Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CMOS IC
4-bit Microcontroller with Built-in PROM
Ordering number:ENN3492
LC66P408
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The LC66P408 is a 4-bit microcontroller with a built-in 8
Kbyte PROM. It is compatible with the LC6640X series
mask ROM devices, making it ideal for prototyping and
software development and testing.
The LC66P408 features 33 user-defined options comprising output configuration, output level after reset, watchdog timer and oscillator configuration options. The output
configuration options are open-drain, open-drain with pullup, and CMOS. The oscillator options are ceramic resonator, RC oscillator and external clock.
The LC66P408 operates from a 5 V supply and is a v ailable
in 42-pin DIPs and 48-pin QFPs.
Features
• 33 user-defined options including port output configuration, output level after reset and watchdog timer options
• Ceramic resonator, RC oscillator or external cloc k option
• 8 Kbyte PRQM (0000H to 2007H user addressable)
• Compatible with the LC6640X series mask ROM devices
3. Heat-soak the QIP package before mounting. Do not immerse the package in the solder dip tank when mounting the
QIP on the substrate, and avoid prolonged contact with the solder.
0.7+ot3.0–V
3.0+V
DD
3.0+V
DD
2Am
4Am
02Am
57Am
57Am
52Am
52Am
˚C
˚C
Recommended Operating Conditions at Ta = 25°C, V
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppuSV
egnaregatlovylppuSV
noitneter
atadrofegnaregatlovylppusedom-dloH
DD
DD
V
DD
SS
= 0V
Electrical Characteristics at T a = –30 to +70°C, VDD = 4.5 to 5.5V, VSS = 0V unless otherwise noted
retemaraPlobmySsnoitidnoC
rotanosercimareczHM45.40.8Am
tnerrucylppusedom-teseRI
tnerrucylppusedom-tlaHI
tnerrucylppusedom-dloHI
SER.6Pdna5P,)33Pgnidulcxe(3P,2PstroP
egatlovlevel-woltupni1CSOdna
egatlovlevel-woltupni33P/DLOHV
TSETdnaEPdnaDP,CP,4P,1P,0PstroP
egatlovlevel-woltupni
level-hgihtupni)33Pgnidulcxe(6Pot2PstroP
egatlov
level-hgihtupni1CSOdnaSER,33P/DLOH
egatlov
level-hgihtupniEPdnaDP,CP,1P,0PstroP
egatlov
tuptuoCPdna)33Pgnidulcxe(6Pot0PstroP
egatlovlevel-wol
CPdna6P,)33Pgnidulcxe(3P,2PstroP
egatlovlevel-hgihtuptuo
level-hgihtuptuo5Pdna4P,1P,0PstroP
egatlov
DD
THDD
V
DHDD
DD
V
1LI
V
2LI
V
3LI
V
V
V
V
LO
V
V
DD
1HI
2HI
3HI
I
LO
I
LO
I
HO
1HO
I
HO
V
DD
2HO
I
HO
kcolclanretxezHM45.60.11Am
rotallicsoCR48Am
rotanosercimareczHM40.35.5Am
kcolclanretxezHM45.30.6Am
rotallicsoCR0.35.5Am
V5.5ot8.1=10.00.01Aµ
.1etoneeS
V5.5ot8.1=V
.1etoneeS
.2etoneeS
.1etoneeS
Am6.1=4.0
Am6.1=5.1
I,V5.4=
HO
.FFOrotsisnartlennahc-ntuptuO
.FFOrotsisnartlennahc-ntuptuO
.FFOrotsisnartlennahc-ntuptuO
FFOrotsisnartlennahc-ntuptuO
.FFOrotsisnartlennahc-ntuptuO
.3etoneeS.Am1–=V
.3etoneeS.Am1.0–=V
.4etoneeS.Am2.0–=4.2
.4etoneeS.Am31.0–=
nimpytxam
V
SS
SS
V
SS
V57.0
DD
V57.0
DD
V7.0
DD
0.1–
DD
5.0–
DD
V
53.1–
DD
sgnitaR
Continued on next page.
