SANYO FX802 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode (Twin type · Cathode Common)
DC-DC Converter
Ordering number:EN5052
FX802
Features
· Complex type of a low saturation voltage, high
speed switching and large current PNP transistor and
a fast recovery and low forward voltage Schottky
barrier diode facilitating high-sensity mounting.
· The FX802 is composed of 2 chips, one being
equivalent to the 2SB1302 and the other the
SB20W03P, placed in one packae.
Electrical Connection
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
(Top view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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]RT[
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
]DBS[
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititeper-noNV
tnerruCdeifitceRegarevA
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
· Marking:802
OBC
OEC
OBE
C
PC
B
C
MRR
MSR
I
O
I
O
MSF
Package Dimensions
unit:mm
2126
[FX802]
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
SANYO:XP6
(Bottom view)
Mounted on ceramic board (750mm2×0.8mm) 1 unit
)latoT( 4A
elcyc1,evaweniszH05 01A
Continued on next page.
52–V
02–V
5–V
5–A
8–A
1–A
5.1W
˚C
03V
53V
2A
˚C
˚C
52098HA (KT)/41095TS (KOTO) TA-0134 No.5052-1/4
FX802
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
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]RT[
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCD
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSE-CV
egatloVnoitarutaSE-BV
egatloVnwodkaerBB-CV
egatloVnwodkaerBE-CV
egatloVnwodkaerBB-EV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
)tnemelerepeulaV(]DBS[
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRrrtIFI=
ecnatsiseRlamrehTa-jhtR 58
hEF1VECI,V2–=
hEF2VECI,V2–=
V
OBC
V
OBE
V
T
I
)tas(EC
C
I
)tas(EB
C
I
OBC)RB(
C
I
OEC)RB(
E
I
OBE)RB(
E
no
gts
f
I
R
R
IFA2= 55.0V
F
VRV51= 001Aµ
R
R
Mounted on ceramic board (750mm
I,V02–=
BC
BE
EC
EC
R
0=005–An
E
I,V4–=
0=005–An
C
C
C
I,V5–=
C
I,A3–=
B
I,A3–=
B
I,Aµ01–=
E
R,Am1–=
I,Aµ01–=
C
Aµ005=03V
Am005–=041004
A4–=06
Am002–=023zHM
zHM1=f,V01–=06Fp
Am06–=052–005–Vm
Am06–=0.1–3.1–V
0=52–V
=∞ 02–V
EB
0=5–V
tiucriCtseTdeificpeseeS04sn
tiucriCtseTdeificpeseeS002sn
tiucriCtseTdeificpeseeS01sn
zHM1=f,V01=07Fp
sgnitaR
nimpytxam
tiucriCtseTdeificepseeS,Am001= 02sn
2
×0.8mm)
tinU
˚C/W
Switching Time T est Circuit T rr Test Circuit
No.5052-2/4
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