Sanyo LA7449 Specifications

Ordering number:ENN5119

Monolithic Linear IC

LA7449, 7449M

Video Signal Processing IC

for VHS VCR Systems

Overview

The LA7449 and 7449M are video signal processing single­chip ICs that handle the PAL-G, B and I, 4.43 NTSC,
MESECAM and NAP-G, B and I formats. IC internal trim­ming is used to make the LA7449, 7449M completely ad­justment free, and in combination with a special-purpose
CCD (thd LC89970, 89970M) they provide a significant
reduction in external components, including the glass de­lay line. Thus the LA7449, 7449M can significantly re­duce the signal processing board manufacturing costs. Fur­thermore, the LA7449, 7449M support the NAP format
(NTSC to PAL conv ersion) that is becoming widespread in

Europe, China and other markets.

Features

• Completely adjustment free.
The AGC, carrier, deviation, and PB-Y level are adjust­ment free.
The YC record current can also be made adjustment free
by using the LA7411, 7416 as the head amplifier.

• Support for NAP and PAL color array correction.
Full modulation using a balanced modulator allows play­back and conversion to PAL format of NTSC signals re­corded on tape.

• Crosstalk exclusion in combination with a special-pur­pose CCD
Crosstalk can be excluded without using a glass delay
line by combining the LA7449, 7449M with a special­purpose CCD (the LC89970, 89970M).

• Minimal number of external components.
New built-in components :
– Detail enhancer CR.
– C-trap in the Y low-pass filter.
– Playback C low-pass filter.

• High performance and multiple functions.
Linear phase picture controller.
Double high-pass noise canceller, high-speed AFC, DCC.
New built-in functions.

– NAP circuit.
– AVNS (advanced vertical noise suppressor).
– Automatic QH insertion.
– FM AGC.

• Miniature package (48-pin QIP or DIP).

Package Dimensions

unit:mm

3149-DIP48S

[LA7449]

48

1

1.78

2.53

unit:mm

3156-QIP48E

1.6

14.0

17.2

0.8

46.0

[LA7449M]

17.2

14.0

1.0

15.6

0.35

1.05

1.5

25

12

0.48

1.5

36

37

1.5

1.0

48

1.5

1

25

24

1.6

24

13

3.0max

SANYO : QIP48E

SANYO : DIP48S

0.15

0.1

2.7

15.24

4.25

0.51min

13.8

0.25

5.1max

3.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O2500TN (KT)/62095HA (OT) No.5119–1/10

LA7449, 7449M

Functions

All VHS format VCR signal processing functions.

Luminance Chrominance

Video amplifier. 4.43 BPF Half H killer
Feedback clamp ACC amplifier. BGP generator

R/P YNR (AVNS) Main converter VCO

REC Pre LPF White/dark clip Killer

PB Sub LPF NAP DPLL

Main LPF ACC det. Killer det.

VCA 1.3M LPF Phase shifter
Sync separator VXO/XO Sub converter

4.2V regulator Side lock det. 5.06 BPF
3rd lock protector

Video AGC amplifier. NL emphasis Preamplifier. Burst gate amplifier.
Video AGC det. Main emphasis Burst emphasis (NTSC)

Detail enhancer FM modulator APC det.
1/2 fH carrier shift AFC det.

FM AGC amplifier. Drop out det. Pre amplifier. APC det.
FM AGC det. NL de-emphasis Burst de-emhasis (NTSC) ID det.
Double limiter Picture control PB amplifier DCC
FM demodulator Y/C mix Killer Trick det.

Double highpass noise canceller PAL burst sequence
QV/QH/character insert –Compensator
Main de-emphasis Carrier balancer
DOC Burst gate amplifier.

Specifications

Pin numbers are for the LA7449M
Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatlovylppusmumuxaMV

noitapissidrewopelbawollAxamdP *0531Wm

erutarepmetgnitarepOrpoT 56+ot01–

erutarepmetegarotSgtsT 051+ot04–

Note : * When mounted on a 70mm by 65mm, 1.5mm thickness Bakelite board. The value for the DIP package is 1150mW.

