SANYO LA9605W Datasheet

Ordering number : EN5980
D2598RM (OT) No. 5980-1/11
Overview
The LA9605W integrates MiniDisk playback functions, including servo error signal generation, RF signal processing, and wobble signal binarization output on a single chip. The LA9605W, when combined with an LC89640, can implement a complete MD player system.
Features
• Allows the servo error signal level to be set to an arbitrary level using a VCA circuit.
• Few peripheral components required.
• Ultraminiature package
Functions
• Servo signal I-V conversion amplifier
• Pit/groove switching RF amplifier
• RF equalizer amplifier
• Servo signal VCA
• APC circuit
• Focus error amplifier
• Tracking error amplifier
• HFL circuit
• Defect detection circuit
• ADIP amplifier
• Pre-pit circuit (pit/groove discrimination circuit)
• ADIPCR
Package Dimensions
unit: mm
3163A-SQFP48
SANYO: SQFP48
[LA9605W]
LA9605W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MD Player RF and Matrix Signal-Processing IC
Monolithic Linear IC
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
No. 5980-2/11
LA9605W
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage V
CC
max 7 V
Allowable power dissipation Pd max
When mounted on a 114.3
× 76.1 × 1.6-mm single-sided
350 mW
glass-epoxy printed circuit board. Ta 75 °C Operating temperature Topr –25 to +75 °C Storage temperature Tstg –40 to +150 °C
Specifications
Maximum Ratings at Ta = 25°C
Parameter Symbol Conditions Ratings Unit
Recommended supply voltage V
CC
5 V
Operating supply voltage range V
CC
op 2.7 to 5.5 V
Operating Conditions at Ta = 25°C
Parameter Symbol Conditions
Ratings
Unit
min typ max
Current drain I
CC
18 32 46 mA
[RF AMP GROVE]
Gain VG
RFMG
1 EQO/I : J = V
C
27 30 33 dB
[RF AMP MO.PIT]
Offset V
OS RFMP
1 RFO1 : I = J = V
C
VC– 245 VC– 185 VC– 125 mV
Gain VG
RFMP
1 EQO/I : I = J 15 18 21 dB
[RF AMP AL]
Offset V
OS RFAP
1 RFO1 : I = J = V
C
VC– 152 VC– 92 VC– 32 mV
Gain VG
RFAP
1 EQO/I : I = J = V
C
5.5 8.5 11.5 dB
[RF AMP]
Output level
H V
ORFH
1 EQO: RFI1 = VC+ 1 V 3.5 4.1 V
L V
ORFL
1 EQO: RFI1 = VC– 1 V 0.9 1.5 V
[ABCD GR]
Gain VG
ABG
1 ABCD/A (10 kHz) : A = B = C = D, SGC = 0.78 V 17.5 20.5 23.5 dB
Output level
H V
OABGH
2 ABCD : A = B = C = D = VC– 400 mV, SGC = 0.78 V 4.5 4.9 V
L V
OABGL
2 ABCD : A = B = C = D = VC+ 400 mV, SGC = 0.78 V 0.1 0.5 V
[ABCD PIT]
Gain VG
ABP
1 ABCD/A (10 kHz) : A = B = C = D, SGC = 0.3 V 10.6 13.6 16.6 dB
Frequency characteristics VG
ABP
1 ABCD/A (10 kHz) – ABCD/A (35 kHz), SGC = 0.3 V 3.9 6.9 9.9 dB
[FOCS]
Output level
H V
OFOH
1 FE : B = D = VC+ 825 mV, A = C = VC, SGC = 0.3 V 4.5 4.9 V
L V
OFOL
1 FE : B = D = VC– 825 mV, A = C = VC, SGC = 0.3 V 0.1 0.5 V
Gain V
GFO
1 FE/A (5 kHz) : A = –B = C = –D, SGC = 0.3 V 13.9 16.9 19.9 dB
Frequency characteristics V
GFO
1
FE/A (5 kHz) – FE/A (26 kHz) : A = –B = C = –D,
0.4 3.4 6.4 dB
SGC = 0.3 V
[TE GR]
Output level
H V
OTEGH
1 TE : F = VC+ 200 mV, E = VC, SGC = 0.78 V 4.5 4.9 V
L V
OTEGL
1 TE : F = VC– 200 mV, E = VC, SGC = 0.78 V 0.1 0.5 V
Gain VG
TEG
1 TE/E (5 kHz) : E = –F, SGC = 0.78 V 31.4 34.4 37.4 dB
Frequency characteristics VG
TEG
1 TE/E (5 kHz) – TE/E (38 kHz) : E = –F, SGC = 0.78 V 1.8 4.8 8.8 dB
[TE PIT]
Gain VG
TEP
1 TE/E (5 kHz) : E = –F, SGC = 0.3 V 25.2 28.2 31.2 dB
Frequency characteristics VG
TEP
1 TE/E (5 kHz) – TE/E (38 kHz) : E = –F, SGC = 0.3 V 1.8 4.8 8.8 dB
[ADIP]
Output level
H V
OADH
1 CAD : A = D = VC+ 0.4 V, B = C = V
C
1.4 1.7 2.0 V
L V
OADL
1 CAD : A = D = VC– 0.4 V, B = C = V
C
3.1 3.3 3.6 V
Electrical Characteristics at Ta = 25°C, VCC= 5 V
Continued on next page.
