SANYO LA7577N Datasheet

Ordering number: EN 4037C

Monolithic Linear IC

LA7577N

Super-split PLL- II VIF and SIF

IF Signal Processor for TV/VTRs

Overview

The LA7577N is a high tone quality and high picture qual­ity, video IF and sound IF IC. It employs split processing
of the video IF signal and sound IF signal using SAW fil­ters and a PLL detector. Further, the PLL detector incorpo­rates a buzz canceler for Nyquist buzz interference
suppression to achieve high tone quality.

Functions

VIF stage

• VIF amplifier

• PLL detector

• B/W noise canceler

• RF AGC

• VCO

• Equalizer amplifier

• AFT

• APC detector

• APC filter

• Lock detector

• IF AGC

• Buzz canceler

Features

• Employs split processing for wide bandwidth video
characteristics

• PLL detector with buzz canceler for excellent buzz and
buzz beat characteristics

• APC time constant switch built-in

• High-speed AGC supports double time constant method

• SIF carrier level AGC in the 1st SIF stage for good SIF
weak electric field characteristics

• Good differential gain and phase characteristics

• RF AGC easily adjusted using a variable resistor

Package Dimensions

unit: mm

3067-DIP24S

[LA7577N]

1st SIF stage

• Preamplifier with AGC

• 1st SIF detector

SIF stage

• SIF limiter amplifier

• FM quadrature detector

Mute stage

• Sound mute (pin 2)

• AV mute (pin 4)

• IS-15 switch (pin 13)

Specifications

Absolute Maximum Ratings

Parameter Symbol Conditions Ratings Unit

Maximum supply voltage
Allowable power dissipation Pd max

Circuit voltages

at Ta = 25 ° C

V

max 13.8 V

CC

V

, V

3

V

11

V

23

Ta ≤ 50 ° C 1200 mW

13

V

CC

V

CC

V

CC

V
V
V

SANYO Electric Co., Ltd. Semiconductor Business Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

60597HA(ID) / 11795TH(ID) No. 4037—1/16

−

−

−

−

−

−

Parameter Symbol Conditions Ratings Unit

I

1

I

Circuit currents

1

Operating temperature range Topg V

17

I

21

I

22

I

10

CC

Storage temperature range Tstg

1. Current flowing into the IC is positive and current flowing out is negative.

LA7577N

= 9V, Ta = − 20 to +75 ° C

– −

−

∆

∆

−

−

1mA

10 mA

3mA
2mA
3mA

20 to +70 ° C

55 to +150 ° C

Recommended Operating Conditions

at Ta = 25 ° C

Parameter Symbol Ratings Unit

Supply voltage V
Operating supply voltage range V

Electrical Characteristics

at Ta = 25 ° C, V

CC

= 12V

CC

op 8.2 to 13.2 V

CC

9 or 12 V

Parameter Symbol Conditions min typ max Unit

[VIF]

Circuit current I
Quiescent video output voltage V
Maximum RF AGC voltage V
Minimum RF AGC voltage V
Quiescent AFT voltage V
Input sensitivity V

9
21

10H

10L

14

i

V

= 5V 44 55 68 mA

13

V

= 5V 6.6 7 7.4 V

13

V

= 7V 10.6 11 11.4 V

13

V

= 7V – 0 0.5 V

13

V

= 5V 3.0 5.9 8.0 V

13

33 39 45 dB/ µ V
AGC dynamic range GR 59 65 – dB
Maximum allowable input V
Video output amplitude V

max 100 105 – dB/ µ V

i

(video) 1.95 2.25 2.55 Vp-p

o

Output signal-to-noise ratio S/N 49 55 – dB
Sync signal tip voltage V
920kHz beat level l
Frequency characteristic f
Differential gain DG
Differential phase DP – 2 5 deg
Maximum AFT voltage V
Minimum AFT voltage V
White-noise threshold voltage V
White-noise clamp voltage V
Black-noise threshold voltage V
Black-noise clamp voltage V
AFT detector sensitivity S
VIF-stage input resistance R
VIF-stage input capacitance C
APC pull-in range (U) f
APC pull-in range (L) f

