Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Monolithic Linear IC
IF Signal Processing (VIF+SIF)
Circuit for TV / VCR Use
Ordering number:ENN1774E
LA7530N
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, T aito-ku, TOKYO, 110-8534 JAPAN
Overview
The LA7530N is an IC containing the VIF section and SIF
section on a single chip in the DIP20 package. The use of
the small-sized package serves to make VCR tuner units
smaller.
As compared with the LA7530, the LA7530N is provided
with 2 pins for IF AGC, permitting higher AGC speed. The
LA7530N can substitute for the LA7530, but the LA7530
cannot substitute for the LA7530N. For 9V supply , use the
LA7533.
Functions
• VIF section :VIF AMP, VIDEO DET, PEAK IF AGC,
• SIF section : SIF LIMITER AMP, FM DET , SND MUTE.
B/W NOISE CANCELLER, RF A GC, AFT,
VIDEO MUTE.
Package Dimensions
unit:mm
3021C-DIP20
[LA7530N]
24.0
(0.57)
20
1
1.0
2.54
0.5
1.2
11
7.62
10
(3.25)
0.51min
SANYO : DIP20
6.4
0.25
3.9max
3.3
Features
• High-gain VIF amplifier requiring no preamplifier.
• Higher AGC speed.
• Adjustment-free FM detector because of ceramic discriminator-used quadrature detection.
• Possible to mute video, sound for VCR.
• Small-sized package.
• Minimum number of external parts required.
Specifications
Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusmumixaMV
tnerructuo-wolFI
egatlovdeilppamumixaMV
noitapissidrewopelbawollAxamdP 1.1W
erutarepmetgnitarepOrpoT 07+ot02–
erutarepmetegarotSgtsT 521+ot55–
xam 41V
CC
xam 5Am
61
xam V
02
Ta≤40˚C
V
CC
˚C
˚C
O2500TN (KT)/52095MH/2289YT/D167AT/6145KI/3265MW, TS No.1774–1/3
LA7530N
Operating Conditions at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatlovylppusdednemmoceRV
egnaregatlovgnitarepOV
Operating Characteristics at Ta = 25˚C, VCC=12V, fP=58.75MHz, fs=54.25MHz (VIF), fo=4.5MHz (SIF)
retemaraPlobmySsnoitidnoC
tnerructiucriclatoTI
egatlovCGAFRmumixaMV
egatlovCGAFRmuminiMV
egatlovtuptuooedivtnecseiuQV
egatlovtuptuoTFAtnecseiuQV
ytivitisnestupnIiVV,MA%04,zH004=mf
egnarCGARGV,MA%04,zH004=mf
tupnielbawollamumixaMxamiVV,MA%87,zHk51=mf
edutilpmatuptuooediVV
N/StuptuON/SWCsmrVm01=iV8445Bd
egakaelreirraCLCMA%87,zHk51=mf,smrVm001=iV0555Bd
egatlovTFAmumixaMV
egatlovTFAmumimiMV
ytivitisnesnoitcetedTFAfSPEEWSWCsmrVm01=iV08011051
leveldlohserhtesionetihWV
levelpmalcesionetihWV
leveldlohserhtesionkcalBV
levelpmalcesionkcalBV
egatlovlangistuptuoFISV
citsiretcarahcycneuqerFf
niaglaitnereffiDGDDOMOEDIV%5.78)kaep(mBd72–=iV3%
esahplaitnereffiDPDDOMOEDIV%5.78)kaep(mBd72–=iV3ged
ecnatsisertupnIiR0.15.10.2kΩ
ecnaticapactupnIiC 0.30.6Fp
egatlovgnitimilFIS)mil(iVBd3– 002005smrVµ
egatlovtuptuonoitceteDV
noitrotsidcinomrahlatoT)TED(DHT,zH004=mf,smrVm001=iV ∆ zHk52±=f5.03.1%
noitcejerMARMA,zH004=mf,smrVm001=iV ∆ MA%03,zHk52±=f0506Bd
Usage Note : 1. Protective circuits must be inserted when using this IC with lines directly connecting the IC pins to external circuits.
(For example, this applies to pins 12 and 15.)
2. A 1000pF capacitor must be connected between either pin 5 and ground or between pin 5 and pin 8 to prevent VIF amplifier
oscillation.
CC
po 2.31ot9V
CC
sgnitaR
nimpytxam
CD748547Am
71
CD5.89.82.9V
H01
CD 5.0V
L01
CD7.51.65.6V
61
CD5.45.65.7V
11
O
O
)OEDIV(MA%87,zHk51=mf,smrVm01=iV9.12.25.2p-pV
O
H11
L11
HTW
LCW
HTB
LCB
)FIS(Bd02=S/P08041012smrVm
O
C
O
Bd3– 57 zHM
)TED(,zH004=mf,smrVm001=iV ∆ zHk52±=f054086058smrVm
O
PEEWSsmrVm01=iV4.68.62.7V
PEEWSsmrVm01=iV2.46.40.5V
PEEWSsmrVm01=iV1.24.27.2V
PEEWSsmrVm01=iV8.32.46.4V
p-pV8.0=036324µBd
p-pV8.0=7556Bd
Bd1±=001002smrVm
PEEWSWCsmrVm01=iV114.11V
PEEWSWCsmrVm01=iV5.00.1V
21V
tinU
zHk/Vm
Equivalent Circuit Block Diagram
No.1774–2/3