No. 5980-3/11
LA9605W
Parameter Symbol Conditions
Ratings
Unit
min typ max
[APC LDON]
Output level
H V
OLH
1 LDD: LD
REF
= 0 V, LDS= 1 V 3.7 4.2 4.7 V
L V
O LL
1 LDD: LD
REF
= 1 V, LDS= 0 V 0.3 0.8 1.3 V
[APC LDOFF]
Off voltage V
OLOF
1 LDD: LD
REF
= 1 V, LDS= 0 V 3.7 4.2 4.7 V
[HFL]
Output level
H V
OHFLH
1 HFL : HFLIN= VC– 0.1 V 4.6 4.8 V
L V
OHFLL
1 HFL : HFLIN= V
C
0.2 0.4 V
[DEFCT]
Output level
H V
ODEFH
1 DFO : CCI= 1.5 V 4.6 4.9 V
L V
ODEFL
1 DFO : CCI= OPEN, A = B = C = D = VC– 200 mV 0.1 0.4 V
[VC reference voltage]
VO
SCVC
: 2.35 2.5 2.65 V
VO
CLSOVC
: VC– 1 mA 2.35 2.5 2.65 V
VO
CLSIVC
: VC+ 1 mA 2.35 2.5 2.65 V
[PREPIT MO]
High-level output voltage VO
PPH
1 PPIT : I = J = 200 kHz (95 mVp-p + VC+ 0.125 V) 4.6 4.8 V
Low-level output voltage VO
PPL
1 PPIT : I = J = 30 kHz (95 mVp-p + VC+ 0.125 V) 0.2 0.4 V
High/low level switching time DTPP1
PPIT : I = J = 200 kHz to 30 kHz
70 150 230 µs
(95 mVp-p + V
C
+ 0.125 V)
[BPF]
Gain VG
BF
1 WO
O/A
(22.05 kHz) : A = –B = –C = D, SGC = 0.3 V 23.8 26.8 29.8 dB
Filter characteristics
VG
BF
2 VG
BF1
/VG
BF2
: (16 kHz), SGC = 0.3 V 0.8 4.8 9.8 dB
VG
BF
3 VG
BF1
/VG
BF3
: (30 kHz), SGC = 0.3 V 0.4 4.4 9.4 dB
[I – V]
IV voltage A V
RA
A : V (–1 µA) – V (–2 µA) 70 100 130 mV
IV voltage B V
RB
B : V (–1 µA) – V (–2 µA) 70 100 130 mV
IV voltage C V
RC
C : V (–1 µA) – V (–2 µA) 70 100 130 mV
IV voltage D V
RD
D : V (–1 µA) – V (–2 µA) 70 100 130 mV
IV voltage E V
RE
E : V (–1 µA) – V (–2 µA) 70 100 130 mV
IV voltage F V
RF
F : V (–1 µA) – V (–2 µA) 70 100 130 mV
Ta = 25°C, V
CC
= 2.7 V
[FOCS]
Offset V
OSFO
1 FE : A = B = C = D = OPEN, SGC = 0.78 V –300 0 +300 mV
[COMP]
Offset V
OSCO
1 WOI: WOI= OPEN –15 0 +15 mV
Continued from preceding page.
Test Circuit
No. 5980-4/11
LA9605W
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