5V
5.5ot5.4V
5.5ot8.1V
tinU
V52.0
V
DD
V52.0
V
DD
V3.0
V
DD
5.31V
V
V
DD
V
V
DD
V
V
V
No.3492–4/14
LC66P408
Continued from preceding page.
retemaraPlobmySsnoitidnoC
1CSOdnaSERdna,6Pdna5P,3P,2PstroP
V
egatlovdlohserhtlevel-wolreggirt-ttimhcS
1CSOdnaSERdna,6Pdna,5P,3P,2PstroP
egatlovdlohserhtlevel-hgihreggirt-ttimhcS
1CSOdnaSER,6Pdna5P,3P,2PstroP
egatlovsiseretsyhreggirt-ttimhcS
stupnillaroftnerruclevel-woltupnII
tnerruc
tnerruclevel-hgihtupni
tnerruc
noitpopu-llup
ycneuqerftupnirotanosercimareCf
ycneuqerftupnirotallicsoCRf
ecnaticapacrotallicsoCRlanretxEC
ecnatsiserrotallicsoCRlanretxER
level-hgihtupni)33Pgnidulcxe(6Pot2PstroP
1CSOdnaSERdna,33Pdna1P,0PstroP
level-hgihtupniEPdnaDP,3CP,2CPstroP
tnerrucegakaeltuptuo6Pot2PstroPI
tnerrucegakaeltuptuoCPdna1P,0PstroPI
htiwtnerructuptuo5Pdna4P,1P,0PstroP
emitnoitazilibatstupnirotanosercimareCf
Notes
1. Ports with CMOS output configuration option cannot be used as input ports.
2. Open-drain output configuration option
3. CMOS output configuration option
4. Pull-up output configuration option
Lt
V
Ht
V
SYH
VIV=
V
I
VIV=
VIV=
V
I
VIV=
VIV=
SS
.2etoneeS
.2etoneeS
DD
.1etoneeS
DD
.1etoneeS
DD
SSV,DD
Ω
k2.2=R
.2etoneeS.V5.31=
.2etoneeS.
%1±Fp001=C,%1±23
LI
I
1HI
I
2HI
I
3HI
1FFO
2FFO
I
OP
FC
SFC
CR
txe
txe
sgnitaR
nimpytxam
V52.0
DD
V5.0
DD
V1.0
.FFOrotsisnartlennahc-ntuptuo,
.FFOrotsisnartlennahc-ntuptuo,V5.31=
.FFOrotsisnartlennahc-ntuptuo,
.FFOrotsisnartlennahc-ntuptuo,
.4etoneeS.V5.5=6.1–Am
1–Aµ
V5.0
DD
V57.0
DD
DD
5
1
1
5
1
4zHM
01
4
001Fp
2.2k
tinU
V
V
V
Aµ
Aµ
Aµ
Aµ
Aµ
sm
zHM
Ω
A/D converter characteristics at Ta = –30 to +70 °C, V
retemaraPlobmySsnoitidnoC
noituloseRseR6tib
ycaruccaetulosbAA
rorreytiraeniLniL5.0±1±bsI
egatlovtupnigolana6NAot1NAV
emitnoisrevnocdeeps-woLt
emitnoisrevnocdeeps-hgiHt
SBA
DANI
LDAC
HDAC
= 4.5 to 5.5 V, VSS = 0V
DD
Comparator characteristics at Ta = –30 to +70 °C, VDD = 4.5 to 5.5 V, VSS = 0V
retemaraPlobmySsnoitidnoC
ycaruccarotarapmoc6NAot1NAA
egatlovdlohserht6NAot1NAV
egatlovtupnigolana6NAot1NAV
egatlovtupni6NAot1NAV
emitnoisrevnoCt
MCEC
MCHT
DANI
MCNI
MCC
sgnitaR
nimpytxam
1±5.1±bsI
V
SS
t821
CYC
t46
CYC
sgnitaR
nimpytxam
1±5.1±bsI
5.0±1±bsI
V
SS
V
SS
V
t652
t821
V
V
DD
CYC
CYC
DD
DD
03sµ
tinU
V
sµ
sµ
tinU
V
V
No.3492–5/14
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