Sanyo LB1233M Specifications

Ordering number : EN5954

LB1233M

Monolithic Digital IC

LB1233M

High-Voltage/Large-Current Darlington

Transistor Array

Overview

The LB1233M is a Darlington transistor array using
NPN transistors. It is suitable for applications such as
hammer drive, lamp control, relay drive, etc. It also

incorporates a spark killer diode for the L load.

Features

• Designed for high voltage (V
drive capability (IC max=500 mA)

• Integrated base current limiting resistor

• Direct drive capability with TTL, CMOS output

≥ 50V), large current

CEO

Package Dimensions

unit:mm

3035A-MFP16

[LB1233M]

16

1

10.1

0.35

9

4.4

8

1.8max

1.5

0.1

0.6051.27

0.625

6.4

5.15

0.15

SANYO:MFP16

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability，such as life-support systems，aircrafts
control systems，or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed， even momentarily， rated values (such as maximum ratings， operating condition ranges， or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co., Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71598RM(KI) No. 5954-1/5

Ordering number : EN5954

Specifications

Absolute Maximum Ratings at Ta = 25°C

LB1233M

Applied output voltage
Output current
Applied input voltage
Ground pin current
Allowable power dissipation
Operating temperature
Storage temperature

V

OUT

I

OUT

V

IN

I

GND

Pd max

Topr
Tstg

Per unit

All 7 channels ON, f = 10 Hz, duty = 5%

Allowable Operating Ranges at Ta = 25°C

Symbol Conditions Ratings UnitParameter

Applied output voltage
Input high level voltage
Input low level voltage

Electrical Characteristics

Output leakage current
Output voltage

Input current
Spark killer diode leakage current
Spark killer diode forward current

V

OUT

V

IH

V

IL

at Ta = 25°C

SymbolParameter

I

OFF

VOH1
VOH2
V

3

OH

VOH4

I

IN

IR (S)

V

(S)1

F

V

(S)2

F

I

= 350 mA

OUT

I

≤ 100 µA

OUT

V

OUT

I

= 0.25 mA, I

IN

= 0.35 mA, I

I

IN

= 0.5 mA, I

I

IN

= 1 mA, I

V

IN

= 3.85V

V

IN

VR (S) = 50V
I

(S) = 350 mA

F

I

(S) = 400 mA

F

= 50V

OUT

OUT

OUT

= 350 mA

OUT

= 400 mA

Conditions

Conditions

= 100 mA
= 200 mA

Ratings UnitSymbolParameter

50

V

500

mA

30

V

2.8

A

0.39

–20 to +75

–40 to +150

3 to 30

-0.3 to +0.3

Ratings

min typ max

0.9

1.1

1.3

0.93

50

100

1.1

1.3

1.6

2.4

1.35
100

2.0

2.4

W

°C
°C

V
V
V

Unit

µA

V
V
V
V

mA

µA

V
V

71598RM(KI) No. 5954-2/5