Sanyo LC3564BT-70 Specifications

Overview

The LC3564B, LC3564BS, LC3564BM, and LC3564BT
are 8192-word × 8-bit asynchronous silicon gate CMOS
SRAMs. These are full CMOS type SRAMs that adopt a
six-transistor memory cell and feature fast access times,
low operating power dissipation, and an ultralow standby
current. These SRAMs provide three control signal inputs:
an OE input for high-speed memory access, and two chip
enable lines, CE1 and CE2, for low power mode and
device selection. These means that these SRAMs area
ideal for systems that require low power and battery
backup, and that they support easy memory expansion.
The ultralow standby current that is a feature of these
SRAMs allows them to be used with capacitor backup as
well. Since these SRAMs support 3-V operation, they are
also appropriate for use in portable battery operated
systems.

Features

• Supply voltage range: 2.7 to 5.5 V
— In 5-V operation mode: 5.0 V ±10%
— In 3-V operation mode: 3.0 V ±10%

• Address access time (tAA)
— In 5-V operation mode:

LC3564B, BS, BM, and BT-70: 70 ns (max)
LC3564B, BS, BM, and BT-10: 100 ns (max)

— In 3-V operation mode:

LC3564B, BS, BM, and BT-70: 200 ns (max)
LC3564B, BS, BM, and BT-10: 500 ns (max)

• Ultralow standby current
— In 5-V operation mode: 1.0 µA (Ta ≤ 70°C),

3.0 µA (Ta ≤ 85°C)

— In 3-V operation mode: 0.8 µA (Ta ≤ 70°C),

2.5 µA (Ta ≤ 85°C)

• Operating temperature range
— In 5-V operation mode: –40 to 85°C
— In 3-V operation mode: –40 to 85°C

• Data retention supply voltage: 2.0 to 5.5 V

• All input and output levels:
— In 5-V operation mode: TTL compatible levels
— In 3-V operation mode: V

CC

–0.2 V/0.2 V

• Three control inputs: OE, CE1, and CE2

• Shared input and output pins, three-state outputs

• No clock required

• Packages
28-pin DIP (600 mil) plastic package: LC3564B
28-pin DIP (300 mil) plastic package: LC3564BS
28-pin SOP (450 mil) plastic package: LC3564BM
28-pin TSOP (8 × 13.4 mm) plastic package: LC3564BT

Package Dimensions

unit: mm

3012A-DIP28 (600 mil)

unit: mm

3133-DIP28 (300 mil)

CMOS IC

53098HA (OT) No. 5804-1/9

SANYO: DIP28 (600 mil)

[LC3564B]

SANYO: DIP28 (300 mil)

[LC3564BS]

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

64K (8192-word × 8-bit) SRAM with OE, CE1, and CE2

Control Pins

LC3564B, BS, BM, BT-70/10

Ordering number : EN5804A

No. 5804-2/9

LC3564B, BS, BM, BT-70/10

SANYO: SOP28

[LC3564BM]

unit: mm

3187-SOP28

Pin Assignments

SANYO: TSOP28 (type I)

[LC3564BT]

unit: mm

3221-TSOP28 (type I)

Block Diagram

Pin Functions

A0 to A12 Address inputs

WE Read/write control input
OE Output enable input

CE1, CE2 Chip enable inputs

I/O1 to I/O8 Data I/O

V

CC

, GND Power supply and ground

Function Table

X : H or L

Mode CE1 CE2 OE WE I/O Supply current

Read cycle L H L H Data output I

CCA

Write cycle L H X L Data input I

CCA

Output disable L H H H High impedance I

CCA

Not selected

H X X X High impedance I

CCS

X L X X High impedance I

CCS

Address buffer

Input data

buffer

Input data

control circuit

Row decoder

Memory cell array

Column

I/O circuit

Column

decoder

Address

buffer

Output

data

No. 5804-3/9

LC3564B, BS, BM, BT-70/10

Parameter Symbol Conditions Ratings Unit

Maximum supply voltage V

CC

max 7.0 V

Input voltage V

IN

–0.3* to VCC+ 0.3 V

I/O voltage V

I/O

–0.3 to VCC+ 0.3 V
Operating temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +125 °C

Specifications

Absolute Maximum Ratings at Ta = 25°C

Note: For pulse widths less than 30 ns: –3.0 V

Note: These parameters are sampled, and are not measured for every unit.

Note: For pulse widths less than 30 ns: –3.0 V

Note *: Reference values at V

CC

= 5 V, Ta = 25°C

[5-V Operation]

Parameter Symbol Conditions

Ratings

Unit

min typ max

I/O pin capacitance C

I/OVI/O

= 0 V 6 10 pF

Input pin capacitance C

IN

VIN= 0 V 6 10 pF

Input and Output Capacitances at Ta = 25°C, f = 1 MHz

Parameter Symbol Conditions

Ratings

Unit

min typ max

Supply voltage V

CC

4.5 5.0 5.5 V

Input voltage

V

IH

2.2 VCC+ 0.3 V

V

IL

–0.3* +0.8 V

DC Allowable Operating Ranges at Ta = –40 to +85°C, VCC= 4.5 to 5.5 V

Parameter Symbol Conditions

Ratings

Unit

min typ * max

Input leakage current I

LI

VIN= 0 to V

CC

–1.0 +1.0 µA

I/O leakage current I

LO

V

CE1

= VIHor V

CE2

= VILor VOE= VIHor

–1.0 +1.0 µA

V

WE

= VIL, V

I/O

= 0 to V

CC

Output high-level voltage V

OHIOH

= –1.0 mA 2.4 V

Output low-level voltage V

OLIOL

= 2.0 mA 0.4 V

V

CE1

≤ 0.2 V, V

CE2

≥ VCC– 0.2 V,

Ta ≤ 70°C

0.01 1.0 µA

I

CCA1II/O

= 0 mA, VIN≤ 0.2 V or

VCC– 0.2 V/0.2 V

V

IN

≥ VCC– 0.2 V

Ta ≤ 85°C

3.0

inputs

min

LC3564B,BS, BM, BT-70

35

mA

I

CCA4

cycle

LC3564B,BS,BM,BT-10

30

1 µs cycle 4 mA

Operating supply current

I

CCA2

V

CE1

= VIL, V

CE2

= VIH, I

I/O

= 0 mA,

7 mA

V

IN

= VIHor V

IL

TTL inputs min

LC3564B,BS, BM, BT-70

40

mA

I

CCA3

cycle

LC3564B,BS,BM,BT-10

35

1 µs cycle 7 mA

Standby mode supply

V

CC

– 0.2 V/0.2 V

V

CE2

≤ 0.2 V or

Ta ≤ 70°C

0.01 1.0
µA

current

inputs

I

CCS1VCE1

≥ VCC– 0.2 V

V

CE2

≥ VCC– 0.2 V

Ta ≤ 85°C

3.0

TTL inputs I

CC2VCE2

= VILor V

CE1

= VIH, VIN= 0 to V

CC

2.0 mA

DC Electrical Characteristics at Ta = –40 to +85°C, VCC= 4.5 to 5.5 V

V

CE1

≤ 0.2 V,

V

CE2

≥ VCC– 0.2 V,

I

I/O

= 0 mA,

DUTY = 100%

V

CE1

= VIL,

V

CE2

= VIH,

I

I/O

= 0 mA,

DUTY = 100%