SANYO FTS2015 Datasheet

Ordering number : ENN6667

FTS2015

N-Channel Silicon MOSFET

FTS2015

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• 2.5V drive.

• Mount height 1.1mm.

Package Dimensions

unit : mm

2147A

[FTS2015]

3.0

0.65

85

6.4

4.5 0.95

0.425

0.5

1 : Drain
2 : Source

14

0.25

0.95

0.125

3 : Source
4 : Gate
5 : Drain
6 : Source

1.0

7 : Source
8 : Drain

0.1

SANYO : TSSOP8

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 28 A
Mounted on a ceramic board (1000mm2✕0.8mm) 1.3 W

30 V

±10 V

7A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance |yfs| VDS=10V, ID=7A 15 22 S

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

RDS(on)1 ID=7A, VGS=4V 16 21 mΩ
RDS(on)2 ID=2A, VGS=2.5V 22 31 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

Marking : S2015 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2895

No.6667-1/4

FTS2015

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 1550 pF
Output Capacitance Coss VDS=10V , f=1MHz 310 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 190 pF
Turn-ON Delay Time td(on) See specified Test Circuit 22 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 205 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=7A 60 nC
Gate Source Charge Qgs VDS=10V, VGS=10V, ID=7A 2.5 nC
Gate Drain Charge Qgd VDS=10V, VGS=10V, ID=7A 10 nC
Diode Forward Voltage V

SD

See specified Test Circuit 100 ns

r

See specified Test Circuit 165 ns

f

IS=7A, VGS=0 0.88 1.2 V

Switching Time Test Circuit

VDD=15V

V

IN
4V
0V

PW=10ms
D.C.≤1%

V

IN

G

D

ID=7A
RL=2.1Ω

V

OUT

Ratings

min typ max

Unit

P.G

15

3.5V

2.0V

12

4.0V

-- A
D

9

6

Drain Current, I

3

0

0

35

30

25

(on) -- mΩ

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

0.5 1.0 1.5 2.5 3.0

ID=2A

240612108

50Ω

S

ID -- V

DS

2.5V

3.0V

VGS=1.0V

2.0

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

7A

Gate-to-Source V oltage, VGS -- V

FTS2015

ID -- V

=7A, V

I

D

GS

GS

25°C

Ta=75°C

=2.5V

=4V

GS

--25°C

15

VDS=10V

12

1.5V

-- A
D

9

6

Drain Current, I

3

0

0

0.2 0.6 1.61.00.8

0.4 1.41.2 1.8

IT00447

Ta=25°C

IT00449 IT00450

40

35

30

(on) -- mΩ

25

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

=2A, V

I

D

--25--50

0

Ambient Temperature, Ta -- °C

IT00448

150125100755025

No.6667-2/4