SANYO LB11995 Datasheet
Ordering number : EN6112
LB11995
Monolithic Digital IC
LB1 1995
Three-Phase Brushless Motor Driver
for CD-ROM Spindle Drive
Overview
The LB11995 is a 3-phase brushless motor driver
especially suited for CD-ROM spindle motor drives.
Functions
• Current linear drive
• Control V type amplifier
• Separate power supply for output upper side bias
circuit allows low output saturation by boosting this
power supply only (useful for 5V power supply types).
• Upper side current detection technique reduces loss
voltage of current detection resistor. Voltage drop
caused by this resistor reduces internal power
dissipation of IC.
• Built-in short braking circuit
• Built-in reverse blocking circuit
• Hall FG output
• Built-in S/S function
• Built-in current limiter circuit (selectable, 2 steps)
• Built-in Hall power supply
• Built-in thermal shutdown circuit
• Supports 3.3V DSP
Package Dimensions
unit: mm
3227-HSOP24
[LB11995]
15.3
24
1
2.0
1.9
With substrate
1.6
1.2
0.8
IC only
4.3 0.3
0.3
0.8 0.85
Pd max – Ta
13
7.9
12
2.25
0.1
0.65
10.5
1.3
0.25
2.5max
SANYO : HSOP24
1.14
0.4
Allowable power dissipation, Pd max – W
0
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
0–20 20 40 60 75 80 100
Ambient temperature, Ta – °C
0.48
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62599RM(KI)
No. 6112-1/10
LB11995
Specifications
Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Power supply voltage 7.0 V
Applied output voltage 14.4 V
Applied intput voltage V
Output current 1.3 A
Allowable power dissipation Pd max IC only 0.8 W
Operating temperature Topr °C
Storage temperature Tstg °C
Operating Conditions at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Power supply voltage 4 to 6 V
VCC1 max
VCC2 max
VCC3 max
VO max
VIN max
IO max
VCC1
VCC2
VCC3
with substrate (114.3 x 76.1 x 1.6 mm3,
glass exposy)
≥ VCC1
14.4 V
14.4 V
VCC1
1.9 W
–20 to +75
–55 to +150
4 to 13.6 V
4 to 13.6 V
Sample Application at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
12V type Regulated voltage 4 to 6 V
5V type Regulated voltage 4 to 6 V
Note: When boost-up voltage is used at VCC2, output can be set to low-saturation.
VCC1
VCC2 = VCC3
V
1 = VCC3
CC
VCC2
Unregulated voltage 4 to 13.6 V
Boost-up voltage or regulated voltage
(Note)
4 to 13.6 V
No. 6112-2/10
LB11995
Electrical Characteristics at Ta = 25°C, VCC1 = 5V, VCC2 = VCC3 = 12V
Parameter Symbol
[Power supply current]
Power supply current 8 mA
Output idle current 200 µA
[Output]
Saturation voltage, upper side 1 1.0 V
lower side 1 0.3 V
Saturation voltage, upper side 2 0.3 V
lower side 2 0.3 V
Current limiter setting voltage 0.24 V
[Hall amplifier]
Common mode input voltage range 1.2 V
Input bias current 1 µA
Minimum Hall input level 60
[S/S pin]
High level voltage 2.0 V
Low level voltage 0.7 V
Input current 200 µA
Leak current –30 µA
[Control]
VC pin input current
V
pin input current
CREF
Voltage gain 0.35 times
Startup voltage 1.5 1.8 V
Startup voltage width 50 150 mV
[Hall power supply]
Hall power supply voltage 0.8 V
Allowable current 20 mA
[Thermal shutdown]
Operating temperature Design target value 150 180 210 °C
Hysteresis Design target value 15 °C
[Short braking]
Brake pin at High level 4 5 V
Brake pin at Low level 0 1 V
ICC1
ICC2
ICC3
ICC1OQ
ICC2OQ
ICC3OQ
VOU1
VOD1
VOU2
VOD2
VCL1
VCL2
V
HCOM
I
HIB
V
HIN
V
S/SH
V
S/SL
I
S/SI
I
S/SL
I
VC
I
VCREF
GV
CO
V
CTH
∆V
CTH
V
H
I
H
T
TSD
∆T
TSD
V
BRH
V
BRL
VC = V
CREF
VC = V
CREF
VC = V
CREF
V
= 0V
S/S
V
= 0V
S/S
30 µA
V
= 0V
S/S
IO = –0.5A, VCC1 = 5V, VCC2 = VCC3 = 12V
IO = 0.5A, VCC1 = 5V, VCC2 = VCC3 = 12V
IO = –0.5A, VCC1 = VCC3 = 5V, VCC2 = 12V
IO = 0.5A, VCC1 = VCC3 = 5V, VCC2 = 12V
RRF = 0.33Ω, LMC; OPEN
RRF = 0.33Ω, LMC; GND
V
= 5V
S/S
V
= 0V
S/S
VC = V
CREF
VC = V
CREF
∆VRF/∆V
V
V
CREF
CREF
C
= 1.65V
= 1.65V
IH = 5 mA
Conditions
= 1.65V
= 1.65V
Note:
• During S/S OFF (standby), the Hall comparator is at High.
• Items shown to be design target values are not measured.
Ratings
min typ max
0 mA
150 250 µA
0.35 V
VCC1–1.0
VCC1
Unit
30 µA
mV
1 µA
1 µA
P-P
No. 6112-3/10
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