SANYO MCH3106 Datasheet
Ordering number : ENN6861A
MCH3106
PNP Epitaxial Planar Silicon Transistor
MCH3106
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit : mm
2194A
Features
•
Adoption of MBIT processes.
•
Large current capacitance.
•
Low collector-to-emitter saturation voltage.
•
High-speed switching.
•
Ultrasmall package facilicates miniaturization
products (mounting height : 0.85mm).
•
High allowable power dissipation.
in end
2.1
0.250.25
1.6
0.65
2.0
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
CBO
CEO
EBO
C
CP
B
C
Mounted on a ceramic board(600mm2✕0.8mm) 0.9 W
3
0.3
12
[MCH3106]
0.07
0.85
12
(Top view)
0.15
3
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
--15 V
--12 V
--5 V
--3 A
--5 A
--600 mA
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=--10V, f=1MHz 36 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1.5A, IB=--30mA ---110 ---165 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--1.5A, IB=--30mA ---0.85 ---1.2 V
Marking : AF Continued on next page.
CBO
EBO
FE
VCB=--12V, IE=0 --0.1 µA
VEB=--4V, IC=0 ---0.1 µA
VCE=--2V, IC=--500mA 200 560
VCE=--2V, IC=--500mA 280 MHz
T
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20502 TS IM / 22201 TS IM TA-3071
No.6861-1/4
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
Switching Time Test Circuit
I
PW=20µs
D.C.≤1%
B1
I
B2
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE
on
stg
f
OUTPUT
MCH3106
Ratings
min typ max
=--10µA, IE=0 ---15 V
=--1mA, RBE=∞ ---12 V
=--10µA, IC=0 ---5 V
See specified Test Circuit. 30 ns
See specified Test Circuit. 90 ns
See specified Test Circuit. 10 ns
Unit
INPUT
50W
IC=20IB2= --20IB1= --1.5A
--2.0
--1.8
--1.6
-- A
--1.4
C
--1.2
--1.0
--0.8
--0.6
Collector Current, I
--0.4
--0.2
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
--14mA
--16mA
Collector-to-Emitter Voltage, V
--3.5
--3.0
--2.5
-- A
V
R
I
-- V
C
I
-- V
C
1kΩ
+
220µF 470µF
VCC= --5VVBE=5V
CE
--12mA
CE
BE
-- V
C
--2.0
--1.5
--1.0
Collector Current, I
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter V oltage, V
BE
-- V
R
L
+
--10mA
--8mA
--6mA
--4mA
--2mA
IB=0
IT02777
VCE= --2V
IT02779
I
-- V
--200
--180
--160
-- A
--140
C
--120
--100
--80
--60
Collector Current, I
--40
--20
0
0 --1 --2 --3 --4 --5
C
Collector-to-Emitter Voltage, V
1000
7
5
3
2
FE
100
7
5
3
2
10
7
DC Current Gain, h
5
3
2
1.0
23 57
--0.01
h
--0.1
Collector Current, I
CE
--0.8mA
-- I
FE
23 57
CE
C
23 57
--1.0 --10
-- A
C
--0.7mA
--0.6mA
--0.5mA
--0.4mA
--0.3mA
--0.2mA
--0.1mA
IB=0
IT02778
-- V
VCE= --2V
IT02780
No.6861-2/4
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