SANYO MCH3209, MCH3109 Datasheet
Ordering number : ENN7129
0.3
Preliminary
MCH3109 / MCH3209
PNP / NPN Silicon Epitaxial Planar Transistors
MCH3109 / MCH3209
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit : mm
2194A
Features
•
Adoption of MBIT processes.
•
High current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High-speed switching.
•
Ultrasmall package facilitates miniaturization in end
0.250.25
2.1
1.6
products (0.85mm).
•
High allowable power dissipation.
Specifications ( ) : MCH3109
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Mounted on a ceramic board(600mm2✕0.8mm) 0.8 W
[MCH3109 / MCH3209]
3
12
0.65
2.0
(Bottom view)
0.07
0.85
12
(Top view)
0.15
3
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
(--30)40 V
(--)30 V
(--)5 V
(--)3 A
(--)5 A
(--)600 mA
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=(--)10V, f=1MHz (25)20 pF
Marking : MCH3109 : AJ / MCH3209 : CJ Continued on next page.
CBO
EBO
FE
VCB=(--)30V, IE=0 (--)0.1 µA
VEB=(--)4V, IC=0 (--)0.1 µA
VCE=(--)2V, IC=(--)500mA 200 560
VCE=(--)10V, IC=(--)500mA (380)450 MHz
T
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3372, 3373
No.7129-1/5
MCH3109 / MCH3209
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage 120 180 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)1.5A, IB=(--)30mA (--)0.83 (--)1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
VCE(sat)1 IC=(--)1.5A, IB=(--)30mA
VCE(sat)2 IC=(--)1.5A, IB=(--)750mA (--)105 (--)155 mV
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
f
=(--)10µA, IE=0 (--30)40 V
=(--)1mA, RBE=∞ (--)30 V
=(--)10µA, IC=0 (--)5 V
See specified Test Circuit. (50)30 ns
See specified Test Circuit. (270)300 ns
See specified Test Circuit. (25)15 ns
min typ max
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
OUTPUT
Ratings
(--155) (--230) mV
Unit
INPUT
V
50Ω
R
IC=20IB1= --20IB2=500mA
(For PNP, the polarity is reversed.)
--2.0
40mA
--
--1.6
-- A
C
--1.2
50mA
--
--0.8
Collector Current, I
--0.4
0
0
30mA
--
--200 --400 --600 --800
Collector-to-Emitter Voltage, VCE -- mV
--3.5
--3.0
R
B
+
100µF 470µF
I
-- V
C
20mA
--
IC -- V
CE
BE
VCC=12VVBE= --5V
10mA
--
+
R
L
MCH3109
8mA
--
--6mA
--4mA
2mA
--
I
B
IT03993
MCH3109
VCE= --2V
=0
--1000
2.0
40mA
30mA
1.6
-- A
C
Collector Current, I
1.2
0.8
0.4
50mA
0
0
200 400 600 800
Collector-to-Emitter Voltage, VCE -- mV
3.5
3.0
10mA
20mA
I
-- V
C
8mA
IC -- V
CE
6mA
4mA
2mA
MCH3209
IB=0
1000
IT03994
BE
MCH3209
VCE=2V
--2.5
-- A
C
--2.0
°C
--1.5
Ta=75
--1.0
Collector Current, I
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
Base-to-Emitter V oltage, VBE -- V
2.5
-- A
C
2.0
°C
°C
25
--25
IT03995
1.5
1.0
Collector Current, I
0.5
0
0 0.2 0.4 0.6 0.8 1.21.0
Base-to-Emitter V oltage, VBE -- V
°C
°C
25
Ta=75
°C
--25
IT03996
No.7129-2/5
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