SANYO FX855 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4895
FX855
Features
· Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX855 is formed with 2 chips, one being
equivalent to the 2SK1470 and the other the SB0509, placed in one package.
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
· Marking:855
SSD
SSG
D
PD
P
Tc=25˚C
D
P
Mounted on ceramic board (750mm
D
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2119
[FX855]
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
06V
51±V
2A
WP ≤ elcycytud,sµ01 ≤ %18A
2
×0.8mm)
elcyc1,evaweniszH05 01A
Continued on next page.
6W
5.1W
˚C
˚C
09V
59V
005Am
˚C
˚C
52098HA (KT)/71095TS (KOTO) TA-0115 No.4895-1/4
FX855
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEFSOM[
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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveR
ecnatsiseRlamrehT
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
R
F
R
rrtIFI=
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
I
R
I
F
VRV54= 08Aµ
R
a-jhtR 58
R
Mounted on ceramic board (750mm
0=06V
SG
V,V06=
0=001Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01=
Am1=0.10.2V
D
A1=2.10.2S
D
V,Am1=
V01=53.054.0
SG
V,A1=
V4=54.06.0
SG
zHM1=f,V01=051Fp
zHM1=f,V01=06Fp
zHM1=f,V01=21Fp
tiucriCtseTdeificepseeS6sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS02sn
V,A2=
0=0.1V
SG
Aµ003=09V
Am005= 7.0V
elcyCzHM1=f,V01=43Fp
sgnitaR
nimpytxam
tiucrICtseTdeificepseeS,Am001= 01sn
2
×0.8mm)
tinU
Ω
Ω
˚C/W
Switching Time T est CIrcuit [MOSFET]
Trr Test Circuit [SBD]
No.4895-2/4
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