No. 5339-2/8
LB1846M, 1848M
Parameter Symbol Conditions Ratings Unit
Supply voltage V
CC
2.5 to 7.5 V
Input high-level voltage V
IH
2.0 to 7.5 V
Input low-level voltage V
IL
–0.3 to +0.7 V
Allowable Operating Ranges at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
CC
max –0.3 to +8.0 V
Output voltage V
OUT
VCC+ V
SF
V
Input voltage V
IN
–0.3 to +8.0 V
Ground pin outflow current I
GND
Per channel 800 mA
Allowable power dissipation
Pd max1 Independent IC 350 mW
Pd max2 When mounted* 870 mW
Operating temperature Topr –20 to +75 °C
Storage temperature Tstg –40 to +150 °C
Specifications
Absolute Maximum Ratings at Ta = 25°C
Note: *On the specified circuit board (a 114.3 × 76.2 × 1.5-mm3glass-epoxy printed circuit board)
Parameter Symbol Conditions
Ratings
Unit
min typ max
[LB1846M]
Current drain
I
CC
0 IN1, 2, 3, 4 = 0 V 0.1 10 µA
I
CC
1 IN1, 3 = 3 V, IN2, 4 = 0 V 30 40 mA
V
OUT
1
V
IN
= 3 V or 0 V, VCC= 3 to 7.5 V,
0.27 0.4 V
Output saturation voltage
I
OUT
= 200 mA
V
OUT
2
V
IN
= 3 V or 0 V, VCC= 4 to 7.5 V,
0.55 0.8 V
I
OUT
= 400 mA
Input current I
IN
VIN= 5 V 150 200 µA
[Spark Killer Diode]
Reverse current I
S
(leak) 30 µA
Forward voltage V
SFIOUT
= 400 mA 1.7 V
[LB1848M]
Current drain
I
CC
0 ENA = 0 V, VIN= 3 V or 0 V 0.1 10 µA
I
CC
1 ENA = 3 V, VIN= 3 V or 0 V 25 35 mA
V
OUT
1
ENA = 3 V, V
IN
= 3 V or 0 V,
0.27 0.4 V
Output saturation voltage
V
CC
= 3 to 7.5 V, I
OUT
= 200 mA
V
OUT
2
ENA = 3 V, V
IN
= 3 V or 0 V,
0.55 0.8 V
V
CC
= 4 to 7.5 V, I
OUT
= 400 mA
Input current 1 I
IN
VIN= 5 V 75 100 µA
Input current 2 I
ENA
ENA = 5 V 85 110 µA
[Spark Killer Diode]
Reverse current I
S
(leak) 30 µA
Forward voltage V
SFIOUT
= 400 mA 1.7 V
Electrical Characteristics at Ta = 25°C, VCC= 5.0 V
Note: The thermal shutdown circuit function values are design guarantees, and are not tested.