SANYO FTD2014 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6267

FTD2014

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2014 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A4=

)no(SD

2IDV,A2=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2155A

[FTD2014]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

02V
01±V
4A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=02V

SG

V,V02=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A4=701S

D

V4=2324mΩ

SG

V5.2=2495mΩ

SG

zHM1=f,V01=007Fp
zHM1=f,V01=002Fp
zHM1=f,V01=051Fp

21400TS (KOTO) TA-2166 No.6267–1/4

FTD2014

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 4.1Cn

egrahC"relliM"niarD-ot-etaGdgQ 2.3Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01=

SD

SG

V,A4=

0=58.02.1V

SG

Switching Time Test Circuit Electrical Connection

VDD=10V

V

IN
4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=4A
RL=2.5Ω

V

OUT

tiucriCtseTdeificepSeeS41sn
tiucriCtseTdeificepSeeS031sn
tiucriCtseTdeificepSeeS38sn
tiucriCtseTdeificepSeeS011sn

I,V01=

A4=

D

D2 G2S2 S2

sgnitaR

nimpytxam

42Cn

tinU

P.G

50Ω

12

4.0V

10

2.5V

3.5V

ID -- V

2.0V

FTD2014

S

DS

Ta=25°C

3.0V

8

–A

D

6

1.5V

4

Drain Current, I

2

VGS=1.0V

0

02.0

90

80

mΩ

70

–

60

DS(on)

50

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0.5 1.0 1.5 2.5 3.0

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

4A

ID=2A

2406108

Gate-to-Source Voltage, VGS –V

IT00425

Ta=25°C

IT00427

D1 G1

S1 S1

12

VDS=10V

10

8

–A

D

6

4

Drain Current, I

2

0

0.2 0.6 1.61.00.8

0

0.4 1.41.2 1.8 2.0

Gate-to-Source Voltage, VGS –V

60

50

mΩ
–

40

DS(on)

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--2 5--5 0

(Top view)

I

-- V

D

25°C

GS

Ta=75°C

--25°C

RDS(on) -- Ta

=2.5V

GS

=2A, V

I

D

=4.0V

GS

=4A, V

I

D

0

Ambient Temperature, Ta – °C

IT00426

150125100755025

IT00428

No.6267-2/4