SANYO FTS1003 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6154A
FTS1003
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.425
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : S1003 Continued on next page.
SSD
SSG
D
R
R
WP ≤ elcycytud,sµ01 ≤ %151–A
PD
Mounted on a ceramic board (1000mm2×0.8mm)
D
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1IDV,A3–=
)no(SD
2IDV,A1–=
)no(SD
SD
V
SG
V
SD
SD
SD
SD
Package Dimensions
unit:mm
2147A
4.5 0.95
(0.95)
6.4
[FTS1003]
0.5
1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain
0.125
SANYO : TSSOP8
sgnitaR
nimpytxam
02–V
01±V
3–A
3.1W
˚C
˚C
0.65
V,Am1–=
0=02–V
SG
V,V02–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
D
A3–=58S
D
V4–=0709mΩ
SG
SG
3.0
85
14
0.25
Am1–=4.0–4.1–V
V5.2–=501441mΩ
zHM1=f,V01–=006Fp
zHM1=f,V01–=003Fp
zHM1=f,V01–=051Fp
tinU
30100TS (KOTO) TA-2125 No.6154-1/4
FTS1003
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
I
V,A3–=
DS
S
0=0.1–5.1–V
SG
Switching Time Test Circuit
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS041sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
sgnitaR
nimpytxam
A3–=42Cn
D
A3–=3Cn
D
A3–=6Cn
D
tinU
-
3.5
-
3.0
-
2.5
–A
D
-
2.0
-
1.5
-
1.0
Drain Current, I
-
0.5
2V
-
-
2.5V
-
3V
-
3.5V
ID-
VDD=–10V
D
S
V
DS
ID=–3A
RL=3.3Ω
FTS1003
V
IN
0V
–4V
V
IN
PW=10µs
D.C.≤1%
G
P.G
-6V-
8V
-
0
-
0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0
0
50Ω
5V-4V
Drain-to-Source Voltage, VDS–V
V
V
OUT
GS
I
-
V
-
6
VDS=-10V
-
5
–A
-
4
D
-
3
-
1.5V
-
=
2
Drain Current, I
-
1
0
0
-
0.5
D
-
1.0
75°C
GS
-
1.5
25°C
Ta=
-
25°C
-
2.0
-
2.5
Gate-to-Source Voltage, VGS–V
y
|
fs
|
-
I
100
7
5
3
fs|–S
y
2
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
23 57 23 57 23 57
-
0.01
-
0.1
D
-
1.0
Ta=
75°C
-
VDS=-10V
25°C
25°C
Static Drain-to-Source
-
10
–mΩ
DS(on)
On-State Resistance, R
200
180
160
ID=-1A
140
120
100
80
60
40
20
0
-10-2-3-4-5-6-7-8-9-
Drain Current, ID–A
R
DS(on)
ID=-3A
Gate-to-Source Voltage, VGS–V
-
V
GS
Ta=25°C
10
No.6154-2/4
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