Sanyo LA8515N Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Monolithic Linear IC
Telephonic Speech Network
Ordering number:ENN3301A
LA8515N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Overview
The SANYO LA8515N telephonic speech network provides amplification, switching and line drive functions for tele­phone equipment. It can perform 2 to 4 line conversion and impedance matching, and supports both DTMF and keytone signals. The LA8515N’s low operating current reduces line load. Switching between the DTMF/keytone and voice circuits is controlled directly from a single MUTE input.
The LA8515N is available in plastic 20-pin DIPs.
Features
• Direct connection to low-impedance receiver.
• DTMF/keytone and voice circuit switching controlled by a single MUTE input.
• Receive and transmit gain are adjusted automatically in response to the line current.
• Applicable to a wide v ariety of tr ansmitters and receivers by selecting external components.
Specifications
Maximum Ratings at Ta = 25˚C
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erutarepmetegarotSgtsT 051+ot55–
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L
xam 051Am
L
Package Dimensions
unit:mm
3021C-DIP20
[LA8515N]
24.0
20
1
1.0
(0.57)
2.54
0.5
1.2
11
7.62
10
(3.25)
0.51min
SANYO : DIP20
6.4
0.25
3.9max
3.3
˚C ˚C
Operating Characteristics at Ta = 25˚C, f=1kHz, See specified Test Circuit.
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I
Am02=6.3V
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L
CC
L
I
Am05=1.6V
L
I
Am021=3.21V
L
I
Am02=1.2V
L
I
Am05=6.3V
L
I
Am021=1.7V
L
12501TN (KT)/D159TA/O319TA, TS (US) No.3301–1/6
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Continued on next page.
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Continued from preceding page.
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Note) Be careful of dielectric breakdown.
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T
R
FM
T
R
FMI
ITK
HI
LI
T R
FER
LA8515N
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
I
L
V,Am02=
NI
V,Am021=
V,Am02=
NI
V,Am021=
V,Am02=
NI
V,Am021=
Am05=42k Am05=71k
Am02=56.0V Am05=31.1V
Am021=1.2V
sgnitaR
nimpytxam
VBd55–=830424Bd
VBd55–=5373Bd
NI
VBd02–=4–2–0Bd
VBd02–=5.9–7–5–Bd
NI
VBd03–=325272Bd
VBd03–=0222Bd
NI
%4=DHT,Am02=5.2p-pV
%4=DHT,Am021=6.4p-pV %01=DHT,Am02=3.0p-pV
%01=DHT,Am021=5.0p-pV
Am021otAm02=5.1V Am021otAm02=02.0V
k42aivdednuorgCDAP,Am03= 3Bd k42aivdednuorgCDAP,Am03= 6Bd
CC
tinU
V
Equivalent Circuit Block Diagram
No.3301–2/6
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