SANYO LB1934T Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Monolithic Digital IC
3V Camera 1.5-Channel Driver
Ordering number:ENN6195A
LB1934T
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The LB1934T is a low-voltage, low-saturation forward/ reverse dri v er IC with b uilt-in 1.5-channel bridg e. Its com­pact, low-profile package makes it ideal for use in compact cameras powered by 3V lithium batteries. Using direct microcontroller drive, it is possible to control standby, forward rotation, reverse rotation, and braking of two motors for film rewind and lens dri ve b y means of only three control signals. The 0.5-channel section of the 1.5­channel bridge can be divided into sink/source output, al­lowing configurations such as 1-channel bridge + sink out-
put + source output.
Features
• Low voltage drive possible. When using same power supply for VCC and VS : VCC=VS=1.4V min. When using separate power supply for VCC and VS : VS=1.0V min., VCC=1.4V min.
• Low saturation v oltage : residual v oltage (upper side tran­sistor + lower side transistor) =0.5V typ. at Io=1A.
• Zero power dissipation in standby mode.
• Direct microcontroller drive possible (any strength rela­tionships of voltage supported between microcontroller control signal and VCC or VS).
• Logic power supply and motor power supply can be sup­plied at separate pins.
• Built-in thermal protection circuit.
• Number of control signals can be optimized for the set. “2-motor control” or “1-motor + 2-load control” can be implemented by 3 control signals. In addition to the above, 4 control signals allow implemention of a “input ignore mode” where two con­trol signals are used in conjunction with other IC input signals.
• Built-in spark killer diode.
• Compact, low-prof ile package (TSSOP-20 ; thickness=1.1 mm typ.)
Package Dimensions
unit:mm
3246-TSSOP20
[LB1934T]
6.5
0.65
(0.33)
20
1
0.22
11
10
6.4
4.4
(1.0)
1.2max
0.08
SANYO : TSSOP20
0.5
0.15
12502TN (KT)/62599RM (KI) No.6195–1/6
LB1934T
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatlovylppusmumixaM
tnerructuptuomumixaM
egatlovtuptuodeilppamumixaMV
egatlovtupnideilppamumixaMV
noitapissidrewopelbawollAxamdP*etartsbusdeificepshtiW 058Wm
erutarepmetgnitarepOrpoT 07+ot02–
erutarepmetegarotSgtsT 051+ot55–
VSxamV
V
CC
I
O
I
O
O
I
*Specified substrate : 76.1×114.3×1.6mm3 (glass exposy)
Allowable Operating Ranges at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusrewoP
egatlovlevel-hgihtupnIV
egatlovlevel-woltupnIV
V
V
NI NI
Electrical Characteristics at Ta = 25˚C, VS=VCC=3V
retemaraPlobmySsnoitidnoC
]niardtnerrucgnitarepO[
niardtnerrucedomybdnatSI
1niardtnerrucgnitarepoSVI 2niardtnerrucgnitarepoSVI
1niardtnerrucgnitarepoCCVI 1niardtnerrucgnitarepoCCVI
]stiucrictuptuO[
egatlovnoitarutastuptuo2TUO/1TUOV egatlovnoitarutastuptuoP3TUOV egatlovnoitarutastuptuoN3TUOV
tnerrucesreveredoidrellikkrapSI
egatlovdrawrofedoidrellikkrapSFSVN3TUO,P3TUO,2TUO,1TUO 7.1V
]tiucrictupnI[
tnerruclevel-hgihtupnII
tnerruclevel-woltupnII
S S
O
O O
S
NI
NI
S
xamV
CC
1xam2TUO,1TUO 0002Am 2xamN3TUO,P3TUO 0051Am
xamN3TUO,P3TUO,2TUO,1TUO FSV+SVot3.0–V
xam2NI,1NI,2DM,1DM 0.8+ot3.0–V
V
S
S
V
CC H2NI,1NI,2DM,1DM 0.7ot4.1V
BTS
1)esrever/drawroF(0709Am
2)ekarB(5759Am
CC CC
HV
LV
CC
L2NI,1NI,2DM,1DM 4.0+ot3.0–V
ICCI+
S
1)edomegdirb-flah/hc2/hc1(45Am
1)edomerongitupni2NI/1NI(12Am
1tasAm0001=oI)NPN+PNP(5.057.0V 2tasI)PNP( 3tasI)NPN(
)kael( 01Aµ
NI NI
0.8+ot3.0–V
0.8+ot3.0–V
˚C ˚C
0.7ot0.1V
0.7ot4.1V
sgnitaR
nimpytxam
1.03Aµ
O O
Am0001=4.055.0V Am0001=3.054.0V
)2NI,1NI,2DM,1DM(V5=07001Aµ )2NI,1NI,2DM,1DM(V0= 0Aµ
tinU
1000
With specified substrate (76.1×114.3×1.6mm
850
glass exposy)
800
600
400
200
Allowable Power Dissipation, Pd max – mW
0
–20 0 20 40 60 70 80 100
Pd max
-
Ta
3
Ambient Temperature, Ta – °C
No.6195–2/6
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