LB1890M
No. 4354-2/8
Electrical Characteristics at Ta = 25°C, VCC= 5V
Note: *1) Marked values (*1) are guaranteed by the design itself and therefore do not require measurement.
*2) When hall-effect input becomes larger, kick-back occurs to the output waveform and for this reason, 200 m Vp-p or less is recommended.
Ratings
Parameter Symbol Conditions
min typ max
Unit Note
Current drain
I
CCO
1 VCC= 5.0V (Stop) 0.2 mA
ICC1 VCC= 5.0V (Steady) 20 30 mA
Time changeover bias current I
SL
0.4 mA
Time changeover input voltage 1 V
SLL
0 0.8 V
Time changeover input voltage 2 V
SLH
2.0 V
CC
V
S/S1 bias current I
S/S1
0.4 mA
S/S1 start voltage V
S/S1
2.0 V
CC
V
S/S1 stop voltage V
S/S1
0 0.8 V
S/S2 bias current I
S/S2
0.1 mA
S/S2 start voltage V
S/S2
0 0.8 V
S/S2 stop voltage V
S/S2
2.0 V
CC
V
Hall-effect bias amplifier input current I
HB
20 µA
In-phase input voltage range Vh 2.2 VCC– 0.7 V
Differential input voltage range Vdif 70 250 mVp-p *2
Input offset voltage Vho ±1.0 mV *1
Hall-Effect output voltage V
H
IH= 5mA 1.5 1.8 V
Leak current I
HL
Stop ±10 µA
Output saturation voltage
Vsat1 I
O
= 0.35A, VCC= 4.2V 1.2 1.4 V
(Sink plus source)
Vsat2 I
O
= 0.70A, VCC= 4.2V 1.5 2.0 V
Output leak current I
OL
±1.0 mA
Current limiter Vref1 0.27 0.30 0.33 V
Control amplifier voltage gain G
C
–6 dB
Voltage gain phase differential ▲▲G
C
±1 dB
Integrated amplifier internal reference voltage Vref2 VCC/2 V
Integrated amplifier bias current Iib ±1 µA
Integrated output voltage amplitude
Vi
+
Ii = –0.5 mA with reference of Vref2
0.75 V
Vi
–
Ii = 0.5 mA with reference of Vref2
–1.4 V
Gain band width 1000 kHz *1
FG amplifier input voltage V
FG
5 100 mVp-p
FG amplifier voltage gain G
FG
Open loop 60 dB *1
FG amplifier input offset VFG0 ±10 mV
FG amplifier internal reference voltage V
FGB
2.20 2.50 2.80 V
Schmitt hysteresis width
▲▲Vsh1 “H”
→ “L” 25 mV *1
▲▲Vsh2 “L” → “H” 25 mV *1
Schmitt input operation level Vsh 1 V
CC
–1 V
Speed disk recount number N 992
Disk recount out “L” level voltage V
DL
ID= –0.5mA 0.3 V
Disk recount out “H” level voltage V
DH
ID= 0.5mA VCC–0.4 V
Disk recount out leak current I
DI
±1.0 µA
Disk recount operation frequency F
D
1.0 MHz *1
Oscillation range F
OSC
1.0 MHz *1
Index bias current I
IDB
±10 µA
In-phase input voltage range V
ID
1.5 VCC–0.5 V
Hysteresis setting current range I
IDO
5 10 15 µA
Index output “L” level voltage V
IDL
VID= 5V 0.4 V
Index output “H” level voltage V
IDH
VID= 5V 4.5 V
Break-down voltage V
DLDC
VID= 5V 2.50 V
Delay output “L” level voltage V
DLL
VID= 5V 0.4 V
Delay output “H” level voltage V
DLH
VID= 5V 4.5 V
Excessive heat protected operating temperature TSD 150 180 °C *1
Hysteresis width ▲▲TSD 40 °C *1