--300mA
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12
50Ω
--10.0V
--0.2
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
--500mA
Gate-to-Source Voltage, V
MCH3302
S
I
-- V
D
--8.0V
DS
--6.0V
--4.0V
--3.5V
--3.0V
VGS=--2.5V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
IT01435
GS
Ta=25°C
--14 --16 --18 --20
–V
GS
IT01437
I
-- V
--2.0
VDS=--10V
--1.8
--1.6
--1.4
–A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --1 --2 --3 --4 --5
D
GS
Gate-to-Source Voltage, VGS–V
1200
1100
1000
900
–mΩ
800
700
DS(on)
600
500
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
- -60
--40 --20 0 20 40 60 80 100 120 160140
RDS(on) -- Ta
GS
=- -300mA, V
I
D
=- -500mA, V
I
D
=- -4V
GS
Ambient Temperature, Ta – ˚C
°C
Ta=--25
75
=- -10V
C
°
25
C
°
IT01436
IT01438
No.6369-2/4
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