SANYO FX803 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:NPN Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode (Twin type · Cathode Common)
DC-DC Converter
Ordering number:EN5053
FX803
Features
· Complex type of a low saturation voltage, high
speed switching and large current NPN transistor and
a fast recovery and low forward voltage Schottky
barrier diode facilitating high-sensity mounting.
· The FX803 is composed of 2 chips, one being
equivalent to the 2SB1628 and the other the
SB20W03P, placed in one package.
Electrical Connection
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
)tnemelerepeulaV(]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevA
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
· Marking:803
OBC
OEC
OBE
C
PC
B
C
MRR
MSR
I
O
I
O
MSF
Package Dimensions
unit:mm
2126
[FX803]
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
SANYO:XP6
(Bottom view)
Mounted on ceramic board (750mm2×0.8mm) 1 unit
)latoT( 4A
elcyc1,evaweniszH05 01A
Continued on next page.
06V
02V
6V
5A
8A
1A
5.1W
˚C
03V
53V
2A
˚C
˚C
52098HA (KT)/41095TS (KOTO) TA-0135 No.5053-1/4
FX803
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
)tnemelerepeulaV(]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRrrtIFI=
ecnatsiseRlamrehTa-jhtR 58
hEF)1(VECI,V2=
hEF)2(VECI,V2=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
E
I
OBE)RB(
E
no
gts
f
I
R
R
IFA2= 55.0V
F
VRV51= 001Aµ
R
R
I,V05=
BC
BE
EC
EC
R
0=001An
E
I,V5=
0=001An
C
Am005=061065
C
A3=59
C
I,V01=
Am005=022zHM
C
zHM1=f,V01=54Fp
I,A3=
Am06=022005Vm
B
I,A3=
Am06=0.15.1V
B
I,Aµ01=
0=06V
E
R,Am1–=
=∞ 02V
EB
I,Aµ01–=
0=6V
C
Aµ005=03V
tiucriCtseTdeificpeseeS03sn
tiucriCtseTdeificpeseeS003sn
tiucriCtseTdeificpeseeS04sn
zHM1=f,V01=07Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 02sn
˚C/WMounted on ceramic board (750mm2×0.8mm)
tinU
Switching Time T est CIrcuit [TR]
T rr Test Circuit [SBD]
No.5053-2/4
Loading...