SANYO FTS2011 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6355

FTS2011

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S2011 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %123A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A8=

)no(SD

2IDV,A2=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS2011]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source

0.125

8 : Drain
SANYO : TSSOP8

sgnitaR

nimpytxam

02V
01±V
8A

3.1W

˚C
˚C

0.65

V,Am1=

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A8=5112S

D

V4=3171mΩ

SG

V5.2=8162mΩ

SG

zHM1=f,V01=0591Fp
zHM1=f,V01=055Fp
zHM1=f,V01=073Fp

3.0

85

14

0.25

tinU

60100TS (KOTO) TA-2115 No.6355-1/4

FTS2011

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A8=

0=8.02.1V

SG

Switching Time Test Circuit

VDD=10V

V

IN
4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=8A
RL=1.25Ω

V

OUT

tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS004sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS092sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A8=06Cn
A8=6.2Cn
A8=01Cn

tinU

P.G

20

18

16
14

–A

12

D

10

8

6

Drain Current, I

4
2
0

0 0.5 1.0 1.5 2.0 2.5 3.0

30

4.0V

2.5V

50Ω

I

-- V

D

DS

2.0V

3.0V

3.5V

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

FTS2011

S

VDS=10V

VGS=1.0V

GS

Ta=25°C

1.5V

IT00436

Ta=25°C

15

VDS=10V

12

D

GS

I

-- V

–A

D

9

6

Drain Current, I

3

Ta=75°C

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.81.6

30

Gate-to-Source Voltage, VGS–V

RDS(on) -- Ta

--25

25°C

°C

IT00437

25

–mΩ

20

DS(on)

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

02 10846

8A

ID=2A

Gate-to-Source Voltage, V

GS

–V

IT00438

25

–mΩ

20

DS(on)

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

--50 --25 0 25 50 75 100 125 150

=2A, V

I

D

=8A, V

I

D

Ambient Temperature, Ta – ˚C

GS

GS

=2.5V

=4.0V

IT00439

No.6355-2/4