SANYO FTD2019 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6383

FTD2019

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2019 Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,A5=

2)no(IDV,A2=
SD

SD
SD

Package Dimensions

unit:mm

2155A

[FTD2019]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

03V
01±V
5A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=4.03.1V

D

A5=2.1161S

D

V4=9152mΩ

SG

V5.2=3233mΩ

SG

zHM1=f,V01=0031Fp
zHM1=f,V01=082Fp
zHM1=f,V01=061Fp

21400TS (KOTO) TA-2503 No.6383–1/4

FTD2019

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5.2Cn

egrahC"relliM"niarD-ot-etaGdgQ 5Cn

egatloVdrawroFedoiDV

Switching Time Test Circuit Electrical Connection

VDD=15V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

ID=5A

RL=3Ω

D

V

OUT

)no(tiucriCtseTdeificepSeeS81sn

d

r

)ffo(tiucriCtseTdeificepSeeS031sn

d

f

V

I

DS

S

V,V01=

SD

SG

V,A5=

0=8.02.1V

SG

tiucriCtseTdeificepSeeS511sn

tiucriCtseTdeificepSeeS541sn

I,V01=

A5=

D

D2 S2 S2 G2

sgnitaR

nimpytxam

05Cn

tinU

P.G

10

3.5V

9

8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

60

4.0V

0

50Ω

2.5V

I

D

3.0V

S

-- V

FTD2019

DS

1.5V

2.0V

VGS=1.0V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

IT00933

Ta=25°C

D1 S1 S1 G1

I

-- V

10

VDS=10V

9
8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 2.01.4 1.6 1.8

D

GS

Ta=75°C

25°C

--25°C

Gate-to-Source Voltage, VGS –V

50

RDS(on) -- Ta

IT00934

50

mΩ
–

40

(on)

DS

30

ID=2A

20

10

Static Drain-to-Source

On-State Resistance, R

0

0246

5A

Gate-to-Source Voltage, VGS –V

81210

IT00935

mΩ

40

–
(on)

30

DS

20

10

Static Drain-to-Source

On-State Resistance, R

0

- -50

--25 0 25 50 75 100 125 150

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=5A, V

I

D

Ambient Temperature, Ta – °C

IT00936

No.6383-2/4