SANYO FTD2013 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6080A

FTD2013

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

6.4

3.0

0.425

0.65

4.5 0.95

(0.95)

0.5

0.125

85

14

0.25

1.0

0.1

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

· Composite type, facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

noitapissiDlatoTP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : D2013 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %102A

PD

Mounted on a ceramic board (1000mm2×0.8mm) 1unit

D

Mounted on a ceramic board (1000mm

T

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A5.4=

)no(SD

2IDV,A2=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2155A

[FTD2013]

1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8

03V
01±V

5.4A

sgnitaR

8.0W

3.1W

˚C
˚C

tinU

2

×0.8mm)

nimpytxam

V,Am1=

0=03V

SG

V,V03=

0=1Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=5.03.1V

D

A5.4=701S

D

V4=5253mΩ

SG

V5.2=4384mΩ

SG

zHM1=f,V01=0001Fp
zHM1=f,V01=581Fp
zHM1=f,V01=531Fp

52200TS (KOTO) TA-2589 No.6080–1/4

FTD2013

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 5.1Cn

egrahC"relliM"niarD-ot-etaGdgQ 6Cn

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

V

I

DS

S

V,V01=

SD

SG

V,A5.4=

0=28.02.1V

SG

Switching Time Test Circuit Electrical Connection

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

VDD=15V

D

ID=4.5A
RL=3.3Ω

V

OUT

tiucriCtseTdeificepSeeS61sn
tiucriCtseTdeificepSeeS001sn
tiucriCtseTdeificepSeeS041sn
tiucriCtseTdeificepSeeS011sn

I,V01=

A5.4=

D

D2 S2 S2 G2

sgnitaR

nimpytxam

23Cn

tinU

P.G

50Ω

10

9

4.0V

8

7

–A

6

D

5

4

3

Drain Current, I

2

1
0

0

60

50

mΩ
–

I

=2A

D

40

DS(on)

30

FTD2013

S

ID-

V

DS

3.5V

3.0V

2.5V

2.0V

1.5V

=1.0V

V

0.5 1.0 1.5 2.0 2.5 3.0

GS

Drain-to-Source Voltage, VDS –V

R

DS(on)

-

V

GS

Ta=25°C

=4.5A

I

D

D1 S1 S1 G1

10

VDS=10V

9

8

7

–A

6

D

5

4

3

Drain Current, I

2

1
0

0 0.2 0.60.4 0.8 1.0 1.2 2.01.6 1.81.4

ID-

Gate-to-Source Voltage, VGS –V

R

60

50

mΩ
–

40

DS(on)

30

DS(on)

=2A,V

I

D

=4.5A,V

I

D

V

GS

GS

25°C

-

=2.5V

GS

75°C

°C

Ta=-25

Ta

=4V

20

10

Static Drain-to-Source

On-State Resistance, R

0

2 4 6 8 10 12 -50

0

Gate-to-Source Voltage, VGS –V

20

10

Static Drain-to-Source

On-State Resistance, R

0

-25 0 25 50 75 100 125 150

Ambient Temperature, Ta – °C

No.6080-2/4