No. 5383-2/7
LB1910
Electrical Characteristics at Ta = 25°C, VCC= 5 V
Parameter Symbol Conditions min typ max Unit
Current drain
I
CCO
S/S = 5 V (standby) 10 µA
I
CC
S/S = 0 V (steady state) 12 18 mA
SL bias current I
SL
VSL= 0 V 10 µA
SL input low-level voltage V
SLL
0 1.0 V
SL input high-level voltage V
SLH
3.5 V
CC
V
S/S bias current I
S/S
180 270 µA
S/S low-level voltage V
S/SL
0 0.8 V
S/S high-level voltage V
S/SH
3.5 V
CC
V
Hall amplifier input bias current I
HB
10 µA
Common-mode input voltage
V
h
1.5 VCC– 1.0 V
range
Differential input voltage range Vdif 50 200 mVp-p
Hall bias output voltage V
H
IH= 5 mA 0.8 V
Leakage current I
HL
S/S = 5 V ±10 µA
Output saturation voltage Vsat I
O
= 0.7 A, sink + source 1.3 1.8 V
Output leakage current I
OL
1.0 mA
Current limiter Vlim 0.27 0.3 0.33 V
Control amplifier voltage gain G
C
–7 dB
Voltage gain difference between
∆G
C
±1 dB
phases
V/I conversion source current I
+
9 14 19 µA
V/I conversion sink current I
–
–9 –14 –19 µA
V/I conversion current ratio I
+/I–
0.8 1.0 1.2
DSC buffer input current I
DSC
1.0 µA
FG Schmitt hysteresis ∆Vsh * 50 mV
Speed discriminator counts N 1041.5
Discriminator operating frequency F
D
* 1.1 MHz
Oscillator frequency range F
OSC
* 1.1 MHz
Index output low-level voltage V
IDLIO
= 2 mA 0.4 V
Index output leakage current I
IDL
±10 µA
FG amplifier voltage gain G
FG
* 48 dB
FG amplifier input offset V
FG O
±10 mV
FG amplifier internal reference
V
FG B
2.2 2.5 2.8 V
voltage
Thermal shutdown temperature TSD * 150 180 °C
Hysteresis ∆TSD * 40 °C
Note: * Items marked with an asterisk are design target values and are not measured.