Specifications
Absolute Maximum Ratings at Ta = 25°C
Allowable Operating Ranges at Ta = –30 to +70°C
Electrical Characteristics at Ta = –30 to +70°C, VDD= 5 V unless otherwise specified.
Timing Characteristics at Ta = –30 to +70°C, VDD= 5 ± 0.5 V
No. 4248-2/11
LC74770M
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
DD
max V
DD
VSS– 0.3 to VSS+ 7.0 V
Maximum input voltage V
IN
max All input pins VSS– 0.3 to VDD+ 0.3 V
Maximum output voltage V
OUT
max BLK1, BLK2, CHA1, CHA2, P0 to P3, CK
OUT
VSS– 0.3 to VDD+ 0.3 V
Allowable power dissipation Pd max 300 mW
Operating temperature Topr –30 to +70 °C
Storage temperature Tstg –40 to +125 °C
Parameter Symbol Conditions min typ max Unit
Supply voltage V
DD
V
DD
4.5 5.0 5.5 V
Input high-level voltage V
IH
RST, CS, SIN, SCLK, HSYNC, VSYNC 0.8 V
DD
VDD+ 0.3 V
Input low-level voltage V
IL
RST, CS, SIN, SCLK, HSYNC, VSYNC VSS– 0.3 0.2 V
DD
V
Oscillator frequency f
OSC
OSCINand OSC
OUT
oscillator pins 5 7 10 MHz
Parameter Symbol Conditions min typ max Unit
Output high-level voltage V
OH
BLK1, BLK2, CHA1, CHA2, P0 to P3: VDD= 5.0 V,
4.5 V
I
OH
= –1.0 mA
Output low-level voltage V
OL
BLK1, BLK2, CHA1, CHA2, P0 to P3: VDD= 5.0 V,
0.5 V
I
OL
= 1.0 mA
Input current
I
IH
RST, CS, SIN, SCLK, HSYNC, VSYNC: VIN= V
DD
1 µA
I
IL
HSYNC, VSYNC: VIN= V
SS
–1 µA
Operating current drain I
DD
VDD: all outputs open, LC = 7 MHz 10 mA
Parameter Symbol Conditions min typ max Unit
Minimum input pulse width
t
W (SCLK)
SCLK 200 ns
t
W (CS)
CS (the period that CS is high) 1 µs
Data setup time
t
SU (CS)
CS 200 ns
t
SU (SIN)
SIN 200 ns
Data hold time
t
h (CS)
CS 2 µs
t
h (SIN)
SIN 200 ns
Single word write time
t
word
The time to write 8 bits of data 4.2 µs
t
wt
The time to write RAM data 1 µs