SANYO FTD2022 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6462
FTD2022
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2022 Continued on next page.
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %102A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD
SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A5.4=
2)no(IDV,A4=
SD
SD
SD
Package Dimensions
unit:mm
2155A
[FTD2022]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
03V
02±V
5.4A
sgnitaR
8.0W
3.1W
˚C
˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A5.4=6.58 S
D
V01=6243mΩ
SG
V5.4=9355mΩ
SG
zHM1=f,V01=035Fp
zHM1=f,V01=071Fp
zHM1=f,V01=09Fp
30100TS (KOTO) TA-2670 No.6462–1/4
FTD2022
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 5.1Cn
egrahC"relliM"niarD-ot-etaGdgQ 0.1Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=15V
V
in
10V
0V
PW=10µs
D.C.≤1%
V
in
G
D
ID=4.5A
RL=3.33Ω
V
OUT
)no(tiucriCtseTdeificepSeeS9sn
d
r
)ffo(tiucriCtseTdeificepSeeS14sn
d
f
V
I
DS
S
V,V01=
SD
SG
V,A5.4=
0=97.02.1V
SG
tiucriCtseTdeificepSeeS37sn
tiucriCtseTdeificepSeeS45sn
I,V01=
A5.4=
D
D2S2 S2 G2
sgnitaR
nimpytxam
01Cn
tinU
P.G
10
9
8
7
–A
D
6
5
4
3
Drain Current, I
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
60
55
50
mΩ
–
45
40
(on)
DS
35
30
25
20
15
10
Static Drain-to-Source
On-State Resistance, R
5
0
02468101214161820
8.0V
50Ω
10.0V
6.0V
4.5V
I
D
3.5V
S
-- V
FTD2022
DS
3.0V
Drain-to-Source Voltage, VDS –V
RDS(on) -- V
GS
ID=4.5A
4.0A
Gate-to-Source Voltage, VGS –V
VGS=2.5V
IT00557
Ta=25°C
IT00559
D1S1 S1 G1
10
9
8
7
–A
D
6
5
4
3
Drain Current, I
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.53.0 4.0
(Top view)
I
D
-- V
GS
°C
Ta=75
--25°C
25°C
Gate-to-Source Voltage, VGS –V
60
50
mΩ
–
40
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--50 --25 0 25 50 75 100 125 150
RDS(on) -- Ta
=4.5V
GS
=4.0A, V
I
D
=10.0V
GS
=4.5A, V
I
D
Ambient Temperature, Ta – °C
VDS=10V
IT00558
IT00560
No.6462-2/4
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