SANYO MCH3206 Datasheet
Ordering number : ENN7130
0.3
MCH3206
NPN Silicon Epitaxial Planar Transistor
MCH3206
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit : mm
2194A
Features
•
Adoption of MBIT processes.
•
High current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High speed switching.
•
Ultrasmall package facilitates miniaturization in end
products (0.85mm).
•
High allowable power dissipation.
Specifications
2.1
0.250.25
1.6
0.65
2.0
(Bottom view)
3
[MCH3206]
12
0.07
0.85
0.15
3
12
(Top view)
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Mounted on a ceramic board(600mm2✕0.8mm) 0.8 W
15 V
15 V
5V
3A
5A
600 mA
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 13 pF
CBO
EBO
FE
VCB=12V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=2V, IC=500mA 200 560
VCE=2V, IC=500mA 380 MHz
T
min typ max
Marking : CF Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3369
No.7130-1/4
MCH3206
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=30mA 0.85 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
VCE(sat)1 IC=1.5A, IB=30mA 100 150 mV
VCE(sat)2 IC=3A, IB=60mA 180 270 mV
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
f
=10µA, IE=0 15 V
=1mA, RBE=∞ 15 V
=10µA, IC=0 5 V
See specified Test Circuit. 30 ns
See specified Test Circuit. 210 ns
See specified Test Circuit. 11 ns
min typ max
Switching Time Test Circuit
I
PW=20µs
DC≤1%
B1
I
B2
OUTPUT
Ratings
Unit
INPUT
50Ω
V
R
1kΩ
+
220µF 470µF
IC=20IB1= --20IB2=1.5A
5
4
-- A
C
3
2
Collector Current, I
1
0
0
0.2 0.4 0.6 0.8
60mA
C
40mA
CE
1mA
=0
I
B
I
-- V
Collector-to-Emitter Voltage, VCE -- V
6.0
VCE=2V
5.5
5.0
4.5
-- A
4.0
C
3.5
3.0
2.5
2.0
1.5
Collector Current, I
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
IC -- V
BE
°C
Ta=75
Base-to-Emitter V oltage, VBE -- V
25
R
L
+
VCC=5VVBE= --5V
I
-- V
C
25mA
25mA
20mA
15mA
-- A
C
5
40mA
4
3
10mA
2
5mA
Collector Current, I
1
2mA
0
1.0
IT03982
°C
°C
--25
IT03984
0
1000
7
5
FE
3
2
DC Current Gain, h
100
0.01
2468
Collector-to-Emitter Voltage, VCE -- V
h
Ta=75°C
23 57 23 57 23 57
0.1 1.0 10
Collector Current, IC -- A
FE
25
--25
-- I
°C
°C
CE
C
20mA
15mA
10mA
5mA
1mA
=0
I
B
2mA
10
IT03983
VCE=2V
IT03985
No.7130-2/4
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