Sanyo LC4132C Specifications

Ordering number : ENN*6477
51200RM (OT) No. 6477-1/12
Overview
The LC4132C is a segment driver for large-scale dot matrix LCDs. The LC4132C latches 240 bits of display data sent from the controller (in 4- or 8-bit parallel units) and generates the LCD drive signals. The LC4132C and the LC4102C common driver form a chip set that can drive a large-screen LCD panel.
Features
• CMOS (p-substrate) high voltage process
• LCD drive voltage: 36 V
• Logic system supply voltage: 2.7 to 5.5 V
• fcp max: 12 MHz (VDD= 5 V ±10%), 10 MHz (VDD=
2.7 to 4.5 V)
• Slim chip
• Can be switched between 4-bit an 8-bit parallel input.
• Output direction switching
• Display off function that holds the LCD drive voltages at fixed levels.
• Display duty: 1/160 to 1/480
• Supports COG (chip on glass) mounting. (Gold bump pads are used.)
LC4132C
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Dot Matrix STN LCD Segment Driver
CMOS IC
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Block Diagram
No. 6477-2/12
LC4132C
O1
V0
V0
4 Level LCD Drive Circuit (240 bits)
Output Control
Level Shifter
2nd Latch (240 bits)
Bits Control
Address Decoder
Address Counter
Chip Disable & Latch Control
1st Latch (8 bits × 30)
V2 V3 V5
VDDH
VDD VSS
EIO2
V2 V3
V5
VDDH
DISP
M
LOAD
BS
D0
to D7 CP
R/L
EIO1
O2
O3
O4
O238
O239
O240
No. 6477-3/12
LC4132C
The electrical characteristics listed below apply when packaged in the Sanyo PGA-208 package.
Notes: 1. D0 to D7, LOAD, CP, R/L, DISP, M, EIO1, EIO2, BS
2. The following relationships must hold for V0, V2, V3, and V5: V
DDH
V0 V2 V
DDH
– 7 V, and 7 V V3 V5 VSS.
Notes: 3. D0 to D7, LOAD, CP, R/L, M, DISP, BS, EIO1, EIO2
4. The following relationships must hold for V0, V2, V3, and V5: V
DDH
V0 V2 V
DDH
– 7 V, and 7 V V3 V5 VSS. At power on: The logic system power supply must be applied before the high-voltage system power supply. (Or they must both be applied at the same time.) At power off: The high-voltage system power supply must be turned off before the logic system power supply. (Or they must both be turned off at the same time.)
Note: 5. The clock rise time (tr) and the clock fall time (tf) must meet the conditions (1) and (2) shown below.
1
—— – tw (cph) – tw (cpl)
fcp
(1) tr, tf < ———————————— (2) tr, tf 50 ns
2
Parameter Symbol Conditions
Ratings
Unit
min typ max
V
DD
max V
DD
–0.3 7.0 V
Maximum supply voltage V
DDH
max V
DDH
–0.3 40.0 V
V
SS
max V
SS
–0.3 0.3 V
V
IN
*
1
–0.3 VDD+ 0.3 V
Input voltage
V0, V2 V0, V2 *
2
V
DDH
– 7.0 V
DDH
+ 0.3 V
V3 V3 *
2
–0.3 VSS+ 7.0 V
V5 V5 *
2
–0.3 0.3 V Operating temperature Topr –20 +75 °C Storage temperature Tstg –55 +125 °C
Absolute Maximum Ratings at VSS= 0 V
Parameter Symbol Conditions
Ratings
Unit
min typ max
