SANYO FTD2019 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6383
FTD2019
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
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)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2019 Continued on next page.
SSD SSG
D
SG
R
SD
R
SD
WP elcycytud,sµ01 %102A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD SSG
SD
V
SG
)ffo(VSDI,V01=
1)no(IDV,A5=
2)no(IDV,A2= SD
SD SD
Package Dimensions
unit:mm
2155A
[FTD2019]
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
03V 01±V 5A
sgnitaR
8.0W
3.1W
˚C ˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1=4.03.1V
D
A5=2.1161S
D
V4=9152m
SG
V5.2=3233m
SG
zHM1=f,V01=0031Fp zHM1=f,V01=082Fp zHM1=f,V01=061Fp
21400TS (KOTO) TA-2503 No.6383–1/4
FTD2019
Continued from preceding page.
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emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
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egrahC"relliM"niarD-ot-etaGdgQ 5Cn
egatloVdrawroFedoiDV
Switching Time Test Circuit Electrical Connection
VDD=15V
V
IN
4V 0V
PW=10µs D.C.≤1%
V
IN
G
ID=5A
RL=3
D
V
OUT
)no(tiucriCtseTdeificepSeeS81sn
d
r
)ffo(tiucriCtseTdeificepSeeS031sn
d
f
V
I
DS
S
V,V01=
SD
SG
V,A5=
0=8.02.1V
SG
tiucriCtseTdeificepSeeS511sn
tiucriCtseTdeificepSeeS541sn
I,V01=
A5=
D
D2 S2 S2 G2
sgnitaR
nimpytxam
05Cn
tinU
P.G
10
3.5V
9
8
7
–A
D
6
5
4
3
Drain Current, I
2
1 0
60
4.0V
0
50
2.5V
I
D
3.0V
S
-- V
FTD2019
DS
1.5V
2.0V
VGS=1.0V
0.2
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source Voltage, VDS –V
RDS(on) -- V
GS
IT00933
Ta=25°C
D1 S1 S1 G1
I
-- V
10
VDS=10V
9 8
7
–A
D
6
5
4
3
Drain Current, I
2
1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 2.01.4 1.6 1.8
D
GS
Ta=75°C
25°C
--25°C
Gate-to-Source Voltage, VGS –V
50
RDS(on) -- Ta
IT00934
50
m
40
(on)
DS
30
ID=2A
20
10
Static Drain-to-Source
On-State Resistance, R
0
0246
5A
Gate-to-Source Voltage, VGS –V
81210
IT00935
m
40
– (on)
30
DS
20
10
Static Drain-to-Source
On-State Resistance, R
0
- -50
--25 0 25 50 75 100 125 150
=2.5V
GS
=2A, V
I
D
=4.0V
GS
=5A, V
I
D
Ambient Temperature, Ta – °C
IT00936
No.6383-2/4
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