SANYO FTD2007 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6430
FTD2007
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
6.4
3.0
0.425
0.65
4.5 0.95
(0.95)
0.5
0.125
85
14
0.25
1.0
0.1
Features
· Low ON resistance.
· 4V drive.
· Mounting height 1.1mm.
· Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)eslup(tnerruCniarDI
noitapissiDrewoPelbawollAP
noitapissiDlatoTP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
SSD
SSG
D
PD
D
T
Package Dimensions
unit:mm
2155A
[FTD2007]
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO : TSSOP8
001V
02±V
8.0A
WP ≤ elcycytud,sµ01 ≤ %12.3A
Mounted on a ceramic board (1000mm2×0.8mm) 1unit
Mounted on a ceramic board (1000mm
2
×0.8mm)
6.0W
8.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
R
SG
SD
SD
SD
SSD)RB(
SSD
SSG
)ffo(VSDI,V01=
1)no(IDV,Am004=
2)no(IDV,Am004=
3)no(IDV,Am004=
I
V,Am1=
D
V
SD
V
SG
0=001V
SG
V,V001=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=8.00.2V
D
Am004=0.15.1S
D
V01=6.08.0
SG
V4=56.059.0
SG
V3=7.00.1
SG
nimpytxam
Marking : D2007 Continued on next page.
30300TS (KOTO) TA-2501 No.6430–1/4
sgnitaR
tinU
Ω
Ω
Ω
FTD2007
D2S2 S2 G2
D1S1 S1 G1
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 6.0Cn
egrahC"relliM"niarD-ot-etaGdgQ 41.1Cn
egatloVdrawroFedoiDV
d
r
d
f
DS
SD
SD
SD
)no(tiucriCtseTdeificepSeeS8sn
)ffo(tiucriCtseTdeificepSeeS04sn
V
SD
I
S
Switching Time Test Circuit Electrical Connection
VDD=50V
V
IN
10V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=400mA
RL=125Ω
V
OUT
zHM1=f,V05=051Fp
zHM1=f,V05=03Fp
zHM1=f,V05=5Fp
tiucriCtseTdeificepSeeS4sn
tiucriCtseTdeificepSeeS52sn
V,V01=
V,Am008=
I,V01=
SG
0=57.02.1V
SG
Am008=
D
sgnitaR
nimpytxam
2.5Cn
tinU
P.G
1.6
50Ω
I
D
8.0V
1.4
1.2
–A
1.0
D
0.8
0.6
Drain Current, I
0.4
0.2
0
0
0.4
6.0V
10.0V
0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8
Drain-to-Source Voltage, VDS –V
1.4
1.2
Ω
–
1.0
RDS(on) -- V
(on)
DS
0.8
0.6
0.4
0.2
Static Drain-to-Source
On-State Resistance, R
0
01234 56
Gate-to-Source Voltage, VGS –V
S
-- V
FTD2007
DS
3.0V
4.0V
GS
2.5V
2.0V
VGS=1.5V
IT01119
Ta=25°C
ID=400mA
78910
IT01121
I
-- V
2.0
VDS=10V
1.8
1.6
1.4
–A
1.2
D
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
D
25°C
GS
Ta=75°C
--25°C
Gate-to-Source Voltage, VGS –V
1.6
1.4
Ω
1.2
–
(on)
1.0
DS
0.8
0.6
0.4
0.2
Static Drain-to-Source
On-State Resistance, R
0
--40 --20 0 20 40 60 80 100 120 140 160
- -60
RDS(on) -- Ta
=3V
GS
=400mA, V
I
D
=400mA, V
I
D
=400mA, V
I
D
GS
=4V
GS
=10V
Ambient Temperature, Ta – °C
IT01120
IT01122
No.6430-2/4
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