Sanyo LC7932M Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CMOS IC
16-Bit LED Driver
Ordering number:ENN2780B
LC7932, 7932M
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The LC7932, 7932M are LSIs that contain a 16-bit bidirectional shift register and are capable of direct driving a multiple lighting LED (dot matrix or dot array). The LC7932,
7932M are especially suited for use in LED display panel,
PPC photosensitive drum LED erase head applications.
Features
• Silicon gate C-MOS device capable of high-speed, highcurrent drive.
• High-speed shiftable 16-bit bidirectional shift register/16bit latch/output control circuit/16-bit N-channel transistor open drain output transistor on chip.
• Serial shift data is shifted on the positive transition of the
clock (CLOCK) pulse.
• The data latch circuit outputs input data when the latch
control (LATCH) pin is at L-level and holds output data
when the latch control (LATCH) pin is at H-level.
• Maximum ratings of driver output: VO = +15V, IOL =
30mA (STATIC)/120mA(DYNAMIC).
• Operating voltage of logic unit: VDD = 4.5V to 5.5V.
• Operating clock frequency: f
• Package: LC7932 : DIP30S
LC7932M : MFP30S
• The bidirectional shift register is so designed as to cause a
shift to occur in the SI to SO direction when L/R = Llevel and in the SO to SI direction when L/R = H-level.
• When a high lev el is applied to the LSET pin (“latch set”),
the latch data is set to the high level. The latch data does
not change when the LSET pin is low or open.
= DC to 5MHz (max).
CLK
Package Dimensions
unit:mm
3061-DIP30S
[LC7932]
30
1
1.15
1.78
unit:mm
3073B-MFP30SD
30
1
27.2
0.48 0.95
[LC7932M]
15.2
0.4
1.0
16
10.16
15
4.25
0.51min
SANYO : DIP30S
16
7.9
15
0.25
(2.25)
2.45max
0.1
(0.6)
SANYO : MFP30SD
8.6
4.95max
3.2
9.2
0.65
0.25
10.5
62501TN (KT)/22895TH (KOTO)/2090YT/5238MO, TS No.2780–1/5
LC7932, 7932M
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusmumixaMV
egatlovtupnIV
egatlovtuptuO
tnerructuptuOI
noitapissidrewopelbawollAxamdP
erutarepmetgnitarepOrpoT 58+ot52–
erutarepmetegarotSgtsT)etoN( 521+ot53–
Note
When mounting the MFP package version, do not dip it in solder.
Allowable Operating Conditions at Ta = –25˚C to +85˚C
retemaraPlobmySsnoitidnoC
egatlovylppuSV
egatlovlevel-hgihtupnIV
egatlovlevel-woltupnIV
ycneuqerfkcolCf
htdiweslupkcolCt
emitllaf/esirkcolCt
emitputesataDt
emitdlohataDt
htdiwesluphctaLt
xam 0.7+ot3.0–V
DD
I
VO1tuptuo)NIS(TUOSVot3.0–
VO2FFOrTtuptuo,tuptuo61Dot1D 51V
O
WΦ
,rtf
V
DD
HI
LI
KLC
SD
HD
LW
DD
58=aT2397CL°C 004Wm
58=aTM2397CL°C 072Wm
R/L,TESL
R/L,TESL
%05:ytuD:KCOLC 0.5zHM
KCOLC57sn
KCOLC 002sn
HCTAL001sn
Vot3.0–
3.0+V
DD
3.0+V
DD
niptuptuorep,tuptuo61Dot1D 03Am
sgnitaR
nimpytxam
5.45.5V
,EBORTS,OEB,HCTAL,KCOLC,)TUOS(NIS
V8.0
DD
,EBORTS,OEB,HCTAL,KCOLC,)TUOS(NIS
VSS)L(V2.0
KCOLC,)TUOS(NIS001sn
KCOLC,)TUOS(NIS05sn
V
DD
DD
˚C
˚C
tinU
V
V
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatlovlevel-hgihtupnI
tnerruclevel-woltupnI
egatlovlevel-hgihtuptuOV
egatlovlevel-woltuptuO
tnerrucegakaeletats-FFOtuptuOI
ecnaticapactupnIC
tnerrucgnitarepOI
Switching Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
htdiwyaledhctalkcolCt
htdiwyaledkcolchctaLt
t
emityalednoitagaporplevel-hgihtuptuO
emityalednoitagaporplevel-woltuptuO
t
t
t
t
t
sgnitaR
nimpytxam
IHI1R/L,HCTAL,KCOLC,)TUOS(NIS 01Aµ
IHI2TESL,OEB071Aµ
ILI1R/L,HCTAL,KCOLC,)TUOS(NIS–01Aµ
ILI2EBORTS071Aµ
k0.1=LR(;nD:61Dot1D,EBORTS,OEB Ω,
,Fp51=LC;TUOS:)NIS(TUOS,KCOLC
k0.1=LR(;nD:61Dot1D,EBORTS,OEB Ω,
,Fp51=LC;TUOS:)NIS(TUOS,KCOLC
VDD–5.0
htiwstuptuollA,V5=
sgnitaR
nimpytxam
5Am
004sn
003sn
002sn
002sn
001sn
002sn
HO
VLO1I:)NIS(TUOS
VLO2I:61Dot1D
FFO
NI
DD
LC
CL
1
HLP
2
HLP
3
HLP
1
LHP
2
LHP
3
LHP
I:)NIS(TUOS
=– V,Am5.0
HO
LO
LO
V:61Dot1D
O
KCOLC0.5Fp
V
f
:DD
KLC
daolon
VDDV5=
V,)Fp51=LC
VDDV5=
V,)Fp51=LC
V,)Fp51=LC
VDDV5=
V,Am03=
V51=02Aµ
V,zHM5=
DD
V:HCTAL,KCOLC
V5=001sn
DD
V:HCTAL,KCOLC
V5=0sn
DD
V5=
DD
V5=
DD
V5=
DD
V5=
DD
V,Am5.0=
V5=5.0V
DD
V5=5.0V
DD
k0.1=LR(;nD:61Dot1D,HCTAL Ω ,)Fp51=LC,
k0.1=LR(;nD:61Dot1D,TESL,HCTAL Ω,
tinU
V
tinU
No.2780–2/5
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