SANYO FX851 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MOSFET:P-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Ordering number:EN4891
FX851
Features
· Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates highdensity mounting.
· The FX851 is formed with 2 chips, one being
equivalent to the 2SJ187 and the other the SB07-03P,
placed in one package.
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]TEFSOM[
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollA
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 051+ot55–
· Marking:851
SSD
SSG
D
PD
P
Tc=25˚C
D
P
Mounted on ceramic board (750mm
D
MRR
MSR
O
MSF
Package Dimensions
unit:mm
2119
[FX851]
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
03–V
51±V
1–A
WP ≤ elcycytud,sµ01 ≤ %14–A
2
×0.8mm)
elcyc1,evaweniszH05 5A
Continued on next page.
6W
5.1W
˚C
˚C
03V
53V
007Am
˚C
˚C
52098HA (KT)/71095MO (KOTO) TA-0119 No.4891-1/4
FX851
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]TEFSOM[
egatloVnwodkaerBS-DV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroFY|sf|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
R
R
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveR
ecnatsiseRlamrehT
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
I
R
R
I
F
F
VRV51= 08Aµ
R
rrtIFI=
a-jhtR 001
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
SD
SD
SD
V,A1–=
Aµ003=03V
R
R
0=001–Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D
D
V,Am005–=
V,Am005–=
SG
Am007= 55.0V
Am005–=6.00.1S
V01–=5.057.0
SG
V4–=57.01.1
SG
zHM1=f,V01–=071Fp
zHM1=f,V01–=011Fp
zHM1=f,V01–=02Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS03sn
0=9.0–V
elcyCzHM1=f,V01=62Fp
sgnitaR
nimpytxam
tiucrICtseTdeificepseeS,Am001= 01sn
˚C/WMounted on ceramic board (750mm2×0.8mm)
tinU
Ω
Ω
Switching Time T est CIrcuit [MOSFET]
T rr Test Circuit [SBD]
No.4891-2/4
Loading...