SANYO FTD2017 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6361

FTD2017

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2017 Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,A5=

2)no(IDV,A2=
SD

SD
SD

Package Dimensions

unit:mm

2155A

[FTD2017]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

02V
01±V
5A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=4.03.1V

D

A5=2.1161S

D

V4=7132mΩ

SG

V5.2=0292mΩ

SG

zHM1=f,V01=0051Fp
zHM1=f,V01=053Fp
zHM1=f,V01=032Fp

21400TS (KOTO) TA-2502 No.6361–1/4

FTD2017

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 4Cn

egrahC"relliM"niarD-ot-etaGdgQ 8Cn

egatloVdrawroFedoiDV

Switching Time Test Circuit Electrical Connection

VDD=10V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

ID=5A

RL=2Ω

D

V

OUT

)no(tiucriCtseTdeificepSeeS91sn

d

r

)ffo(tiucriCtseTdeificepSeeS09sn

d

f

V

I

DS

S

V,V01=

SD

SG

V,A5=

0=8.02.1V

SG

tiucriCtseTdeificepSeeS091sn

tiucriCtseTdeificepSeeS061sn

I,V01=

A5=

D

D2 S2 S2 G2

sgnitaR

nimpytxam

24Cn

tinU

P.G

10

3.5V

9

8

4.0V

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0

60

50Ω

I

D

S

-- V

FTD2017

DS

3.0V

2.5V

2.0V

VGS=1.0V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

1.5V

IT00922

Ta=25°C

D1 S1 S1 G1

I

-- V

10

VDS=10V

9
8

7

–A

D

6

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.0 1.2 2.01.4 1.6 1.8

D

GS

Ta=75

°C

C

°

--25

Gate-to-Source Voltage, VGS –V

50

RDS(on) -- Ta

25°C

IT00923

50

mΩ
–

40

(on)

DS

30

ID=2A

5A

20

10

Static Drain-to-Source

On-State Resistance, R

0

0246

Gate-to-Source Voltage, VGS –V

81210

IT00924

mΩ

40

–
(on)

30

DS

20

10

Static Drain-to-Source

On-State Resistance, R

0

--25 0 25 50 75 100 125 150

- -50

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=5A, V

I

D

Ambient Temperature, Ta – °C

IT00925

No.6361-2/4