SANYO FTD2011 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6072A
FTD2011
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 2.5V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
Marking : D2011 Continued on next page.
SSD
SSG
D
R
R
WP ≤ elcycytud,sµ01 ≤ %102A
PD
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
D
Mounted on a ceramic board (1000mm
T
I
SSD)RB(
D
V
SSD
SSG
)ffo(SG
1IDV,A4=
)no(SD
2IDV,A2=
)no(SD
SD
V
SG
V
SD
SD
SD
SD
Package Dimensions
unit:mm
2155A
[FTD2011]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
02V
01±V
5A
sgnitaR
8.0W
3.1W
˚C
˚C
tinU
2
×0.8mm)
nimpytxam
V,Am1=
0=02V
SG
V,V02=
0=1Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=5.03.1V
D
A5=821S
D
V4=2282mΩ
SG
V5.2=0304mΩ
SG
zHM1=f,V01=009Fp
zHM1=f,V01=062Fp
zHM1=f,V01=002Fp
52200TS (KOTO) TA-2077 No.6072–1/4
FTD2011
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 5.1Cn
egrahC"relliM"niarD-ot-etaGdgQ 6Cn
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
V
I
DS
S
V,V01=
SD
SG
V,A5=
0=28.02.1V
SG
Switching Time Test Circuit Electrical Connection
D
VDD=10V
ID=4A
RL=2.5Ω
V
OUT
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
G
tiucriCtseTdeificepSeeS51sn
tiucriCtseTdeificepSeeS051sn
tiucriCtseTdeificepSeeS001sn
tiucriCtseTdeificepSeeS051sn
I,V01=
A4=
D
D2 S2 S2 G2
sgnitaR
nimpytxam
23Cn
tinU
P.G
10
9
8
7
–A
6
D
5
4
3
Drain Current, I
2
1
0
5
3
|–S
2
fs
10
7
5
50Ω
S
FTD2011
ID-
A11947
V
DS
3.5V
3.0V
4.0V
2.5V
2.0V
0.5 1.0 1.5 2.0 2.5 3.0
0
Drain-to-Source Voltage, VDS –V
|yfs |-I
D
°C
Ta=-25
75°C
1.5V
VGS=1.0V
VDS=10V
25°C
D1 S1 S1 G1
A11948
10
VDS=10V
9
8
7
–A
6
D
5
4
3
Drain Current, I
2
1
0
0 0.2 0.4 0.80.6 1.0 1.2 2.01.6 1.81.4
ID-
Gate-to-Source Voltage, VGS –V
R
70
60
mΩ
–
50
DS(on)
40
30
I
=2A
D
DS(on)
I
=5A
D
V
-
GS
°C
75°C
Ta=-25
25°C
V
GS
Ta=25°C
3
2
Forward Transfer Admitance, | y
1.0
23 57 2 2357
1.00.1 10
Drain Current, ID–A
20
10
Static Drain-to-Source
On-State Resistance, R
0
0
24681012
Gate-to-Source Voltage, VGS –V
No.6072-2/4
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