Sanyo LB1817M Specifications
Ordering number : EN4355
73098HA (OT)/20593TS A8-9155 No. 4355-1/9
Overview
The LB1817M is the ideal IC for applications requiring a
5 V, low-profile FDD spindle motor driver.
Functions and Features
• Three phase total wave linear driver (external PNP)
• Low saturation voltage
• On-chip digital speed control
• Start/stop circuit (“L” level active)
• Rotation speed switching
• Current limiter circuit
• On-chip index processing circuit
• Index timing supports adjustments using VR
• AGC circuit
• Temperature protection circuit
Package Dimensions
unit: mm
3129-MFP36S
SANYO: MFP36S
[LB1817M]
LB1817M
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
FDD Spindle Motor Driver
Monolithic Digital IC
Specifications
Absolute Maximum Ratings at Ta = 25°C
Allowable Operating Conditions at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Supply voltage V
CC
4.2 to 6.5 V
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
CC
max 7.0 V
Maximum output current I
CC
max1 t≤0.5 1.5 A
Steady maximum output current I
O
max2 1.0 A
Allowable power dissipation Pd max Independent IC 1 W
Operating temperature Topr –20 to +80 °C
Storage temperature range Tstg –40 to +150 °C
LB1817M
No. 4355-2/9
Electrical Characteristics at Ta = 25°C, VCC= 5V
Note: Marked values (*) are guaranteed by the design itself and therefore do not require measurement.
Ratings
Parameter Symbol Conditions
min typ max
Unit Note
Current drain
I
CCO
S/S = 5V (Standby) 70 100 µA
I
CC
S/S = 0V (Steady) 25 35 mA
MS1 bias current I
MS1
V
MS1
= 5V 180 270 µA
MS1 “L” level input voltage V
MS1L
0 0.8 V
MS1 “H” level input voltage V
MS1H
2.0 V
CC
V
MS2 bias current I
MS2
V
MS2
= 5V 90 135 µA
MS2 “L” level input voltage V
MS2L
0 0.8 V
MS2 “H” level input voltage V
MS2H
2.0 V
CC
V
MS3 bias current I
MS3
V
MS3
= 5V 90 135 µA
MS3 “L” level input voltage V
MS3L
0 0.8 V
MS3 “H” level input voltage V
MS3H
2.0 V
CC
V
S/S bias current I
S/S
20 µA
S/S “L” level voltage V
S/SL
0 0.8 V
S/S “H” level voltage V
S/SH
2.0 V
CC
V
Hall-effect bias amplifier input current I
HB
15 µA
In-phase input voltage range Vh 2.0 VCC– 0.7 V
Differential input voltage range Vdif 50 200 mVp-p
Input offset voltage Vho ±10 mV *
Hall-effect output voltage V
H
IH= 5mA 0.5 0.8 1.1 V
Leak current I
HL
S/S = 5V ±10 µA
Output saturation voltage Vsat IO= 0.8A 0.45 0.64 V
Output leak current I
OL
1.0 mA
Current limiter I
lim
RF= 3kΩ, ROUT = 100Ω 6.3 7.5 8.7 mA
Control amplifier voltage gain G
C
–7.5 –5.5 –3.5 dB
Voltage gain phase differential ▲▲G
C
±1 dB
V/I conversion source current I
+
19 28 37 µA
V/I conversion sink current I
–
–19 –28 –37 µA
V/I conversion current ratio I+/I
–
0.8 1.0 1.2
DSC buffer input current I
DSC
1.0 µA
FG amplifier input voltage V
FG
fFG= 300Hz 2 20 mVp-p
FG amplifier voltage gain G
FG
Open loop 60 dB *
FG amplifier input offset V
FGO
±10 mV *
FG amplifier internal reference voltage V
FGB
2.2 2.5 2.8 V
FG schmitt hysteresis width
▲▲Vsh1 “H”
→ “L” 25 mV *
▲▲Vsh2 “L” → “H” 25 mV *
Speed disk recount number N 1390/2
Disk operation frequency F
D
1.1 MHz *
Oscillation range F
OSC
1.1 MHz *
Oscillation frequency error ▲▲F
OSC
±0.2 %
Index output “L” level voltage V
IDL
IO= 2mA 0.4 V
Index output leak current I
IDL
±10 µA
Index amplifier in-phase input voltage range V
I
0.2 VCC–0.7 V
Index amplifier differential input voltage range V
DIF
Hysteresis width<25mA 25 100 mV
Index amplifier hysteresis setting current I
HYS
2.9 4.2 5.5 µA
Timing adjustment “H” level V
TH
MS1 = L 1.15 1.26 1.35 V
Timing adjustment “L” level V
TL
MS1 = L 0.4 0.52 0.6 V
Timing adjustment ratio T
HL
VTH(MS1 = L)/VTH(MS1 = H)
1.148
Reference voltage
V
REF1
2.20 2.50 2.80 V
V
REF2
1.85 2.15 2.45 V
Excessive heat protected operating temperature TSD 150 180 °C *
Hysteresis width ▲▲TSD 10 °C *
LB1817M
No. 4355-3/9
Pin Assignment
Block Diagram
[Top view]
Unit (resistance: Ω, capacitance: F)
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