Operating Conditions at Ta = 25˚C

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egatlovylppusdednemmoceRV

egatlovylppusgnitarepOV

Operating Characteristics at Ta = 25˚C, V

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]metsysYedomdroceR[

niardtnerrucedomdroceRI

1leveltuptuoEEV

1scitsiretcarahcCGA1CGAlangisoedivp-pV0.2metsyszH05:tupnI50.251.252.2p-pV
2scitsiretcarahcCGA2CGAlangisoedivp-pV5.0metsyszH05:tupnI09.100.201.2p-pV
3scitsiretcarahcCGA3CGABd6desaercniCNYSylnohtliwmetsyszH05:tupnI555516596p-pVm
4scitsiretcarahcCGA4CGABd6desaercedCNYSylnohtliwmetsyszH05:tupnI073014054p-pVm

leveltuptuorotarapescnySV

htdiwesluptuptuorotarapescnySWP

emityaleddrocererptuptuorotarapescnyS

leveldlohserhtrotarapescnySHT

levelnoitresniH-oduesP

levelnoitresnietihW

egatlovnoitcetedACVV

PL/PEnoitarepoRNYdroceRV

xam 0.7V

CC

Ta≤65˚C *

CC

po 2.5ot8.4V

CC

=5.0V

CC

nimpytxam

RCC

1langisoedivp-pV0.1metsyszH05:tupnI59.150.251.2p-pV

EE

RYS

RYS

∆T

RYS
RYS

∆ DH

R

∆ HW

R
ACV

1RNY-R

langisoedivp-pV0.1:tupnI001031061Am

thgiehevawesluptuptuoTUO-CNYSehT9.31.43.4V

htdiwesluptuptuoTUO-CNYSehT0.43.46.4sµ

emityaledTUO-CNYSehT9.01.13.1sµ

A41TotdeilppaV7.2htiW004– 003– 002– Vm
A41TotdeilppaV3.1htiW001052004Vm

00.302.304.3V

langisrabrolocdradnatsmetsyszH05:tupnI012141p-pVm

˚C
˚C

0.5V

sgnitaR

02– 51– Bd

tinU

Continued on next page.

No.5119–2/10

Continued from preceding page.

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]metsysYedomdroceR[

leveltuptuorotaludomMFV

1ycneuqerfreirraCF

1noitaiveD1VEDmetsyszH0559.000.150.1zHM

ytiraenilrotaludomMFL

f2/1

H

level

tfihsreirracSC5.68.71.9zHk

niagsisahpmEG

1scitsiretcarahcsisahpmeLNG
2scitsiretcarahcsisahpmeLNG
3scitsiretcarahcsisahpmeLNG

1scitsiretcarahcsisapmeniaMG
2scitsiretcarahcsisapmeniaMG

levelgnilppilcetihWLCWlangisoediv%001etihw,p-pV0.1:tupnI681591402%

levelgnippilckraDLCDlangisoediv%001etihw,p-pV0.1:tupnI55– 05– 54– %

]metsysYedomkcabyalP[

niardtnerrucedomkcabyalPI

emitnoitasnepmoctuoporDT

niagpoolCODG

levelYkcabyalPV

ytiraenilrotaludomedMFL

ytivitisnesnoitaludomeDS

egakaelreirraCLCp-pVm006,zHM4:tupnI04– 53– Bd

]metsysYedomdroceR[

leveltuptuorotarapescnySV

egatlovrotalugerV2.4V

1levelrotallicsoOXVV

1scitsiretcarahcCCAdroceRCCA

2scitsiretcarahcCCAdroceRCCA

leveltupninorellikCCA

leveltuptuonorellikCCA

leveltupniyrevocerrellikCCA

ytivitisneslortnocOXVS

LA7449, 7449M

sgnitaR

nimpytxam

1scitsiretcarahcycneuqerfFPL-Y1FPLYzHk005ottcepserhtiwnoitaunettazHM1ehT5.0– 0.05.0+Bd
2scitsiretcarahcycneuqerfFPL-Y2FPLYzHk005ottcepserhtiwnoitaunettazHM2ehT0.1– 0.00.1+Bd
3scitsiretcarahcycneuqerfFPL-Y3FPLYzHk005ottcepserhtiwnoitaunettazHM3ehT5.2– 5.0– 0.1+Bd
4scitsiretcarahcycneuqerfFPL-Y4FPLYzHk005ottcepserhtiwnoitaunettazHM34.4ehT 52– Bd

