SANYO FTS1004 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

DC-DC Converter Applications

Ordering number:EN5992

FTS1004

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

3.0

0.975

0.65

0.25

0.1

1.0

1.2max

0.125

6.4

4.5

0.5

0.95

0.95

14

58

Features

· Low ON Resistance.

· 4V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2147

[FTS1004]

1:Drain
2:Source
3:Source
4:Gate
5:Drain
6:Source
7:Source
8:Drain

SANYO:TSSOP8

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %151–A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

03–V
02±V
3–A

3.1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R
R

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

SSD
SSG

)ffo(SG

1IDV,A3–=

)no(SD

2IDV,A1–=

)no(SD

I

SSD)RB(

D

V
V
V

V,Am1–=

0=03–V

SG

V,V03–=

SD
SG
SD

SD
SD
SD

0=01–Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01–=

Am1–=0.1–5.2–V

D

A3–=35S

D

V01–=5658mΩ

SG

V4–=531091mΩ

SG

zHM1=f,V01–=074Fp
zHM1=f,V01–=082Fp
zHM1=f,V01–=041Fp

sgnitaR

nimpytxam

tinU

40999 (KOTO) TA-1231 No.5992-1/4

FTS1004

VDD=–15V

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A3–=

DS

S

0=0.1–5.1–V

SG

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS54sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

Switching Time Test Circuit

V

IN

0V

–10V

P.G

PW=10µs
D.C.≤1%

V

IN

G

50Ω

ID=–3A
RL=5Ω

D

V

OUT

FTS1004

S

sgnitaR

nimpytxam

A3–=51Cn

D

A3–=3Cn

D

A3–=4Cn

D

tinU

–5.0V

ID-

–4.5V

-3.5

-3.0

-2.5

–A

D

-2.0

-1.5

-1.0

Drain Current, I

-0.5

0

–6.0V

–8.0V

–10.0V

-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

0

–4.0V

V

DS

–3.5V

Drain-to-Source Voltage, VDS–V

10

fs | –S

y

1.0

0.1

Forward Transfer Admittance, |

0.01

|yfs|-I

VDS=–10V

7
5

3
2

7
5

3
2

7
5

3
2

23 57 23 57 23 57

-0.1-0.01 -1.0 -10

Ta=–25

D

°C

75°C

Drain Current, ID–A

V

GS

=–3.0V

25°C

-6

-5

-4

–A

D

-3

-2

VDS=–10V

ID-

Drain Current, I

-1

0

0 -0.5 -1.0 -1.5 -2.0 -2.5 -4.0-3.5-3.0

Gate-to-Source Voltage, VGS–V

R

I

D

DS(on)

=–3A

200

180

160

–mΩ

I

=–1A

D

140

120

DS(on)

100

80

60

40

Static Drain-to-Source

On-State Resistance, R

20

0

0

-2 -4 -6 -8 -10 -12 -14 -16 -18 -20

Gate-to-Source Voltage, VGS–V

V

-

GS

°C

75

°C

25°C

Ta=–25

V

GS

Ta=25°C

No.5992-2/4