VCO maximum variation range

(tip) V

21

920

C

14H

14L
WTH
WCL

BTH
BCL

f

(VIF) f = 58.75MHz 0.8 1.3 1.75 k Ω

i

(VIF) f = 58.75MHz – 3.0 6.0 pF

i

PU-2
PL-2

f

U

f

L

= 10mV 4.15 4.45 4.75 V

i

P = 0, C = − 4dB, S = − 14dB 37 43 – dB
P = 0, S = − 14dB 6 8 – MHz

V

= 10mV, 87.5% mod,

i

f

= 58.75MHz

P

–36%

11 11.5 12 V

0 0.4 1.0 V

8.9 9.3 9.7 V

5.3 5.7 6.1 V

3.4 3.7 4.0 V

5.3 5.7 6.1 V
44 60 84 mV/kHz

0.6 1.6 – MHz

1.6

V

= 3V 0.6 1.6 – MHz

18

V

= 7V –

18

1.6

0.8 MHz

0.8 MHz

No. 4037—2/16

β

LA7577N

Parameter Symbol Conditions min typ max Unit

VCO control sensitivity

[1st SIF]

4.5MHz conversion gain VG 21 26 31 dB

4.5MHz output level V
1st SIF stage maximum input V
1st SIF stage input resistance R
1st SIF stage input capacitance C

SIF1

max +2.2dB, − 1dB 60 70 - mVrms

SIF

(SIF1) f = 54.25MHz 1.2 2 2.7 k Ω

i

(SIF1) f = 54.25MHz – 3 6 pF

i

[SIF]

SIF limiting sensitivity V
FM detector output voltage V

(lim) V

i

o

AM rejection AMR V
Total harmonic distortion THD V
SIF signal-to-noise ratio S/N (SIF) V

[Mute, Defeat]

AFT defeat start voltage V
AV mute threshold V
FM mute threshold V
AFT defeat voltage V

D11
4TH
2TH
D14

V

= 4.6 to 5V 1.5 3.1 6.2 kHz/mV

18

V

= 10mVrms 50 75 110 mVrms

i

= 5V – 33 39 dB/ µ V

13

V

= 5V 400 600 790 mVrms

13

= 5V 40 49 – dB

13

= 5V – 0.5 1.0 %

13

= 5V 60 78 – dB

13

0.5 2.3 – V

0.5 1.9 – V

0.5 2.0 – V

5.4 6 6.6 V

Electrical Characteristics

at Ta = 25 ° C, V

Parameter Symbol Conditions min typ max Unit

[VIF]

Circuit current I
Quiescent video output voltage V
Maximum RF AGC voltage V
Minimum RF AGC voltage V
Quiescent AFT voltage V
Input sensitivity V
Video output amplitude V
Sync signal tip voltage V
Maximum AFT voltage V
Minimum AFT voltage V
White-noise threshold voltage V
White-noise clamp voltage V
Black-noise threshold voltage V
Black-noise clamp voltage V
AFT detector sensitivity S

[SIF]

FM detector output voltage V

[Mute, Defeat]

AFT defeat start voltage V
AV mute threshold V
FM mute threshold V
AFT defeat voltage V

= 9V

CC

V

9
21

10H

10L

14

i

(video) 1.5 1.75 2.0 Vp-p

o

(tip) V

21

14H

14L
WTH
WCL

BTH
BCL

f

o

D11
4TH
2TH
D14

= 5V 39 48 59 mA

13

V

= 5V 5.0 5.4 5.8 V

13

V

= 7V 7.6 8 8.4 V

13

V

= 7V – 0 0.5 V

13

V

= 5V 2.6 4.5 6.0 V

13

37 43 49 dB/ µ V

= 10mV 3.25 3.55 3.85 V

i

8 8.5 9.0 V
– 0.3 1.0 V

6.8 7.2 7.6 V

4.0 4.4 4.8 V

2.5 2.8 3.1 V

2.5 4.1 4.5 V
28 39 55 mV/kHz

V

= 5V 400 600 790 mVrms

13

0.5 1.6 – V

0.5 1.1 – V

0.5 1.9 – V

3.9 4.5 5.1 V

No. 4037—3/16

Sample Application Circuit (Japan)

LA7577N

No. 4037—4/16

LA7577N

Sample Application Circuit (Japan)

(when the SIF, 1st SIF, AFT and RF AGC are not used)

When the SIF stage is not used

• Leave pin 1 open

• Tie pin 2 to GND

• Leave pin 24 open

When the 1st SIF stage is not used

• Connect a 0.01µF capacitor between pin 8 and GND (leave the 0.01µF capacitor on pin 23 connected to GND)

• Leave pin 22 open

When the AFT circuit is not used

• Tie pins 11 and 12 to GND

• Leave pin 14 open

When the RF AGC circuit is not used

• Connect a 0.01µF capacitor between pin 4 and GND

• Leave pin 10 open

No. 4037—5/16