MF

noitrotsidcinomrahdn2tuptuorotaludomMFH

1scitsiretcarahcrecnahneliateDG
2scitsiretcarahcrecnahneliateDG
3scitsiretcarahcrecnahneliateDG

PE/PLscitsiretcarahcRNYkcabyalPG
1scitsiretcarahcsisahpme-edLNG
2scitsiretcarahcsisahpme-edLNG

1scitsiretcarahcrellecnacesionelbuoDG
2scitsiretcarahcrellecnacesionelbuoDG
3scitsiretcarahcrellecnacesionelbuoDG

1scitsiretcarahcesnopserdrahLTC-CIPG

2scitsiretcarahcesnopserdrahLTC-CIPG
1scitsiretcarahcesnopsertfosLTC-CIPG
2scitsiretcarahcesnopsertfosLTC-CIPG

)kcabyalp(levelnoitresniV-oduesP

)kcabyalp(levelnoitresniH-oduesP

)kcabyalp(levelnoitresnietihW

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emityaleddrocer-erptuptuorotarapescnyS

]metsysecnanimorhcedomdroceR[

tsrubtuptuonoisrevnocdnabwolecnanimorhC

1MF
DOM

DOM

PME

1TED
2TED
3TED

1PMELN
2PMELN

3PMELN
1EM
2EM

PCC

COD
COD

TUOV

MED

MED

1RNY-P
1EDLN
2EDLN

1CNW
2CNW

3CNW
1HP
2HP
1SP
2SP

∆ DV

P

∆ DH

P

∆ HW

P

PYS

PYS

∆T

PYS

GER

V

83-RO

1R-OXV

1R-

2R-

V

V

NO-KCCA

V

KCCA-O

FFO-KCCA

OXV

tupnioN0.12.14.1p-pV

metsyszH057.38.39.3zHM

04– 53– Bd

2– 02+%

evaweniszHk01,p-pV5.0tupnI5.0– 0.05.0+Bd

evaweniszHM2,p-pVm613:tupnI6.19.16.2Bd
evaweniszHM2,p-pVm001:tupnI1.31.41.5Bd

evaweniszHM2,p-pVm6.13:tupnI3.53.63.7Bd
evaweniszHM2,p-pVm005:tupnI5.04.13.2Bd
evaweniszHM2,p-pVm851:tupnI6.28.32.5Bd

evaweniszHM2,p-pVm05:tupnI9.44.69.7Bd

evaweniszHk005,p-pVm001:tupnI9.42.55.5Bd

evaweniszHM2,p-pVm001:tupnI1.316.311.41Bd

531061581Am

27.058.059.0sm

retalH50.1– 0.00.1+Bd

noitaived

zHM6,4,25.3– 0.05.3+%

WC+etihw%05:tupnI5.2– Bd

evaweniszHM2,p-pVm05:tupnI5.01– 0.9– 5.7– Bd
evaweniszHM2,p-pVm851tupnI8.1– 3.1– 8.0– Bd

