The LC7152, 7152M, 7152NM, 7152KM are universal
dual-PLL frequency synthesizers for use in weak signal type
cordless telephone applications in the USA, South Korea, and
Japan, and broadcast satellite (BS) tuners in the USA and
Europe.
Features
.
Dual charge pump built in for fast channel switching
.
Digital lock detector enables PLL lock status check with
crystal oscillator precision
.
Programmable reference frequency divider supports various
applications
.
The LC7152NM is a built-in power-on reset circuit version
of the LC7152M
.
The LC7152KM is an enhanced frequency characteristics
version of the LC7152M
Functions
.
2-system PLL built-in (dual PLL)
.
16-bit programmable local-oscillator divider 1.5 to 55 MHz
(V
= 2.0 to 3.3 V), LC7152KM: 55 to 80 MHz (VDD=
DD
2.7 to 3.3 V)
.
14-bit programmable reference-frequency divider
320 Hz to 640 kHz reference frequency using a 10.24 MHz
crystal oscillator
.
Digital lock detector
.
Dual charge pump
.
Amplifier built-in for an active LPF
.
Serial transmission data input (CCB format)
.
LC7152NM with power-on reset circuit (pins OUTA and
OUTB become open at power-on)
.
2.0 to 3.3 V supply voltage
.
DIP24S and MFP24S packages
.
CCB is a trademark of SANYO ELECTRIC CO., LTD.
.
CCB is SANYO’s original bus format and all the bus
addresses are controlled by SANYO.
Package Dimensions
unit : mm
3067-DIP24S
[LC7152]
24
1
0.811.78
unit : mm
21.2
0.48
3112-MFP24S
[LC7152M, 7152NM, 7152KM]
24
112
12.6
0.35
13
6.4
7.62
12
3.25
3.9max
3.3
0.51min
0.95
SANYO : DIP24S (300 mil)
13
5.4
0.15
1.8max
1.5
0.1
1.0
0.8
SANYO : MFP24S
6.35
0.625
0.25
7.6
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61199RM (II)/41495TH(ID) No.3889-1/13
LC7152, 7152M, 7152NM, 7152KM
Specifications
Absolute Maximum Ratings at Ta = 25°C, VSS=0V
ParameterSymbolConditionsRatingsUnit
Maximum supply voltageV
Maximum input voltage
Maximum output voltage
Maximum output current
Allowable power dissipationPd max
Operating temperatureTopr–40 to +85°C
Storage temperatureTstg–55 to +125°C
Allowable Operating Ranges at Ta = –40 to +85°C, VSS=0V
maxV
DD
V
max(1)CE, CL, DI, AIA, AIB–0.3 to +7.0V
IN
V
max(2)XIN, PIA, PIB, TEST–0.3 to VDD+0.3V
IN
max(1)LDI, LDB–0.3 to +7.0V
V
O
V
max(2)AOA, AOB, OUTA, OUTB–0.3 to +15V
O
V
max(3)
O
I
max(1)LDA, LDB, OUTA, OUTB0to3mA
O
I
max(2)AOA, AOB0 to 6mA
O
DD
PDA1, PDA2, PDB1,
PDB2, XOUT
–0.3 to +7.0V
–0.3 to VDD+0.3V
Ta% 85°C, LC7152350mW
Ta% 85°C, LC7152M,
7152NM, 7152KM
160mW
ParameterSymbolConditions
V
(1)V
Supply voltage
Input high-level voltage
Input low-level voltage
Output voltage
Input frequency
Input amplitude
Crystal oscillator frequencyf
DD
V
(2)VDD:Serial data retention voltage, see Figure1, *11.5V
DD
(3)
V
DD
V
(1)CE, CL, DI:VDD= 2.0 V1.55.5V
IH
V
(2)CE, CL, DI:VDD= 3.3 V1.75.5V
IH
V
(1)CE, CL, DI:VDD= 2.0 V00.4V
IL
V
(2)CE,CL,DI:VDD= 3.3 V00.6V
IL
V
(1)LDA, LDB05.5V
O
V
(2)AOA, AOB, OUTA, OUTB013V
O
f
(1)XIN:Sine wave, capacitively coupled1.013 MHz
IN
f
(2)PIA, PIB: Sine wave, capacitively coupled *21.555 MHz
IN
f
(3)PIA, PIB: Sine wave, capacitively coupled *35580 MHz
IN
V
(1)XIN: Sine wave, capacitively coupled200600 mVrms
IN
V
(2)PIA, PIB: Sine wave, capacitively coupled *2,3100600 mVrms
IN
X’tal
DD
:Power-on reset voltage, tR^ 20 ms,
V
DD
see Figure1, *1
XIN, XOUT: CI % 50 Ω CL % 16 pF *44 10.2411 MHz
Note *1 LC7152NM
FA/FB (serial data input frequency select bits)
[0][1]
*2f
*3f
(2)1.5 to 23 MHz20 to 55 MHz2.0 to 3.3 V
IN
(3)—————55 to 80 MHz2.7 to 3.3 VLC7152KM
IN
*4 Cl is the crystal impedance and CL is the load capacitance.
Ratings
mintypmax
Unit
2.03.3V
0.05V
V
DD
Device
LC7152, 7152M,
LC7152NM, 7152KM
No.3889-2/13
LC7152, 7152M, 7152NM, 7152KM
Electrical Characteristics in the allowable operating ranges
ParameterSymbolConditions
V
(1)PDA1, PDB1: IO= 1 mAVDD– 1.0V
Output high-level voltage
Output low-level voltage
Output off-leakage current
Input high-level current
Input low-level current
Internal feedback resistance
OH
V
(2)PDA2, PDB2: IO= 2 mAVDD– 1.0V
OH
V
(1)PDA1, PDB1: IO1 mA1.0V
OL
V
(2)PDA2, PDB2: IO= 2 mA1.0V
OL
V
(3)OUTA, OUTB: IO=1mA1.0V
OL
V
(4)LDA, LDB: IO=2mA1.0V
OL
V
(5)AOA, AOB: IO= 0.5 mA, AIA = AIB = 1.2 V0.5V
OL
V
(6)AOA, AOB: IO= 1 mA, AIA = AIB = 1.3 V0.5V
OL
I
(1)LDA. LDB: VO= 5.5 V5.0µA
OFF
I
(2)PDA1, PDB1, PDA2, PDB2: VO= 0/3.3 V0.0110.0nA
OFF
I
(3)AOA, AOB, OUTA, OUTB: VO=13V5.0µA
OFF
(1)CE, CL, DI: VI= 5.5 V5.0µA
I
IH
I
(2)XIN: VI= 3.3 V, VDD= 3.3 V2.06.5µA
IH
I
(3)PIA, PIB: VI= 3.3 V, VDD= 3.3 V3.510.0µA
IH
I
(4)AIA, AIB: VI= 3.3 V0.0110.0nA
IH
I
(5)TEST: VI= 3.3 V, VDD= 3.3 V120µA
IH
I
(1)CE, CL, DI: VI= 0 V5.0µA
IL
I
(2)XIN: VI=0V,VDD= 3.3 V2.06.5µA
IL
I
(3)PIA, PIB: VI=0V,VDD= 3.3 V3.510.0µA
IL
I
(4)AIA, AIB: VI= 0 V0.0110.0nA
IL
I
(5)TEST: VI=0V,VDD= 3.3 V5.0µA
IL
R
(1)XIN: VDD= 3.3 V1.0MΩ
f
R
(2)PIA, PIB:VDD= 3.3 V600kΩ
f
Internal pull-down resistanceRdTEST: V
Input capacitanceC