Sanyo LB1619M Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Monolithic Digital IC

3-Phase Brushless Motor Driver

Ordering number:ENN3323

LB1619M

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Applications

The LB1619M is a 3-phase brushless motor driver IC ide­ally suited for use in VCR capstan motor driver, drum mo-

tor driver applications.

Features

Package Dimensions

unit:mm

3073B-MFP30SD

[LB1619M]

15.2

30

• 120° voltage linear type.

• Speed control based on motor voltage control.

• Soft switching type eliminating noises caused by current
switching and making the values of external capacitors
smaller (comparable to those of chip capacitors).

• On-chip torque ripple compensation circuit.

1

• On-chip thermal shutdown circuit.

0.4

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusmumixaMV
egatlovylppusmumixaMV

tnerructuptuOI

tnerrucylppusllaHI

noitapissidrewopelbawollAxamdP 0.1W

erutarepmetgnitarepOrpoT 57+ot02–

erutarepmetegarotSgtsT 521+ot55–

Allowable Operating Ranges at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatlovylppuSV

(Design Notes) It should be noted that dielectric breakdown is liable to occur between pin 11 and other pins.

xam 61V

CC

xam V

S

O
H

CC

16

0.25

2.45max

9.2

10.5

0.65

V

CC

5.1A
02Am

˚C
˚C

61ot6V

7.9

15

(2.25)

0.1

(0.6)

1.0

SANYO : MFP30SD

Electrical Characteristics at Ta = 25˚C, VCC=12V, VS=3V

retemaraPlobmySsnoitidnoC

1tnerrucylppuSI
2tnerrucylppuSI

tnerrucybdnatsylppuSI

egatlovnoitarutastuptuOV

VRBV5=8132Am

CC

VRBV5=0.50.7Am

S

V

QOCC

I

)tas(O

V0=081Aµ

YBTS

TUO

ecruos+knis,A0.1= 3.2V

22801TN (KT)/3270YT, TS No.3323–1/7

sgnitaR

nimpytxam

Continued on next page.

tinU

LB1619M

Continued from preceding page.

retemaraPlobmySsnoitidnoC

egatlovnwodkaerbrotsisnarttuptuOV

egatlovybdnatstuptuOV

egatlovtesffotupnireifilpmallaHV

egnar

niagegatlovtuptuo-tupnillaHG

egatlovlevel-hgihnipekarB 0.2V

egatlovlevel-wolnipekarB 8.0V

tnerructupninipekarB 001Aµ

tnerruckaelnipekarB 03–Aµ

egatlovlevel-hgihnipCRF 8.2V

egatlovlevel-wolnipCRF 2.1V

tnerructupninipCRF 001Aµ

tnerruckaelnipCRF 03–Aµ

egatlovylppusllaHV

egatlovlaudiserreppUV
egatlovlaudiserrewoLV

tniopnoitcelfniegatlovlaudiseR 0.2V

tnuomapalrevOV

tiucric

egatlovgnitarepoybdnatS 1.0V

tnerrucsaibybdnatSDNGniP 01Aµ

V

S

egatlovtupniedom-nommocreifilpmallaH

tiucricnuodtuhslamrehtfosiseretsyH* 51

tnerrucni/tuo-wolfCIetats-FFO mpr0621:snoituloverforebmuN 8.0A

V

nwodtuhslamrehtfoerutarepmetgnitarepO

Note) * : Values shown are design targets only. No measurements have been taken.

Overlap amount : Value measured at the time of shipment.

I

)sus(O

VRBV5=34.135.136.1V

QO

*5–5+Vm

tesFFOH

MOCH

OHV

I

H

H

I

HX

I

LX

CC

*051081012

*Am02=61V

TUO

)+(

VAm01=

V–

H

H

Am001=04.06.057.0V

TUO

Am001=5.06.07.0V

TUO

V,V21=

S

sgnitaR

nimpytxam

4.18.2V

snoitidnoctiucricdeificepsrednU5.135.435.73Bd

)–(

V5.3=060708%

8.00.15.1V

tinU

˚C
˚C

Pin Assignment

Note : All FRAME pins are connected to GND.

No.3323–2/7

Truth Table

LB1619M

knisecruoS

1

2

3

4

5

6

esahpW → esahpV

esahpV → esahpWH

esahpW → esahpU
esahpU → esahpWH
esahpV → esahpW

esahpW → esahpVH

esahpU → esahpV
esahpV → esahpUH
esahpV → esahpU
esahpU → esahpVH

esahpU → esahpW

esahpW → esahpUH

tupnI

UVW

HHL

HLL

LLH

LHL

HLH

LHH

esreveR/drawroF

lortnoC

L

L

Input :

H : High level. One of the inputs should hav e a potential at least

0.2V higher than the other.

