Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Monolithic Digital IC
6-Unit, Darlington Transistor Array
Ordering number:ENN535C
LB1274
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, T aito-ku, TOKYO, 110-8534 JAPAN
Overview
Circuit structure of this IC is a 6-unit Darlington transistor
array with NPN transistors. The IC is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages when designing circuits
to drive printer-calculators that use display tubes, cash registers, and the like.
Features
• Ideal for 18-digit printers (because it has 6 units).
• Protective diodes are incorporated against negative inputs (VIN=–40 to +20V).
• Ideal for printers, with 85-mA load current (I
OUT
max
=100mA DC).
• Spark-killer diodes accommodate L-loads.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppustuptuOV
egatlovylppustupnIV
egatlovylppus8-niPV
tnerrucwolfnituptuOI
tnerrucwolfnituptuosuoenatnatsnII
tnerrucdrawrofedoidrellikkrapSI
tnerrucwolftuonip-DNGI
tnerrucwolftuosuoenatnatsni8-niPI
noitapissidrewopelbawollAxamdP 51.1W
erutarepmetnoitcnuJjT 521
erutarepmetgnitarepOrpoT 08+ot02–
erutarepmetegarotSgtsT 521+ot04–
TUO
NI
8
TUO
PO
)s(F
7
p8
tinureP 001ot0Am
ytud ≤ sm02<htdiweslup,%01 0ot005–Am
Package Dimensions
unit:mm
3004A-DIP14TD
14
6.0
1
2.0
2.54
1.8
ytud:tinureP ≤ sm02<htdiweslup,%01051ot0Am
ytud:edoidreP ≤ sm02<htdiweslup,%01051ot0Am
[LB1274]
6.45
7.62
19.0
3.46
4.26max
3.5
0.5min
1.3
0.5
SANYO : DIP14TD
22+ot3.0–V
02+ot04–V
02+ot3.0–V
0ot007–Am
0.4
˚C
˚C
˚C
Allowable Operating Ranges at Ta = 25˚C, pin7=0V
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppustuptuOV
egatlovlevel-hgihtupnIV
egatlovlevel-woltupnIV
ecnatcudnidaoLL
TUO
HI
LI
L
Am001=tnerruclanimrettuptuo 02ot9V
Aµ001=tnerruclanimrettuptuo 1+ot53–V
deyolpmesedoidevitcetorP 001sselroHm
22801TN (KT)/O3195YK/7097KI/8055KI/7213KI, TS No.535–1/3
22sselroV
Electrical Characteristics at Ta = 25˚C, pin7=0V
retemaraPlobmySsnoitidnoC
egatlovtuptuO
egatlovgniniatsustuptuOV
tnerrucegakaeltuptuOI
tnerructupnI
tnerructuptuOI
tnerrucegakaeltupnII
tnerrucegakaeledoidrellikkrapSI
tnerrucdrawrofedoidrellikkrapSV
V
V
I
I
V
1TUO
V
2TUO
V
)s(TUO
V
ffo
VNIV81= 8.1Am
1NI
V
2NI
I
TUO
NI
V
kael
V
)s(kael
I
)s(F
Equivalent Circuit
LB1274
sgnitaR
nimpytxam
I,V0.9=
NI
I,V0.9=
NI
I,nepo=
NI
V,V0.1=
NI
V0.9= 8.0Am
NI
NI
V,Am3.0=
V53–=01–Aµ
TUO
Am051= 7.1V
)s(F
Am051=7.1V
TUO
Am001=4.1V
TUO
TUO
V22=001Aµ
TUO
V4.1=001Am
TUO
V02=8nip,V0=03Aµ
sµ01<emitdeilppa,Am051=22V
tinU
No.535–2/3