V
DDVDD
2.7 5.5 V
Supply voltage V
DDHVDDH
20 36 V
V
SS
V
SS
0 V
Input high-level voltage V
IH
*
3
0.8 V
DD
V
DD
V
Input low-level voltage V
IL
*
3
0 0.2 V
DD
V
V0, V2 V0, V2 *
4
V
DDH
– 7.0 V
DDH
V
Input voltage V3 V3 *
4
0 V
SSH
+ 7.0 V
V5 V5 *
1
0 V
Allowable Operating Ranges at Ta = –20 to +75°C, VSS= 0 V
Parameter Symbol Conditions
Ratings
Unit
min typ max CP clock frequency fcp CP 12 MHz High-level load pulse width tw (ldH) LOAD 50 ns High-level clock pulse width tw (cpH) CP 20 ns Low-level clock pulse width tw (cpL) CP 20 ns LOAD/CP setup time tsu (ld) LOAD, CP 100 ns LOAD/CP hold time tho (ld) LOAD, CP 200 ns DATA/CP setup time tsu (cp) CP, D0 to D7 10 ns DATA/CP hold time tho (cp) CP, D0 to D7 10 ns EIO input setup time tsu (ei) CP, EIO1, EIO2 24 ns Clock rise time tr LOAD, CP *
5
50 ns
Clock fall time tf LOAD, CP *
5
50 ns
VDD= 5 V ±10%, Ta = –20 to +75°C, VSS= 0 V
No. 6477-4/12
LC4132C
Note: 6. The clock rise time (tr) and the clock fall time (tf) must meet the conditions (1) and (2) shown below.
1
—— – tw (cph) – tw (cpl)
fcp
(1) tr, tf < ———————————— (2) tr, tf 50 ns
2
Parameter Symbol Conditions
Ratings
Unit
min typ max CP clock frequency fcp CP 10 MHz High-level load pulse width tw (ldH) LOAD 50 ns High-level clock pulse width tw (cpH) CP 37 ns Low-level clock pulse width tw (cpL) CP 37 ns LOAD/CP setup time tsu (ld) LOAD, CP 100 ns LOAD/CP hold time tho (ld) LOAD, CP 350 ns DATA/CP setup time tsu (cp) CP, D0 to D7 35 ns DATA/CP hold time tho (cp) CP, D0 to D7 35 ns EIO input setup time tsu (ei) CP, EIO1, EIO2 30 ns Clock rise time tr LOAD, CP *
6
50 ns
Clock fall time tf LOAD, CP *
6
50 ns
VDD= 2.7 to 4.5 V, Ta = –20 to +75°C, VSS= 0 V
Notes: 7. D0 to D7, LOAD, CP, R/L, M, DISP, EIO1, 2, BS
8. V
O
is the voltage applied by an on-state output, V0 = V
DDH
, V2 = 18/20 (V
DDH
– VSS), V3 = 2/20 (V
DDH
– VSS), V5 = VSS.
9. Measured when either LOAD = 28 kHz, CP = 10 MHz, and M = 75 Hz, or with no load and input at V
IH
= VDDor VIL= VSS.
10. The current drain in standby mode. Or when EIOn (input) = V
DD
.
Parameter Symbol Conditions
Ratings
Unit
min typ max Input high-level voltage I
IH
VIN= VDD*
7
5 µA
Input low-level voltage I
IL
1 VIN= VSS*
7
–5 µA
Output high-level voltage V
OHIO
= –0.4 mA: EIO1, EIO2 VDD– 0.4 V
DD
V
Output low-level voltage V
OLIO
= 0.4 mA: EIO1, EIO2 V
SS
0.4 V
V
DDH
= 36 V *
8
Output on resistance R
OUT
V0 – VO= 0.5 V, V2 – VO= 0.5 V
1 3 k
V
O
– V3 = 0.5 V, VO– V5 = 0.5 V
: O1 to O240
I
DD
VDD= 2.7 to 5.5 V 5.0 mA
Current drain I
DDH
VDD= 2.7 to 5.5 V, V
DDH
= 32 V *
9
3.0 mA
V
DD
= 5 V ±10%, V
DDH
= 36 V 3.0 mA
I
ST
*
10
500 µA
Electrical Characteristics at Ta = –20 to +75°C, VDD= 2.7 to 5.5 V, VSS= 0 V
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