SANYO LB11985H Datasheet

Ordering number :ENN6209B

12800RM (OT) No. 6209-1/9

Functions

• Three-phase current linear drive with switching between full-wave and half-wave operations

• Torque ripple correction circuit

• Current limiter circuit

• Upper and lower sides output stage saturation prevention circuits

• Short brake circuit

• FG amplifier

• Thermal shutdown circuit

Package Dimensions

unit: mm

3233-HSOP28H

6.2

28 15

114

0.8

15.3

2.7

0.3

4.9

1.3

10.5

0.65

0.25

0.85

7.9

2.25

2.5max

0.1

SANYO: HSOP28H

[LB11985H]

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Monolithic Digital IC

LB11985H

VCR Capstan Motor Brushless Motor Driver

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Parameter Symbol Conditions Ratings Unit

Maximum supply voltage

max 6V

max 15.5 V

Maximum output current I

max 1.5 A

Maximum output voltage V

max 30 V

Allowable power dissipation Pdmax

Independent IC 0.8 W

76.1

× 114.3 × 1.6 mm3: With glass epoxy 2.0 W Operating temperature Topr –20 to +75 °C Storage temperature Tstg –55 to +150 °C

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter Symbol Conditions Ratings Unit

Supply voltage

8 to 15

4.5 to 5.5

Hall input amplitude V

HALL

Between Hall inputs ±20 to ±100 mV 0-P

GSENSE input range V

GSENSE

With respect to the control system ground –0.20 to +0.20 V

Allowable Operating Ranges at Ta = 25°C

Note : Forward/reverse switching is not possible in half-wave operation mode.

No. 6209-2/9

LB11985H

Electrical Characteristics at Ta = 25°C, VCC= 5 V, VS= 15 V

Parameter Symbol Conditions

Ratings

Unit

min typ max

current drain I

RL = ∞, VCTL = 0 V (quiescent mode) 10 15 mA

[Output]

Output saturation voltage

Osat

= 500 mA, Rf = 0.5 Ω, Sink + Source

2.2 2.7 V

VCTL = VLIM = 5 V (with saturation prevention)

Osat

= 1.0 A, Rf = 0.5 Ω, Sink + Source

2.8 3.7 V

VCTL = VLIM = 5 V (with saturation prevention)

Output leakage current I

Oleak

1.0 mA

[FR]

FR pin input

14V

Threshold voltage FR pin input

Ib (FR) VFR = 5 V 100 150 µA

Input bias current

[BR]

BR pin input

BRTH

14V

Threshold voltage BR pin input

Ib (BR) VBR = 5 V 100 150 µA

Input bias current

[Control]

CTLREF pin voltage V

CREF

2.0 2.15 2.3 V

CTLREF pin input range V

CREF

IN 1 4 V

CTL pin input bias current Ib (CTL) VCTL = 5 V, with CTLREF open 5 µA CTL pin control start voltage V

CTL

(ST)

Rf = 0.5 Ω, VLIM = 5 V, Io ≥ 40 mA

2.0 2.2 2.4 V

With the Hall input logic states fixed (U, V, W = high, high, low)

CTL pin control Gm Gm (CTL)

Rf = 0.5 Ω, ∆Io = 200 mA

1.8 2.25 2.7 V

With the Hall input logic states fixed (U, V, W = high, high, low)

[Current Limiter]

LIM current limit offset voltage V

off

(LIM)

Rf = 0.5 Ω, VCTL = 5 V, Io ≥ 40 mA

80 200 320 mV

With the Hall input logic states fixed (U, V, W = high, high, low)

LIM pin input bias current Ib (LIM) VCTL = 5 V,VREF: OPEN, VLIM = 0 V –2 –1 µA LIM pin current limit level Gm (LIM)

Rf = 0.5 Ω, VCTL = 5 V

0.37 0.47 0.57 mA

With the Hall input logic states fixed (U, V, W = high, high, low)

[Hall Amplifier]

Input offset voltage V

off

(HALL) –6 +6 mV

Input bias current I

(HALL) 1.0 3.0 µA

Common-mode input voltage V

(HALL) 1.3 3.3 V

Torque ripple correction ratio TRC

At the bottom and peak that occur in the Rf

14.5 %

waveform at 200 mA (Rf = 0.5 Ω)

[FG Amplifier]

FG amplifier input offset voltage

off

(FG) –8 +8 mV

FG amplifier input bias current I

(FG) –100 nA

FG amplifier output saturation voltage

Osat

(FG) For the sink side, at the internal pull-up resistor 0.4 0.55 V

FG amplifier common-mode input voltage

(FG) 1.0 4.0 V

[Saturation]

Saturation prevention circuit V

Osat

(DET) Io = 10 mA, Rf = 0.5 Ω, VCTL = VLIM = 5 V

0.13 0.25 0.42 V

lower side set voltage

The voltages between the OUT-Rf pairs at full wave.

[Schmitt Amplifier]

Duty DUTY 60 mVp-p, 1 kHz input *

49 50 51 %

Upper side output saturation voltage

satu

(SH) 4.8 V

Lower side output saturation voltage

satd

(SH) 0.2 V

Hysteresis Vhys Design target values *

45 mV

TSD operating temperature T-TSD Design target values *

180 °C

TSD hysteresis ∆T-TSD Design target values *

15 °C

Note *1 : The ratings are just the measured value with no margin afforded.

*2 : Items shown to be design target values in the conditions column are not measured.

No. 6209-3/9

LB11985H

Truth Table and Control Functions

Source → Sink

Hall input

UVW

V → W

HHL

W → VL

U → W

HLL

W → UL

U → V

HLH

V → UL

W → V

LLH

V → WL

W → U

LHH

U → WL

V → U

LHL

U → VL

Note: 1. In the FR column, “H” indicates a voltage of 2.75 V or higher, and “L”

indicates a voltage of 2.25 V or lower. (When V

is 5 V.)

2. For the Hall inputs, the input high state is defined to be the state where the (+) input is higher than the corresponding (–) input by at least 0.02 V, and the input low state is defined to be the state where the (+) input is lower than the corresponding (–) input by at least 0.02 V.

Allowable Power Dissipation

0.4

0.8

1.2

1.6

2.0

2.4

–20 0 20 40 60 80 100

Pd max — Ta

0.48

1.20

Allowable power dissipation, Pd [W]

Ambient temperature, Ta [°C]

Independent IC

Mounted on the specified printed circuit board (76.1 × 114.3 × 1.6 mm3glass epoxy board)

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