evaweniszHM2,p-pVm05tupnI2.6– 2.5– 2.4– Bd

evaweniszHM2,p-pVm8.51tupnI7.11– 7.01– 7.8– Bd

A41TotdeilppaV5htiW051– 05– 05+Vm

A41TotdeilppaV7.2htiW004– 003– 002– Vm

A41TotdeilppaV3.1htiW001052004Vm

Bd6

Bd6

zHM0.1ahtiwlangisMFnafokcabyalproF

evaweniszHM2,p-pVm851:tupnI0.6– 0.5– 0.4– Bd

p-pVm851,zHM1=fevawenis+oediv%05:tupnI5.45.55.6Bd
p-pVm851,zHM2=fevawenis+oediv%05:tupnI0.80.90.01Bd
p-pVm851,zHM1=fevawenis+oediv%05:tupnI5.4– 5.3– 5.2– Bd
p-pVm851,zHM2=fevawenis+oediv%05:tupnI0.9– 0.7– 0.5– Bd

thgiehevawesluptuptuoTUO-CNYSehT9.31.43.4V

htdiwesluptuptuoTUO-CNYSehT2.45.48.4sµ

p-pV1,langisrabrolocdradnatsIBG/LAP:tupnI051091032p-pVm
p-pV1,langisrabrolocdradnatsIBG/LAP:tupnI003005007p-pVm

desaercnilevellangisecnanimorhcehtylnohtiW

desaercedlevellangisecnanimorhcehtylnohtiW

59.150.251.2p-pV

74.025.075.0zHM/V

4.16.18.1sµ

0.42.44.4V

2.0+6.0+Bd

5.0– 1.0– Bd
62– Bd

06– 05– Bd
02– Bd

3.12.31.5m/zH

Continued on next page.

tinU

No.5119–3/10

Continued from preceding page.

retemaraPlobmySsnoitidnoC

1egnarni-llupCPA
2egnarni-llupCPA

emityaledPGBtDp-pV1,langisrabrolocdradnatsIBG/LAP:tupnI1.34.37.3sµ

htdtiweslupPGBt

1egnarni-llupCFA
2egnarni-llupCFA

leveltsrubtuptuooediVV

leveltsrubtuptuo52niPV

leveltupninorellikkcabyalPV

egakaelreirracretrevnocniaMCPLtnenopmocegakaelreirraczHM60.5ehT04– 33– Bd

TNlevelsisahpme-edtsruBG

1leveltuptuoOXkcabyalPV

1tnerrucrotcetedDLSI
2tnerrucrotcetedDLSI

LA7449, 7449M

]metsysecnanimorhcedomdroceR[

∆f

1CPA

∆f

2CPA

W

∆f

1CFA

∆f

∆ PAN-B

2CFA

11-PO
52-PO
1P­2P-

P-KCA

P-KCAO

DB

1P-OX

∆f

∆f

OX

1DLS
2DLS

TNB

edomCSTN52.5– 0.5– 57.4– Bd

OX

edomCSTN552003543p-pVm

p-pVm03tsrub:tupni,edomPS552003543p-pVm
p-pVm03tsrub:tupni,edomPS591032562p-pVm

)zHM(916334.4–f=

]metsysecnanimorhcedomkcabyalP[

1scitsiretcarahcCCAkcabyalPCCA
2sctisiretcarahcCCAkcabyalPCCA

leveltuptuoecnanimorhcnorellikkcabyalPV

noitaivedycneuqerfrotallicsoOXkcabyalP

leveltuptuotsrubkcabyalpCSTNV

leveltsrubsixaV-noisrevnocLAPotCSTNPAN-BV0.1– 0.00.1+Bd

oitarleveltsrubnoisrevnocLAPotCSTN

sgnitaR

nimpytxam

053zH

053– zH

7.49.41.5sµ

0.1+0.7+zHk

7.3– 0.1– zHk

Bd6desaercnilevelecnanimorhcehthtiW5.0+8.0+Bd

Bd6desaercedlevelecnanimorhcehthtiW8.0– 5.0– Bd

04– 23– 52– Bd

44– 04– Bd

003054006p-pVm
9– 09+zH

071Aµ
071Aµ

0.2– 0.00.2+Bd

tinU

L7449M Control Pin Table

Pin No.

