SANYO FX854 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MOSFET:P-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4894
FX854
Features
· Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX854 is formed with 2 chips, one being
equivalent to the 2SJ190 and the other the SB05-05P,
placed in one package.
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
· Marking:854
SSD
SSG
D
PD
P
Tc=25˚C
D
P
Mounted on ceramic board (750mm
D
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2119
[FX854]
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
06–V
51±V
1–A
WP ≤ elcycytud,sµ01 ≤ %14–A
2
×0.8mm)
elcyc1,evaweniszH05 5A
Continued on next page.
6W
5.1W
˚C
˚C
05V
55V
005Am
˚C
˚C
52098HA (KT)/71095TS (KOTO) TA-0116 No.4894-1/4
FX854
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEFSOM[
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveR
ecnatsiseRlamrehT
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
I
R
R
I
F
F
VRV52= 05Aµ
R
rrtIFI=
Mounted on ceramic board (750mm
a-jhtR 001
V,Am1–=
0=06–V
SG
V,V06–=
SD
SG
SD
SD
SD
SD
V,A1–=
Aµ002=05V
R
R
0=001–Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D
D
V,Am005–=
V,Am005–=
SG
Am005= 55.0V
Am005–=6.00.1S
V01–=9.02.1
SG
V4–=2.16.1
SG
zHM1=f,V02–=061Fp
zHM1=f,V02–=06Fp
zHM1=f,V02–=01Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS03sn
0=9.0–V
elcyCzHM1=f,V01=81Fp
sgnitaR
nimpytxam
tiucrICtseTdeificepseeS,Am001= 01sn
2
×0.8mm)
tinU
Ω
Ω
˚C/W
Switching Time Test CIrcuit [MOSFET]
Trr Test Circuit [SBD]
No.4894-2/4
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