SANYO FTS2004 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5949A

FTS2004

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 4V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S2004 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %152A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A4=

)no(SD

2IDV,A4=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS2004]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain

0.125

SANYO : TSSOP8

sgnitaR

nimpytxam

03V
02±V
4A

3.1W

˚C
˚C

0.65

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A4=58S

D

V01=6364mΩ

SG

V4=8587mΩ

SG

zHM1=f,V01=064Fp
zHM1=f,V01=052Fp
zHM1=f,V01=021Fp

3.0

85

14

0.25

tinU

30100TS (KOTO) TA-2144 No.5949-1/4

FTS2004

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

SG
SG

I

DS

S

SG

V,A4=

0=58.02.1V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS09sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS57sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4=51Cn
A4=3Cn
A4=4Cn

tinU

ID-

VDD=15V

3.0V

D

V

S

DS

ID=4A
RL=3.75Ω

FTS2004

V

OUT

–A

D

P.G

6

5

4

3

2

10V

0V

PW=10µs
D.C.≤1%

V

IN

4.0V

6.0V

8.0V

10V

V

IN

3.5V

G

50Ω

Drain Current, I

1

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VGS=2.5V

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

Ta=

75°C

D

25°C

-

23 5723 5723 57

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

0.01

0.1 1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

VDS=10V

25°C

10

Static Drain-to-Source

2

ID-

V

10

VDS=10V

9

8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

GS

25°C

25°C

-

Ta=

°C

75

Gate-to-Source Voltage, VGS–V

-

R

100

90

80

–mΩ

70

60

DS(on)

50

40

30

20

On-State Resistance, R

10

0

02468101214161820

DS(on)

V

GS

Ta=25°C

I

=4A

D

No.5949-2/4