SANYO FTD2015 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6393

FTD2015

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 4V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2015 Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,A4=

2)no(IDV,A4=
SD

SD
SD

Package Dimensions

unit:mm

2155A

[FTD2015]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

03V
02±V
4A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=03V

SG

V,V03=

0=0.1Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A4=5.45.6S

D

V01=7394mΩ

SG

V4=2537mΩ

SG

zHM1=f,V01=055Fp
zHM1=f,V01=031Fp
zHM1=f,V01=08Fp

30100TS (KOTO) TA-2499 No.6393–1/4

FTD2015

D2 S2 S2 G2

D1 S1 S1 G1

(Top view)

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5.1Cn

egrahC"relliM"niarD-ot-etaGdgQ 2.2Cn

egatloVdrawroFedoiDV

Switching Time Test Circuit Electrical Connection

VDD=15V

ID=4A
RL=3.75Ω

D

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

G

)no(tiucriCtseTdeificepSeeS01sn

d

r

)ffo(tiucriCtseTdeificepSeeS55sn

d

f

V

DS

OUT

V

I

S

V,V01=

SD

SG

V,A4=

0=18.02.1V

SG

tiucriCtseTdeificepSeeS56sn

tiucriCtseTdeificepSeeS05sn

I,V01=

A4=

D

sgnitaR

nimpytxam

31Cn

tinU

P.G

9

8

7

6

–A

D

5

4

3

Drain Current, I

2

1

0

0

150

50Ω

I

-- V

D

FTD2015

S

DS

4.0V

10.0V

6.0V

3.5V

3.0V

VGS=2.5V

0.2

0.3

0.5 0.70.1 0.4 0.6 0.8 0.9 1.0

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

IT01282

Ta=25°C

I

-- V

D

Ta=75

GS

°

C

--25°C

25°C

10

9

8

7

–A

D

6

5

4
3

Drain Current, I

2

1
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Gate-to-Source Voltage, VGS –V

100

RDS(on) -- Ta

VDS=10V

IT01283

mΩ
–

(on)

100

4A

DS

I

=2A

D

50

Static Drain-to-Source

On-State Resistance, R

0

0246

Gate-to-Source Voltage, VGS –V

10 12 14 16 18 20

8

IT01284

mΩ

80

–
(on)

60

DS

40

20

Static Drain-to-Source

On-State Resistance, R

0

--40 --20 0 20 40 60 80 100

--60

=4V

GS

=4A, V

I

D

=10V

GS

=4A, V

I

D

Ambient Temperature, Ta – °C

120

IT01285

No.6393-2/4

160140