SANYO FTD2013 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6080A
FTD2013
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2013 Continued on next page.
SSD SSG
D
R R
WP elcycytud,sµ01 %102A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD SSG
)ffo(SG
1IDV,A5.4=
)no(SD
2IDV,A2=
)no(SD
SD
V
SG
V
SD
SD SD SD
Package Dimensions
unit:mm
2155A
[FTD2013]
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
03V 01±V
5.4A
sgnitaR
8.0W
3.1W
˚C ˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=03V
SG
V,V03=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=5.03.1V
D
A5.4=701S
D
V4=5253m
SG
V5.2=4384m
SG
zHM1=f,V01=0001Fp zHM1=f,V01=581Fp zHM1=f,V01=531Fp
52200TS (KOTO) TA-2589 No.6080–1/4
FTD2013
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 5.1Cn
egrahC"relliM"niarD-ot-etaGdgQ 6Cn
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
V
I
DS
S
V,V01=
SD
SG
V,A5.4=
0=28.02.1V
SG
Switching Time Test Circuit Electrical Connection
V
IN
4V 0V
PW=10µs D.C.1%
V
IN
G
VDD=15V
D
ID=4.5A RL=3.3
V
OUT
tiucriCtseTdeificepSeeS61sn tiucriCtseTdeificepSeeS001sn tiucriCtseTdeificepSeeS041sn tiucriCtseTdeificepSeeS011sn
I,V01=
A5.4=
D
D2 S2 S2 G2
sgnitaR
nimpytxam
23Cn
tinU
P.G
50
10
9
4.0V
8
7
–A
6
D
5
4
3
Drain Current, I
2
1 0
0
60
50
m
I
=2A
D
40
DS(on)
30
FTD2013
S
ID-
V
DS
3.5V
3.0V
2.5V
2.0V
1.5V
=1.0V
V
0.5 1.0 1.5 2.0 2.5 3.0
GS
Drain-to-Source Voltage, VDS –V
R
DS(on)
-
V
GS
Ta=25°C
=4.5A
I
D
D1 S1 S1 G1
10
VDS=10V
9
8
7
–A
6
D
5
4
3
Drain Current, I
2
1 0
0 0.2 0.60.4 0.8 1.0 1.2 2.01.6 1.81.4
ID-
Gate-to-Source Voltage, VGS –V
R
60
50
m
40
DS(on)
30
DS(on)
=2A,V
I
D
=4.5A,V
I
D
V
GS
GS
25°C
-
=2.5V
GS
75°C
°C
Ta=-25
Ta
=4V
20
10
Static Drain-to-Source
On-State Resistance, R
0
2 4 6 8 10 12 -50
0
Gate-to-Source Voltage, VGS –V
20
10
Static Drain-to-Source
On-State Resistance, R
0
-25 0 25 50 75 100 125 150
Ambient Temperature, Ta – °C
No.6080-2/4
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