Sanyo MCH3211 Specifications

Ordering number : ENN7016

MCH3211

NPN Epitaxial Planar Silicon Transistor

MCH3211

DC / DC Converter Applications

Applications

•

Relay drivers, lamp drivers, motor drivers, strobes.

Package Dimensions

unit : mm

2194A

Features

•

Adoption of MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• Ultraminiature package facilitates miniaturization in

end products. (mounting height : 0.85mm).

• High allowable power dissipation.

Specifications

2.1

0.250.25

1.6

0.65

2.0

0.3

3

[MCH3211]

12

0.07

0.85

0.15

3

1 : Base
2 : Emitter
3 : Collector

12

SANYO : MCPH3

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

Mounted on a ceramic board(600mm2✕0.8mm) 0.8 W

15 V
10 V

5V
3A
5A

600 mA

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 23 pF

Collector-to-Emitter Saturation Voltage

CBO
EBO

FE

VCE(sat)1 IC=1.5A, IB=30mA 100 150 mV
VCE(sat)2 IC=3A, IB=60mA 180 270 mV

VCB=12V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=2V, IC=500mA 600
VCE=2V, IC=500mA 380 MHz

T

min typ max

Marking : CG Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92001 TS IM TA-3359

No.7016-1/4

MCH3211

Continued from preceding page.

Parameter Symbol Conditions

Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=30mA 0.85 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

f

=10µA, IE=0 15 V
=1mA, RBE=∞ 10 V

=10µA, IC=0 5 V
See specified Test Circuit. 30 ns
See specified Test Circuit. 210 ns
See specified Test Circuit. 11 ns

min typ max

Switching Time Test Circuit

I

PW=20µs
D.C.≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

20IB1= --20IB2=IC=1.5A

5

4

-- A
C

3

2

Collector Current, I

1

50Ω

60mA

V

R

I

-- V

C

25mA

40mA

1kΩ

+

220µF 470µF

CE

20mA

15mA

R

L

+

VCC=5VVBE= --5V

I

-- V

10mA

5mA

4mA

5

15mA

20mA

4

-- A
C

25mA

3

C

10mA

CE

8mA

6mA

4mA

3mA

2mA

1mA

2

Collector Current, I

1

2mA

1mA

0

0 0.2 0.4 0.6 0.8 1.0

Collector-to-Emitter Voltage, VCE -- V

6.0

VCE=2V

5.5

5.0

4.5

-- A

4.0

C

3.5

3.0

2.5

2.0

1.5

Collector Current, I

1.0

0.5
0

0

IC -- V

0.2 0.4 0.6 0.8 1.0

BE

Ta=75°C

25°C

Base-to-Emitter V oltage, VBE -- V

IB=0

IT01588 IT01589

--25°C

IT01590

0

0

Collector-to-Emitter Voltage, VCE -- V

10000

7
5

3
2

FE

1000

7
5

3
2

100

7

DC Current Gain, h

5
3

2

10

23 57 23 57 23 57

12 43

hFE -- I

C

Ta=75°C

--25°C

25°C

0.10.01

1.0 10

Collector Current, IC -- A

IB=0

5

VCE=2V

IT01591

No.7016-2/4