No. 6903-3/14
LV23000M
Parameter Symbol Conditions
Ratings
Unit
min typ max
[FM Front End Characteristics] : fc = 98 MHz, fm = 1 kHz, 22.5 kHzdev.
3 dB sensitivity 3 dB LS
60 dBµV EMF, referenced to a 22.5 kHz dev. output,
12
dBµV
–3 dB input
EMF
Practical sensitivity QS For a 30 dB signal-to-noise ratio input 12
dBµV
EMF
[FM IF Monaural Characteristics] : fc = 10.7 MHz, fm = 1 kHz, 75 kHzdev.
Demodulator output V
O
100 dBµ V, the pin 12 output 210 330 420 mVrms
Signal-to-noise ratio S/N 100 dBµ V, the pin 12 output 68 75 dB
Total harmonic distortion (mono) THD 100 dBµ V, the pin 12 output 0.3 1.5 %
3 dB sensitivity 3 dB LS
100 dBµ V, referenced to a 75 kHz dev. output, –3 dB input
38 44 dBµV
IF counter sensitivity IF-C3 SDC0 = 1, SDC1 = 0, the pin 18 (DO) output 41 51 61 dBµV
Muting attenuation Mute-Att 100 dBµ V, the pin 12 output 68 dB
[FM IF Stereo Characteristics] : fc = 10.7 MHz, fm = 1 kHz, L+R = 90%, Pilot = 10%
Separation SEP 100 dBµ V, L-mod, Pin 12 output/pin 13 output 28 40 dB
Total harmonic distortion (main) THD 100 dBµ V, main modulation, the pin 12 output 0.5 1.5 %
[AM Characteristics] : fc = 1000 kHz, fm = 1 kHz, 30% mod
Detector output 1 V
O
1 23 dBµ V, the pin 12 output 20 40 80 mVrms
Detector output 2 V
O
2 80 dBµ V, the pin 12 output 60 110 160 mVrms
Signal-to-noise ratio 1 S/N1 23 dBµ V, the pin 12 output 1.5 20 dB
Signal-to-noise ratio 2 S/N2 80 dBµ V, the pin 12 output 47 54 dB
Total harmonic distortion THD 80 dBµ V, the pin 12 output 1.2 3.0 %
IF counter sensitivity IF-C The pin 18 (DO) output 16 26 36 dBµV
AM low cut
LOW-CUT
80 dBµ V, referenced to fm = 1 kHz,
5 8 11 dB
the pin 12 output when fm = 100 Hz.
[Current Drain]
FM tuner block I
CC
FM In FM mode with no input 20 30 40 mA
AM tuner block I
CC
AM In AM mode with no input 10 20 30 mA
PLL block I
DD
fr = 83 MHz, X'tal = 75 kHz, With no input to the tuner block
1 2 5 mA
[PLL Characteristics]
Built-in feedback resistor Rf XIN 8 MΩ
Built-in output resistor Rd XOUT 250 kΩ
Hysteresis V
HIS
CE, CL, DI 0.1V
DD
V
High-level output voltage V
OH
PD: IO= –1 mA VDD– 1.0 V
V
OL
1 PD: IO= 1 mA 1.0 V
V
OL
2 BO1, BO2: IO= 1 mA 0.25 V
Low-level output voltage V
OL
2 BO1, BO2: IO= 5 mA 1.25 V
V
OL
3 DO: IO= 1 mA 0.25 V
V
OL
4 AOUT: IO= 1 mA, AIN = 2.0 V 0.5 V
I
IH
1 CE, CL, DI: VI= 6.0 V 5.0 µA
High-level input current I
IH
2 XIN: VI= V
DD
0.16 0.9 µA
I
IH
3 AIN: VI= 6.0 V 200 nA
I
IL
1 CE, CL, DI: VI= 0 V 5.0 µA
Low-level input current I
IL
2 XIN: VI= 0 V 0.16 0.9 µA
I
IL
3 AIN: VI= 0 V 200 nA
Output leakage current
I
OFF
1 AOUT, BO1, BO2: VO= 10 V 5.0 µA
I
OFF
2 DO: VO= 6.0 V 5.0 µA
High-level 3-state off leakage current
I
OFFH
PD: VO= 6.0 V 0.01 200 nA
Low-level 3-state off leakage current
I
OFFL
PD: VO= 0 V 0.01 200 nA
Operating Characteristics at Ta = 25°C, VCC= 5.0 V, VDD= 3.0 V,
in the specified test circuit, using Yamaichi Electronics socket IC51-0362-736