3 R/P Edit
5

6

12

14
15

18

22

23

24

26
29

44
48

Control function L M H

YNR (AVNS)-CTL

R/P

R

******

P

N, C, CTL

R/P

C-rotary

QV/QH CHARA. INS

P

Auto QH INS on

P

N. L.-on (weak)

R/P

R

Detail-ENHA

R/P

EP/LP/SP

R

SP carrier shift stop

P

NAP

NT/MESEC/PAL

R/P

Trick

P

DOC-off

P

R/P

PB-H

1.0 VDC to less
YNR-off

1.5 VDC or less
N, C-off

0 to 1.9 VDC
Low CH

0.8 VDC or less
Through

Pull down by 3.9kΩ

0.6 VDC or less
N. L-off

Normal

1.2 VDC or less
SP

1.2 VDC or less
Through

1.2 VDC or less
PAL

1.5 to 2.5 VDC
YNR-CTL

2.0 to 3.0 VDC
N, C-CTL

1.2 to 2.2 VDC
CHARA insert

1.0 to 3.0 VDC
N. L.-on

Weak and fC down

2.0 to 2.7 VDC
LP

2.0 to 2.7 VDC
Balanced-mod output

2.0 to 2.7 VDC
MESEC

2.3 VDC or more
High CH

2.6 to 3.3 VDC
Pedestal insert

3.8 VDC or more

3.5 VDC or more
YNR (strong)

3.9 VDC or more

3.7 VDC or more
QV insert

3.9 VDC or more
N. L.-off

Normal

3.9 VDC or more
EP

3.0 VDC or more
SP carrier shift stop

3.3 VDC or more
NAP-on

3.9 VDC or more
NTSC

3.9 VDC or more

4.1 VDC or more

4.0 VDC or more

Note : Do not allow pin 3 to fall under 1.5V. (The chip will enter test mode.)

No.5119–4/10

LA7449, 7449M

Function Control in each of the LA7449M Operating Modes

RNYLNrecnahneliateDCN

tidE

LMHH/LMLMHLMH

nOffOffOffOffOnOffOelbairaVretneC ––––

PS

CER

BP

ffOffOffOffOffOnOffOelbairaVretneC ––––

nOffO

PL
PE

ffOffO

nO

PS

ffO

nO

PL
PE

ffO

0.0=1K

0.0=2K

0.0=1K

0.0=2K

0.0=1K

5.0=2K

0.0=1K

5.0=2K

lortnoc5niPlortnoc81niP

2.0=1K

0.0=2K

5.0=1K

0.0=2K

0.0=1K

0.0=2K

2.0=1K

0.0=2K

2.0=1K

5.0=2K

2.0=1K

5.0=2K

2.0=1K

nOnOffOelbairaVretneC ––––

0.0=2K

5.0=1K

nOnOffOelbairaVretneC ––––

0.0=2K

5.0=1K

ffOnO ––– ffOelbairaVretneCretneC –

0.0=2K

5.0=1K

ffOnO ––– ffOelbairaVretneC –

0.0=2K

5.0=1K

nOnO ––– ffOelbairaVretneCretneC –

5.0=2K

5.0=1K

nOnO ––– ffOelbairaVretneC –

5.0=2K

Note : 1. K1 is the YNR coefficient, K2 is the LNC coefficient.

2. Use the 1/2f

carrier shift entries in parentheses when pin 23 is high.

H

3. The detail enhancer is off when pin 18 is at the middle level.

f2/1

lortnoc6niP

)H/Llortnoc81niphtiw(

lortnoc6niP

H

LTC-CIP

(×)

(×)

reirrac

tfihs

°
°

°
°

°

°

No.5119–5/10

LA7449, 7449M

No.5119–6/10

LA7449 Test Circuit (DIP)

LA7449, 7449M

No.5119–7/10

LA7449 Block Diagram (DIP)

LA7449, 7449M

No.5119–8/10

LA7449M Test Circuit

LA7449, 7449M

No.5119–9/10

LA7449M Block Diagram

LA7449, 7449M

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of October, 2000. Specifications and information herein are subject
to change without notice.

PS No.5119–10/10