L : Low level. One of the inputs should ha ve a potential at least

0.2V lower than the other.

L

Forward/reverse control :

H : 2.8 to 5V
L : 0 to 1.2V

L

L

L

Equivalent Circuit Block Diagram

No.3323–3/7

LB1619M

Pin Function Unit (resistance : Ω)

niP

.oN

2,1

51,41
71,61

03,92
3
5
7

niP

lobmyS

EMARF

DNG(

U

tuo

V

tuo

W

tuo

egatloVniPtiucriCtnelaviuqEnoitpircseDniP

.tuptuonahtrehtorofDNG

.sniptuptuO

4
6
8

9fR .rotsisnarttuptuorofDNG

01VSV<CC2 nahtrewolebtsuM.edutilpmatuptuoehtgnixifrofnipylppusrewoP

11V

31YB,TSxamV1.0:L

81ELGNA degnahcebnac)mrofevawrotomfoepols(niagtuptuo-tupnillahehT

U

R

RV

W

R

CC

nimV0.2:H

V

CC

≈ k01 Ω.

2forotsiserhtiwsniptuptuO Ω.

.egatlov2

revirdrotomnahtrehtotiucricreifilpmarewoprofnipylppusrewoP

.rotsisnart

sihtnI.gnitarepospotsyrtiucricehtlla,dednuorgsinipsihtnehW

lamronehtnI.Aµ001yletamixorppasitnerrucylppuseht,esac

folaitnetopataebotedamronepotfelsinipsiht,edomnoitarepo

.V2nahterom

.DNGdnanipsihtssorcadetcennocecnatsiserehtgnignahcyb

91RBnimV0.2:H

xamV8.0:L

rotomehtgnippotsrofniP

.)V8.0nahtsseL(evirdrotoM:levelL
.)V0.2nahteroM(potsrotoM:levelH

Continued on next page.

No.3323–4/7

LB1619M

Continued from preceding page. Unit (resistance : Ω)

niP

.oN

02CRFnimV8.2:H

niP

lobmyS

egatloVniPtiucriCtnelaviuqEnoitpircseDniP

xamV2.1:L

.rotomfolortnocesrever/drawrofrofniP

.)V2.1nahtsseL(drawroF:levelL

.)V8.2nahteroM(esreveR:levelH

V

H
HV

UNI1
UNI2
VNI1

VNI2
WNI1
WNI2

+
–

nimV4.1

xamV8.2

12
22

32
42
52
62
72
82

Note) Pin 12 (NC pin) must be left open.

Sample Application Circuit

.tnerrucsaibllahehtgniylppusrofniP

.niptupnitnemelellahesahpU

U:"H"cigoL

U>1NI2

NI

V:"H"cigoL

V>1NI2

NI

W:"H"cigoL

W>1NI2

NI

.niptupnitnemelellahesahpV

.niptupnitnemelellahesahpW

+

V(ssorcadepolevedsiV1yletamixorppafoegatlovA

H

–

HV(dna)

.)

No.3323–5/7

LB1619M

Output Voltage Waveform

Upper overlap=(2Vα–VA–VXL) / (VA–VXL)×100[%]
Lower overlap=(VA+VXL–2Vβ) / (VA–VXL)×100[%]

1. Upper overlap
DC voltage of upper amplitude : VS–VXH=V
DC voltage of lower amplitude : V

XL

Let the DC voltage at the intersection of two phases of the upper waveform be Vα :

From the drawing shown above

At upper overlap amount=A/B×100[%]
A =Vα–1/2(VS–VXH+VXL)=Vα–1/2(VA+VXL)
B =(VS–VXH)–1/2(VS–VXH+VXL)=1/2(VA+VXL)

* Upper overlap

=(2Vα–VA–VXL) / (VA–VXL)×100[%]

A

2. Lower overlap
DC voltage of upper amplitude : VS–VXH=V
DC voltage of lower amplitude : V

XL

A

Let the DC voltage at the intersection of two phases of the upper waveform be Vβ :

From the drawing shown above

At lower overlap amount=C/D×100[%]
C =1/2(VS–VXH+VXL)–Vβ=1/2(VA+VXL)–Vβ
D =1/2(VS–VXH+VXL)–VXL=1/2(VA–VXL)

* Lower overlap

=(VA–VXL–2Vβ) / (VA–VXL)×100[%]

No.3323–6/7

LB1619M

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of February, 2001. Specifications and information herein are subject
to change without notice.

PS No.3323–7/7