SANYO LB11988 Datasheet

Ordering number :ENN6211
N0999RM (OT) No. 6211-1/6
Functions
• Three-phase full-wave current linear drive
• Built-in current limiter circuit
• Built-in saturation prevention circuits in both the upper and lower sides of the output stage.
• Thermal shutdown circuit
Package Dimensions
unit: mm
3007A-DIP18
1
9
18
10
24.2
1.94 2.54
1.20.5
3.25
3.3
3.85max
0.25
7.62
6.4
SANYO: DIP18
[LB11988]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Monolithic Digital IC
LB11988
Refrigerator Fan Motor Driver
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage
V
CC
max 24 V
V
S
max 24 V
Maximum output current I
O max
1.3 A Allowable power dissipation Pdmax Independent IC 1.13 W Operating temperature Topr –30 to +75 °C Storage temperature Tstg –55 to +150 °C
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Supply voltage
V
S
5 to 22
V
V
CC
7 to 22
Hall input amplitude V
HALL
Between Hall inputs ±30 to ±80 mV 0-P
Allowable Operating Ranges at Ta = 25°C
No. 6211-2/6
LB11988
Electrical Characteristics at Ta = 25°C, VCC= 12 V, VS = 12 V
Parameter Symbol Conditions
Ratings
Unit
min typ max
V
CC
current drain I
CC
RL= 560 (Y) 15 24 mA
[Output]
V
Osat
1
I
O
= 500 mA, Rf = 0.5 , Sink + Source
2.1 2.6 V
Output saturation voltage
(Saturation prevention function included)
V
Osat
2
I
O
= 1.0 A, Rf = 0 , Sink + Source
2.6 3.5 V
(Saturation prevention function included)
Output leakage current I
Oleak
1.0 mA
[Hall Amplifier]
Input offset voltage V
off
(HALL) –6 +6 mV
Input bias current I
b
(HALL) VIN, W
IN
13µA
Common-mode input voltage V
cm
(HALL) 3 V
CC
– 3 V
[FR]
Threshold voltage V
FRTH
48V
Input bias current Ib(FR) –5 µA
[Current Limiter]
LIM pin current limit level I
LIM
Rf = 0.5 ,
1A
With the Hall input logic states fixed (U, V, W = high, high, low)
[Saturation]
Saturation prevention circuit
V
Osat
(DET)
R
L
= 560 (Y), Rf = 0.5 ,
0.28 V
lower side voltage setting The voltage between each lower output and the corresponding Rf.
[FG Amplifier]
Upper side output saturation voltage
V
satu
(SH) 11.8 V
Lower side output saturation voltage
V
satd
(SH) 0.3 V Hysteresis Vhys 23 mV TSD operating temperature T-TSD Design target value* 170 °C
Note *: Items shown to be design target values in the conditions column are not measured.
Pin Assignment
14
12
10
11
13
9
1
2
3
4
5
6
7
8
NC
W
OUT
LB11988
15
16
17
18
FGOUT
FR
GND
FC
U
IN+
U
IN
V
IN+
VIN
W
IN+
W
IN
V
CC
VS
RF
NC
U
OUT
VOUT
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